{"created":"2021-03-01T06:11:59.862328+00:00","id":5436,"links":{},"metadata":{"_buckets":{"deposit":"c234b209-fd5a-4953-9553-37038090356c"},"_deposit":{"id":"5436","owners":[],"pid":{"revision_id":0,"type":"depid","value":"5436"},"status":"published"},"_oai":{"id":"oai:nagoya.repo.nii.ac.jp:00005436","sets":["320:321:322"]},"author_link":["13959","13960","13961"],"item_10_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2001-08-15","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"4","bibliographicPageEnd":"1961","bibliographicPageStart":"1955","bibliographicVolumeNumber":"90","bibliographic_titles":[{"bibliographic_title":"Journal of Applied Physics","bibliographic_titleLang":"en"}]}]},"item_10_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Ultrathin fluorinated silicon nitride (SiN_x) films of 4 nm in thickness were formed on a Si substrate at 350 ℃ in the downflow of electron cyclotron resonance plasma-enhanced chemical vapor deposition employing ammonia and tetrafluorosilane (NH_3 /SiF_4) gases. Ultrathin fluorinated SiN_x film was evaluated for use as a gate dielectric film. The observed properties indicated an extremely low leakage current, one order of magnitude lower than thermal SiO_2 of identical equivalent oxide thickness, as well as an excellent hysteresis loop (20 mV) and interface trap density (D_it=4 *10^11 cm^-2) in the capacitance–voltage characteristics. The film structures and the surface reactions for the fluorinated SiN_x film formation were examined via in situ x-ray photoelectron spectroscopy. in situ Fourier-transform infrared reflection absorption spectroscopy, in situ atomic force microscopy, and thermal desorption mass spectroscopy. The control of the fluorine concentration in the SiN_x films was found to be a key factor in the formation of fluorinated SiN_x films of high quality at low temperatures. Fluorinated SiN_x is the effective material for application in ultrathin gate dielectric film in ultralarge-scale integrated circuits.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10_identifier_60":{"attribute_name":"URI","attribute_value_mlt":[{"subitem_identifier_type":"HDL","subitem_identifier_uri":"http://hdl.handle.net/2237/7040"}]},"item_10_publisher_32":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"American Institute of Physics","subitem_publisher_language":"en"}]},"item_10_relation_11":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.1063/1.1381556","subitem_relation_type_select":"DOI"}}]},"item_10_rights_12":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"Copyright (2001) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.","subitem_rights_language":"en"}]},"item_10_select_15":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_select_item":"publisher"}]},"item_10_source_id_7":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0021-8979","subitem_source_identifier_type":"PISSN"}]},"item_10_text_14":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_text_value":"application/pdf"}]},"item_1615787544753":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"open access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_abf2"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Ohta, Hiroyuki","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"13959","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Hori, Masaru","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"13960","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Goto, Toshio","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"13961","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2018-02-19"}],"displaytype":"detail","filename":"JApplPhys_90_1955.pdf","filesize":[{"value":"120.7 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"JApplPhys_90_1955.pdf","objectType":"fulltext","url":"https://nagoya.repo.nii.ac.jp/record/5436/files/JApplPhys_90_1955.pdf"},"version_id":"f67f5f07-8e34-473a-8a03-92245d62c433"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Ultrathin fluorinated silicon nitride gate dielectric films formed by remote plasma enhanced chemical vapor deposition employing NH_3 and SiF_4","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Ultrathin fluorinated silicon nitride gate dielectric films formed by remote plasma enhanced chemical vapor deposition employing NH_3 and SiF_4","subitem_title_language":"en"}]},"item_type_id":"10","owner":"1","path":["322"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2006-10-24"},"publish_date":"2006-10-24","publish_status":"0","recid":"5436","relation_version_is_last":true,"title":["Ultrathin fluorinated silicon nitride gate dielectric films formed by remote plasma enhanced chemical vapor deposition employing NH_3 and SiF_4"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-01-16T03:50:06.263637+00:00"}