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  1. B200 工学部/工学研究科
  2. B200a 雑誌掲載論文
  3. 学術雑誌

Control of seed layer for a low temperature formation of polycrystalline silicon with high crystallinity and a smooth surface

http://hdl.handle.net/2237/7079
5ac2bad9-c724-4e8b-8e33-4d0368dfbec9
名前 / ファイル ライセンス アクション
JVB001098.pdf JVB001098.pdf (127.9 kB)
Item type 学術雑誌論文 / Journal Article(1)
公開日 2006-10-26
タイトル
タイトル Control of seed layer for a low temperature formation of polycrystalline silicon with high crystallinity and a smooth surface
著者 Murata, Kazuya

× Murata, Kazuya

WEKO 14120

Murata, Kazuya

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Ito, Masafumi

× Ito, Masafumi

WEKO 14121

Ito, Masafumi

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Hori, Masaru

× Hori, Masaru

WEKO 14122

Hori, Masaru

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Goto, Toshio

× Goto, Toshio

WEKO 14123

Goto, Toshio

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権利
権利情報 Copyright (1999) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
抄録
内容記述 We have successfully improved the surface roughness and crystalline fraction of polycrystalline silicon (poly-Si) films formed on quartz substrates at 300 ℃ by controlling its initial growth. Seed layers were formed by eliminating charged species incident on the substrate during the initial growth in electron cyclotron resonance silane and hydrogen plasma-enhanced chemical vapor deposition and poly-Si films were subsequently formed on the seed layers with charged species. As a result, control of ion bombardment on the initial growth was found to be a key factor for forming poly-Si films with smooth surfaces and high crystallinity at low temperatures.
内容記述タイプ Abstract
出版者
出版者 American Institute of Physics
言語
言語 eng
資源タイプ
資源タイプresource http://purl.org/coar/resource_type/c_6501
タイプ journal article
DOI
関連識別子
識別子タイプ DOI
関連識別子 http://dx.doi.org/10.1116/1.590702
ISSN
収録物識別子タイプ ISSN
収録物識別子 1071-1023
書誌情報 Journal of Vacuum Science & Technology B

巻 17, 号 3, p. 1098-1100, 発行日 1999-05
フォーマット
application/pdf
著者版フラグ
値 publisher
URI
識別子 http://hdl.handle.net/2237/7079
識別子タイプ HDL
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