@article{oai:nagoya.repo.nii.ac.jp:00005436,
 author = {Ohta, Hiroyuki and Hori, Masaru and Goto, Toshio},
 issue = {4},
 journal = {Journal of Applied Physics},
 month = {Aug},
 note = {Ultrathin fluorinated silicon nitride (SiN_x) films of 4 nm in thickness were formed on a Si substrate at 350 ℃ in the downflow of electron cyclotron resonance plasma-enhanced chemical vapor deposition employing ammonia and tetrafluorosilane (NH_3 /SiF_4) gases. Ultrathin fluorinated SiN_x film was evaluated for use as a gate dielectric film. The observed properties indicated an extremely low leakage current, one order of magnitude lower than thermal SiO_2 of identical equivalent oxide thickness, as well as an excellent hysteresis loop (20 mV) and interface trap density (D_it=4 *10^11 cm^-2) in the capacitance–voltage characteristics. The film structures and the surface reactions for the fluorinated SiN_x film formation were examined via in situ x-ray photoelectron spectroscopy. in situ Fourier-transform infrared reflection absorption spectroscopy, in situ atomic force microscopy, and thermal desorption mass spectroscopy. The control of the fluorine concentration in the SiN_x films was found to be a key factor in the formation of fluorinated SiN_x films of high quality at low temperatures. Fluorinated SiN_x is the effective material for application in ultrathin gate dielectric film in ultralarge-scale integrated circuits.},
 pages = {1955--1961},
 title = {Ultrathin fluorinated silicon nitride gate dielectric films formed by remote plasma enhanced chemical vapor deposition employing NH_3 and SiF_4},
 volume = {90},
 year = {2001}
}