{"created":"2021-03-01T06:12:02.288475+00:00","id":5474,"links":{},"metadata":{"_buckets":{"deposit":"c7c771f0-6627-4dab-85fc-d3722c41fd84"},"_deposit":{"id":"5474","owners":[],"pid":{"revision_id":0,"type":"depid","value":"5474"},"status":"published"},"_oai":{"id":"oai:nagoya.repo.nii.ac.jp:00005474","sets":["320:321:322"]},"author_link":["14120","14121","14122","14123"],"item_10_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"1999-05","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"3","bibliographicPageEnd":"1100","bibliographicPageStart":"1098","bibliographicVolumeNumber":"17","bibliographic_titles":[{"bibliographic_title":"Journal of Vacuum Science & Technology B","bibliographic_titleLang":"en"}]}]},"item_10_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"We have successfully improved the surface roughness and crystalline fraction of polycrystalline silicon (poly-Si) films formed on quartz substrates at 300 ℃ by controlling its initial growth. Seed layers were formed by eliminating charged species incident on the substrate during the initial growth in electron cyclotron resonance silane and hydrogen plasma-enhanced chemical vapor deposition and poly-Si films were subsequently formed on the seed layers with charged species. As a result, control of ion bombardment on the initial growth was found to be a key factor for forming poly-Si films with smooth surfaces and high crystallinity at low temperatures.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10_identifier_60":{"attribute_name":"URI","attribute_value_mlt":[{"subitem_identifier_type":"HDL","subitem_identifier_uri":"http://hdl.handle.net/2237/7079"}]},"item_10_publisher_32":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"American Institute of Physics","subitem_publisher_language":"en"}]},"item_10_relation_11":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.1116/1.590702","subitem_relation_type_select":"DOI"}}]},"item_10_rights_12":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"Copyright (1999) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.","subitem_rights_language":"en"}]},"item_10_select_15":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_select_item":"publisher"}]},"item_10_source_id_7":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"1071-1023","subitem_source_identifier_type":"PISSN"}]},"item_10_text_14":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_text_value":"application/pdf"}]},"item_1615787544753":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"open access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_abf2"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Murata, Kazuya","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"14120","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Ito, Masafumi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"14121","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Hori, Masaru","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"14122","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Goto, Toshio","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"14123","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2018-02-19"}],"displaytype":"detail","filename":"JVB001098.pdf","filesize":[{"value":"127.9 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"JVB001098.pdf","objectType":"fulltext","url":"https://nagoya.repo.nii.ac.jp/record/5474/files/JVB001098.pdf"},"version_id":"c2ec63f9-8354-4811-9da9-d2421f204a78"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Control of seed layer for a low temperature formation of polycrystalline silicon with high crystallinity and a smooth surface","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Control of seed layer for a low temperature formation of polycrystalline silicon with high crystallinity and a smooth surface","subitem_title_language":"en"}]},"item_type_id":"10","owner":"1","path":["322"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2006-10-26"},"publish_date":"2006-10-26","publish_status":"0","recid":"5474","relation_version_is_last":true,"title":["Control of seed layer for a low temperature formation of polycrystalline silicon with high crystallinity and a smooth surface"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-01-16T03:50:07.961717+00:00"}