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Control of seed layer for a low temperature formation of polycrystalline silicon with high crystallinity and a smooth surface
http://hdl.handle.net/2237/7079
http://hdl.handle.net/2237/70795ac2bad9-c724-4e8b-8e33-4d0368dfbec9
名前 / ファイル | ライセンス | アクション |
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JVB001098.pdf (127.9 kB)
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2006-10-26 | |||||
タイトル | ||||||
タイトル | Control of seed layer for a low temperature formation of polycrystalline silicon with high crystallinity and a smooth surface | |||||
言語 | en | |||||
著者 |
Murata, Kazuya
× Murata, Kazuya× Ito, Masafumi× Hori, Masaru× Goto, Toshio |
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アクセス権 | ||||||
アクセス権 | open access | |||||
アクセス権URI | http://purl.org/coar/access_right/c_abf2 | |||||
権利 | ||||||
言語 | en | |||||
権利情報 | Copyright (1999) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. | |||||
抄録 | ||||||
内容記述 | We have successfully improved the surface roughness and crystalline fraction of polycrystalline silicon (poly-Si) films formed on quartz substrates at 300 ℃ by controlling its initial growth. Seed layers were formed by eliminating charged species incident on the substrate during the initial growth in electron cyclotron resonance silane and hydrogen plasma-enhanced chemical vapor deposition and poly-Si films were subsequently formed on the seed layers with charged species. As a result, control of ion bombardment on the initial growth was found to be a key factor for forming poly-Si films with smooth surfaces and high crystallinity at low temperatures. | |||||
言語 | en | |||||
内容記述タイプ | Abstract | |||||
出版者 | ||||||
言語 | en | |||||
出版者 | American Institute of Physics | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプresource | http://purl.org/coar/resource_type/c_6501 | |||||
タイプ | journal article | |||||
出版タイプ | ||||||
出版タイプ | VoR | |||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
DOI | ||||||
関連タイプ | isVersionOf | |||||
識別子タイプ | DOI | |||||
関連識別子 | https://doi.org/10.1116/1.590702 | |||||
ISSN | ||||||
収録物識別子タイプ | PISSN | |||||
収録物識別子 | 1071-1023 | |||||
書誌情報 |
en : Journal of Vacuum Science & Technology B 巻 17, 号 3, p. 1098-1100, 発行日 1999-05 |
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フォーマット | ||||||
application/pdf | ||||||
著者版フラグ | ||||||
値 | publisher | |||||
URI | ||||||
識別子 | http://hdl.handle.net/2237/7079 | |||||
識別子タイプ | HDL |