{"_buckets": {"deposit": "c7c771f0-6627-4dab-85fc-d3722c41fd84"}, "_deposit": {"id": "5474", "owners": [], "pid": {"revision_id": 0, "type": "depid", "value": "5474"}, "status": "published"}, "_oai": {"id": "oai:nagoya.repo.nii.ac.jp:00005474", "sets": ["322"]}, "author_link": ["14120", "14121", "14122", "14123"], "item_10_biblio_info_6": {"attribute_name": "書誌情報", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "1999-05", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "3", "bibliographicPageEnd": "1100", "bibliographicPageStart": "1098", "bibliographicVolumeNumber": "17", "bibliographic_titles": [{"bibliographic_title": "Journal of Vacuum Science \u0026 Technology B", "bibliographic_titleLang": "en"}]}]}, "item_10_description_4": {"attribute_name": "抄録", "attribute_value_mlt": [{"subitem_description": "We have successfully improved the surface roughness and crystalline fraction of polycrystalline silicon (poly-Si) films formed on quartz substrates at 300 ℃ by controlling its initial growth. Seed layers were formed by eliminating charged species incident on the substrate during the initial growth in electron cyclotron resonance silane and hydrogen plasma-enhanced chemical vapor deposition and poly-Si films were subsequently formed on the seed layers with charged species. As a result, control of ion bombardment on the initial growth was found to be a key factor for forming poly-Si films with smooth surfaces and high crystallinity at low temperatures.", "subitem_description_language": "en", "subitem_description_type": "Abstract"}]}, "item_10_identifier_60": {"attribute_name": "URI", "attribute_value_mlt": [{"subitem_identifier_type": "HDL", "subitem_identifier_uri": "http://hdl.handle.net/2237/7079"}]}, "item_10_publisher_32": {"attribute_name": "出版者", "attribute_value_mlt": [{"subitem_publisher": "American Institute of Physics", "subitem_publisher_language": "en"}]}, "item_10_relation_11": {"attribute_name": "DOI", "attribute_value_mlt": [{"subitem_relation_type": "isVersionOf", "subitem_relation_type_id": {"subitem_relation_type_id_text": "https://doi.org/10.1116/1.590702", "subitem_relation_type_select": "DOI"}}]}, "item_10_rights_12": {"attribute_name": "権利", "attribute_value_mlt": [{"subitem_rights": "Copyright (1999) American Institute of Physics. 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