@article{oai:nagoya.repo.nii.ac.jp:00005433,
 author = {Takizawa, K. and Sasaki, K. and Kadota, K.},
 issue = {11},
 journal = {Journal of Applied Physics},
 month = {Dec},
 note = {Spatial and temporal variations of C_3 density in high-density octafluorocyclobutane (c-C_4F_8) plasmas were examined using laser-induced fluorescence spectroscopy. The C_3 density varied slowly for a long time after the initiation of discharge, suggesting the importance of surface chemistry for the formation of C_3 . Hollow-shaped spatial distributions (the C_3 density adjacent to the chamber wall was higher than that in the plasma column) were observed in the C_3 density. This result indicates that C_3 radicals are produced from fluorocarbon film on the chamber wall and are lost in the plasma column due to electron impact processes. The surface production of C_3 was also observed in the afterglow for 1 ms after the termination of rf power. The decay time constant of the C_3 density in the late (>1 ms) afterglow, where the surface production of C_3 stopped, was almost independent of discharge parameters, suggesting that the loss of C_3 due to gas-phase reactions is negligible.},
 pages = {6201--6206},
 title = {Characteristics of C_3 radicals in high-density C_4F_8 plasmas studied by laser-induced fluorescence spectroscopy},
 volume = {88},
 year = {2000}
}