{"created":"2021-03-01T06:12:03.528149+00:00","id":5494,"links":{},"metadata":{"_buckets":{"deposit":"5c693a68-1513-4824-9e24-fcd6e37c679b"},"_deposit":{"id":"5494","owners":[],"pid":{"revision_id":0,"type":"depid","value":"5494"},"status":"published"},"_oai":{"id":"oai:nagoya.repo.nii.ac.jp:00005494","sets":["320:321:322"]},"author_link":["14179","14180","14181","14182"],"item_10_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2001-05-01","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"9","bibliographicPageEnd":"5087","bibliographicPageStart":"5083","bibliographicVolumeNumber":"89","bibliographic_titles":[{"bibliographic_title":"Journal of Applied Physics","bibliographic_titleLang":"en"}]}]},"item_10_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"We have clarified effects of ions and radicals on the film property of ultrathin silicon nitride (SiN_x) films of 5 nm in thickness formed on Si substrates at 300 ℃ in electron cyclotron resonance plasma-enhanced chemical vapor deposition (PECVD) employing ammonia and silane (NH_3/SiH_4), and nitrogen and silane (N_2/SiH_4) gases. In situ Fourier transform infrared reflection absorption spectroscopy and in situ x-ray photoelectron spectroscopy confirmed that in N_2/SiH_4 plasma, Si-N bonds in the film were increased by eliminating charged species, and thus, radicals promoted the formation of the SiN_x film of high Si-N bond density. On the other hand, Si-N bonds in the film were decreased by eliminating charged species, and eventually, ions played an important role in forming the film of high Si-N bond density in NH_3/SiH_4 plasma. The excellent hysteresis of 0.04 V was successfully achieved with the NH_3/SiH_4 plasma. Furthermore, the quadrupole mass spectroscopy suggests that {NH_4}^+ charged species make a significant contribution to the formation of ultrathin SiN_x films with high quality. These results provide insights into important species to be controlled in the PECVD for low temperature formation of the SiN_x gate dielectric films in ultralarge scale integrated circuits.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10_identifier_60":{"attribute_name":"URI","attribute_value_mlt":[{"subitem_identifier_type":"HDL","subitem_identifier_uri":"http://hdl.handle.net/2237/7099"}]},"item_10_publisher_32":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"American Institute of Physics","subitem_publisher_language":"en"}]},"item_10_relation_11":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.1063/1.1337939","subitem_relation_type_select":"DOI"}}]},"item_10_rights_12":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"Copyright (2001) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.","subitem_rights_language":"en"}]},"item_10_select_15":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_select_item":"publisher"}]},"item_10_source_id_7":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0021-8979","subitem_source_identifier_type":"PISSN"}]},"item_10_text_14":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_text_value":"application/pdf"}]},"item_1615787544753":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"open access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_abf2"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Ohta, Hiroyuki","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"14179","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Nagashima, Atsushi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"14180","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Hori, Masaru","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"14181","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Goto, Toshio","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"14182","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2018-02-19"}],"displaytype":"detail","filename":"JApplPhys_89_5083.pdf","filesize":[{"value":"419.0 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"JApplPhys_89_5083.pdf","objectType":"fulltext","url":"https://nagoya.repo.nii.ac.jp/record/5494/files/JApplPhys_89_5083.pdf"},"version_id":"6c28d01e-bc69-482d-8b51-6f4fe83db3d1"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Effect of ions and radicals on formation of silicon nitride gate dielectric films using plasma chemical vapor deposition","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Effect of ions and radicals on formation of silicon nitride gate dielectric films using plasma chemical vapor deposition","subitem_title_language":"en"}]},"item_type_id":"10","owner":"1","path":["322"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2006-10-30"},"publish_date":"2006-10-30","publish_status":"0","recid":"5494","relation_version_is_last":true,"title":["Effect of ions and radicals on formation of silicon nitride gate dielectric films using plasma chemical vapor deposition"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-01-16T03:50:06.978023+00:00"}