@article{oai:nagoya.repo.nii.ac.jp:00005472,
 author = {Fujita, Kazushi and Ito, Masafumi and Hori, Masaru and Goto, Toshio},
 issue = {3},
 journal = {Journal of Vacuum Science & Technology B},
 month = {May},
 note = {A novel gas source replacing fluorocarbon feed gases has been developed for preventing global warming. The novel gas source was designed to generate fluorocarbon species from polytetrafluoroethylene by CO_2 laser ablation. The species generated from the gas source were introduced into an electron cyclotron resonance (ECR) plasma employing Ar gases. To characterize the gas source, CF_x (x=1–3) radical densities with and without plasmas were measured by infrared diode laser absorption spectroscopy. In the ECR plasma employing the novel gas source, CF_x (x =1–3) radical densities were estimated to be of the order of 10^12–10^13 cm^-3. The gas source has been applied to the selective etching of SiO_2 to Si using the ECR plasma. As a result, the etching characteristics by ECR plasma employing the novel gas source were equivalent to those by a conventional ECR plasma employing C_4F_8 gas. Therefore, this novel gas source is applicable to etching processes for preventing global warming.},
 pages = {957--960},
 title = {Novel process for SiO_2/Si selective etching using a novel gas source for preventing global warming},
 volume = {17},
 year = {1999}
}