@article{oai:nagoya.repo.nii.ac.jp:00005496,
 author = {Ohta, Hiroyuki and Nagashima, Atsushi and Ito, Masafumi and Hori, Masaru and Goto, Toshio},
 issue = {5},
 journal = {Journal of Vacuum Science & Technology B},
 month = {Sep},
 note = {Silicon nitride (SiN_x) ultrathin gate dielectric films for ultralarge-scale integrated circuits have been successfully formed by radical chemical vapor deposition (R-CVD) at 300 ℃. In this process, charged species incident on the silicon (Si) substrate during the growth were eliminated with the magnetic field in electron cyclotron resonance plasma-enhanced CVD employing nitrogen and silane (N_2 /SiH_4) gases. By using R-CVD, SiN_x films with very low leakage current and near-ideal dielectric constant (ε=7.2) have been obtained. In situ Fourier transform infrared reflection absorption spectroscopy (FT-IR RAS) has confirmed that the Si–N bonds are increased and the voids in films are reduced by eliminating charged species. A key factor for forming ultrathin SiN_x films of high quality at 300 ℃ is discussed, based on characterization of films synthesized with and without charged species on the substrate using in situ x-ray photoelectron spectroscopy, in situ FT-IR RAS, and in situ atomic force microscopy.},
 pages = {2486--2490},
 title = {Formation of silicon nitride gate dielectric films at 300 ℃ employing radical chemical vapor deposition},
 volume = {18},
 year = {2000}
}