{"_buckets": {"deposit": "c7c771f0-6627-4dab-85fc-d3722c41fd84"}, "_deposit": {"id": "5474", "owners": [], "pid": {"revision_id": 0, "type": "depid", "value": "5474"}, "status": "published"}, "_oai": {"id": "oai:nagoya.repo.nii.ac.jp:00005474"}, "item_10_biblio_info_6": {"attribute_name": "\u66f8\u8a8c\u60c5\u5831", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "1999-05", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "3", "bibliographicPageEnd": "1100", "bibliographicPageStart": "1098", "bibliographicVolumeNumber": "17", "bibliographic_titles": [{"bibliographic_title": "Journal of Vacuum Science \u0026 Technology B"}]}]}, "item_10_description_4": {"attribute_name": "\u6284\u9332", "attribute_value_mlt": [{"subitem_description": "We have successfully improved the surface roughness and crystalline fraction of polycrystalline silicon (poly-Si) films formed on quartz substrates at 300 \u2103 by controlling its initial growth. Seed layers were formed by eliminating charged species incident on the substrate during the initial growth in electron cyclotron resonance silane and hydrogen plasma-enhanced chemical vapor deposition and poly-Si films were subsequently formed on the seed layers with charged species. As a result, control of ion bombardment on the initial growth was found to be a key factor for forming poly-Si films with smooth surfaces and high crystallinity at low temperatures.", "subitem_description_type": "Abstract"}]}, "item_10_identifier_60": {"attribute_name": "URI", "attribute_value_mlt": [{"subitem_identifier_type": "HDL", "subitem_identifier_uri": "http://hdl.handle.net/2237/7079"}]}, "item_10_publisher_32": {"attribute_name": "\u51fa\u7248\u8005", "attribute_value_mlt": [{"subitem_publisher": "American Institute of Physics"}]}, "item_10_relation_11": {"attribute_name": "DOI", "attribute_value_mlt": [{"subitem_relation_type_id": {"subitem_relation_type_id_text": "http://dx.doi.org/10.1116/1.590702", "subitem_relation_type_select": "DOI"}}]}, "item_10_rights_12": {"attribute_name": "\u6a29\u5229", "attribute_value_mlt": [{"subitem_rights": "Copyright (1999) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics."}]}, "item_10_select_15": {"attribute_name": "\u8457\u8005\u7248\u30d5\u30e9\u30b0", "attribute_value_mlt": [{"subitem_select_item": "publisher"}]}, "item_10_source_id_7": {"attribute_name": "ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "1071-1023", "subitem_source_identifier_type": "ISSN"}]}, "item_10_text_14": {"attribute_name": "\u30d5\u30a9\u30fc\u30de\u30c3\u30c8", "attribute_value_mlt": [{"subitem_text_value": "application/pdf"}]}, "item_creator": {"attribute_name": "\u8457\u8005", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Murata, Kazuya"}], "nameIdentifiers": [{"nameIdentifier": "14120", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Ito, Masafumi"}], "nameIdentifiers": [{"nameIdentifier": "14121", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Hori, Masaru"}], "nameIdentifiers": [{"nameIdentifier": "14122", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Goto, Toshio"}], "nameIdentifiers": [{"nameIdentifier": "14123", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "\u30d5\u30a1\u30a4\u30eb\u60c5\u5831", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2018-02-19"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "JVB001098.pdf", "filesize": [{"value": "127.9 kB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_free", "mimetype": "application/pdf", "size": 127900.0, "url": {"label": "JVB001098.pdf", "url": "https://nagoya.repo.nii.ac.jp/record/5474/files/JVB001098.pdf"}, "version_id": "c2ec63f9-8354-4811-9da9-d2421f204a78"}]}, "item_language": {"attribute_name": "\u8a00\u8a9e", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "\u8cc7\u6e90\u30bf\u30a4\u30d7", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Control of seed layer for a low temperature formation of polycrystalline silicon with high crystallinity and a smooth surface", "item_titles": {"attribute_name": "\u30bf\u30a4\u30c8\u30eb", "attribute_value_mlt": [{"subitem_title": "Control of seed layer for a low temperature formation of polycrystalline silicon with high crystallinity and a smooth surface"}]}, "item_type_id": "10", "owner": "1", "path": ["320/321/322"], "permalink_uri": "http://hdl.handle.net/2237/7079", "pubdate": {"attribute_name": "\u516c\u958b\u65e5", "attribute_value": "2006-10-26"}, "publish_date": "2006-10-26", "publish_status": "0", "recid": "5474", "relation": {}, "relation_version_is_last": true, "title": ["Control of seed layer for a low temperature formation of polycrystalline silicon with high crystallinity and a smooth surface"], "weko_shared_id": 3}