{"created":"2021-03-01T06:12:02.226166+00:00","id":5473,"links":{},"metadata":{"_buckets":{"deposit":"8dbaec25-5d17-48b8-9d49-e89c4eae4f01"},"_deposit":{"id":"5473","owners":[],"pid":{"revision_id":0,"type":"depid","value":"5473"},"status":"published"},"_oai":{"id":"oai:nagoya.repo.nii.ac.jp:00005473","sets":["320:321:322"]},"author_link":["14115","14116","14117","14118","14119"],"item_10_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"1999-05","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"3","bibliographicPageEnd":"956","bibliographicPageStart":"949","bibliographicVolumeNumber":"17","bibliographic_titles":[{"bibliographic_title":"Journal of Vacuum Science & Technology B","bibliographic_titleLang":"en"}]}]},"item_10_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"The development of a new fabrication technique of Teflon microparts using synchrotron radiation (SR) irradiation, the SR ablation process, was described. The anisotropic micromachining and thin film formation of polytetrafluoroethylene, fluorinated ethylene propylene, and perfluoroalkoxy were demonstrated using the SR ablation process. The anisotropic micromachining of Teflon with hole pattern of 2 μm diam was successfully performed, and the micromachining of Teflon with a high aspect ratio of 50 was achieved. Moreover, Teflon films with flat surface were formed at a high rate by the SR ablation of Teflon at the substrate temperature above 200 ℃.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10_identifier_60":{"attribute_name":"URI","attribute_value_mlt":[{"subitem_identifier_type":"HDL","subitem_identifier_uri":"http://hdl.handle.net/2237/7078"}]},"item_10_publisher_32":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"American Institute of Physics","subitem_publisher_language":"en"}]},"item_10_relation_11":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.1116/1.590675","subitem_relation_type_select":"DOI"}}]},"item_10_rights_12":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"Copyright (1999) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.","subitem_rights_language":"en"}]},"item_10_select_15":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_select_item":"publisher"}]},"item_10_source_id_7":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"1071-1023","subitem_source_identifier_type":"PISSN"}]},"item_10_text_14":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_text_value":"application/pdf"}]},"item_1615787544753":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"open access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_abf2"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Inayoshi, Muneto","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"14115","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Ito, Masafumi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"14116","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Hori, Masaru","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"14117","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Goto, Toshio","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"14118","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Hiramatsu, Mineo","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"14119","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2018-02-19"}],"displaytype":"detail","filename":"JVB000949.pdf","filesize":[{"value":"855.8 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"JVB000949.pdf","objectType":"fulltext","url":"https://nagoya.repo.nii.ac.jp/record/5473/files/JVB000949.pdf"},"version_id":"d4b0f94e-2372-4c66-be4e-964f2f467c1f"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Formation and micromachining of Teflon (fluorocarbon polymer) film by a completely dry process using synchrotron radiation","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Formation and micromachining of Teflon (fluorocarbon polymer) film by a completely dry process using synchrotron radiation","subitem_title_language":"en"}]},"item_type_id":"10","owner":"1","path":["322"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2006-10-26"},"publish_date":"2006-10-26","publish_status":"0","recid":"5473","relation_version_is_last":true,"title":["Formation and micromachining of Teflon (fluorocarbon polymer) film by a completely dry process using synchrotron radiation"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-01-16T03:50:07.834499+00:00"}