@article{oai:nagoya.repo.nii.ac.jp:00005495,
 author = {Inayoshi, Muneto and Ito, Masafumi and Hori, Masaru and Goto, Toshio and Hiramatsu, Mineo},
 issue = {1},
 journal = {Journal of Vacuum Science & Technology A},
 month = {Jan},
 note = {The surface reaction of CF_2 radicals on Si and fluorocarbon films was investigated in electron cyclotron resonance (ECR) Ar and H_2 /Ar downstream plasmas employing CF_2 radical injection technique. The effects of Ar^+ ions, Ar^* metastable species and radiation from plasmas on the fluorocarbon film formation were evaluated in ECR Ar downstream plasma with CF_2 radical injection. As a result, CF_2 radicals with assistance of Ar+^ ion bombardment were found to play an important role in the fluorocarbon film formation. The adsorptive reactions of CF_2 radicals on the fluorocarbon film surface with and without Ar and H_2 /Ar plasma exposures were successfully investigated by in situ Fourier transform infrared reflection absorption spectroscopy and in situ x-ray photoelectron spectroscopy. It was found that the formation of fluorocarbon film in the plasma proceeded through the adsorptive reaction of CF_2 radicals at a high probability on the active sites formed by the bombardment of Ar^+ ions on the fluorocarbon film surface.},
 pages = {233--238},
 title = {Surface reaction of CF_2 radicals for fluorocarbon film formation in SiO_2/Si selective etching process},
 volume = {16},
 year = {1998}
}