@article{oai:nagoya.repo.nii.ac.jp:00005474, author = {Murata, Kazuya and Ito, Masafumi and Hori, Masaru and Goto, Toshio}, issue = {3}, journal = {Journal of Vacuum Science & Technology B}, month = {May}, note = {We have successfully improved the surface roughness and crystalline fraction of polycrystalline silicon (poly-Si) films formed on quartz substrates at 300 ℃ by controlling its initial growth. Seed layers were formed by eliminating charged species incident on the substrate during the initial growth in electron cyclotron resonance silane and hydrogen plasma-enhanced chemical vapor deposition and poly-Si films were subsequently formed on the seed layers with charged species. As a result, control of ion bombardment on the initial growth was found to be a key factor for forming poly-Si films with smooth surfaces and high crystallinity at low temperatures.}, pages = {1098--1100}, title = {Control of seed layer for a low temperature formation of polycrystalline silicon with high crystallinity and a smooth surface}, volume = {17}, year = {1999} }