@article{oai:nagoya.repo.nii.ac.jp:00005447,
 author = {Nishitani, T. and Nakanishi, T. and Yamamoto, M. and Okumi, S. and Furuta, F. and Miyamoto, M. and Kuwahara, M. and Yamamoto, N. and Naniwa, K. and Watanabe, O. and Takeda, Y. and Kobayakawa, H. and Takashima, Y. and Horinaka, H. and Matsuyama, T. and Togawa, K. and Saka, T. and Tawada, M. and Omori, T. and Kurihara, Y. and Yoshioka, M. and Kato, K. and Baba, T.},
 issue = {9},
 journal = {Journal of Applied Physics},
 month = {May},
 note = {GaAs–GaAsP and InGaAs–AlGaAs strained-layer superlattice photocathodes are presented as emission sources for highly polarized electron beams. The GaAs–GaAsP cathode achieved a maximum polarization of 92(±6)% with a quantum efficiency of 0.5%, while the InGaAs–AlGaAs cathode provides a higher quantum efficiency (0.7%) but a lower polarization [77(±5)%]. Criteria for achieving high polarization using superlattice photocathodes are discussed based on experimental spin-resolved quantum efficiency spectra.},
 pages = {094907--094907},
 title = {Highly polarized electrons from GaAs–GaAsP and InGaAs–AlGaAs strained-layer superlattice photocathodes},
 volume = {97},
 year = {2005}
}