{"created":"2021-03-01T06:12:03.343897+00:00","id":5491,"links":{},"metadata":{"_buckets":{"deposit":"6160af60-e29d-45cb-8eeb-0c122c2d08d8"},"_deposit":{"id":"5491","owners":[],"pid":{"revision_id":0,"type":"depid","value":"5491"},"status":"published"},"_oai":{"id":"oai:nagoya.repo.nii.ac.jp:00005491","sets":["320:321:322"]},"author_link":["14166","14167","14168","14169"],"item_10_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2002-11","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"6","bibliographicPageEnd":"2198","bibliographicPageStart":"2192","bibliographicVolumeNumber":"20","bibliographic_titles":[{"bibliographic_title":"Journal of Vacuum Science & Technology B","bibliographic_titleLang":"en"}]}]},"item_10_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"An environmentally benign etching process using a solid material evaporation technique has been investigated for preventing global warming. In this process, a polytetrafluoroethylene is evaporated by a CO_2 laser, resulting in production of fluorocarbon species working as the etching species. Therefore, this system employs no perfluorocompound feed gases, which cause global warming, and enables us to design a new plasma chemistry using the solid material. The system was successfully applied to a SiO_2 contact hole etching process employing a planar electron cyclotron resonance plasma. The etched profile was successfully controlled by varying the Ar dilution ratio and the process pressure. In a 0.6 μm contact hole and a 0.08 μm trench fabrication process, this novel process enables us to realize high etching performances, where the etching rate of SiO_2 , selectivities of SiO_2/resist, and SiO_2 /Si were 340 μm/min, 6.8 and 31, respectively, in optimal condition. To clarify the plasma chemistry using solid material evaporation, CF_x (x=1 – 3) radical densities and F atom density were measured by infrared diode laser absorption spectroscopy and actinometric optical emission spectroscopy, and fluorocarbon films deposited on SiO_2 were analyzed by x-ray photoelectron spectroscopy. On the basis of these results, the etching mechanism was discussed.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10_identifier_60":{"attribute_name":"URI","attribute_value_mlt":[{"subitem_identifier_type":"HDL","subitem_identifier_uri":"http://hdl.handle.net/2237/7097"}]},"item_10_publisher_32":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"American Institute of Physics","subitem_publisher_language":"en"}]},"item_10_relation_11":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.1116/1.1513632","subitem_relation_type_select":"DOI"}}]},"item_10_rights_12":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"Copyright (2002) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.","subitem_rights_language":"en"}]},"item_10_select_15":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_select_item":"publisher"}]},"item_10_source_id_7":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"1071-1023","subitem_source_identifier_type":"PISSN"}]},"item_10_text_14":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_text_value":"application/pdf"}]},"item_1615787544753":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"open access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_abf2"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Fujita, Kazushi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"14166","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Hori, Masaru","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"14167","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Goto, Toshio","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"14168","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Ito, Masafumi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"14169","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2018-02-19"}],"displaytype":"detail","filename":"JVB002192.pdf","filesize":[{"value":"458.2 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"JVB002192.pdf","objectType":"fulltext","url":"https://nagoya.repo.nii.ac.jp/record/5491/files/JVB002192.pdf"},"version_id":"ecafc6d6-4f84-4be7-bbdf-bb9a38afb4e4"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Silicon oxide contact hole etching employing an environmentally benign process","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Silicon oxide contact hole etching employing an environmentally benign process","subitem_title_language":"en"}]},"item_type_id":"10","owner":"1","path":["322"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2006-10-30"},"publish_date":"2006-10-30","publish_status":"0","recid":"5491","relation_version_is_last":true,"title":["Silicon oxide contact hole etching employing an environmentally benign process"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-01-16T03:50:08.584014+00:00"}