{"created":"2021-03-01T06:12:03.776846+00:00","id":5498,"links":{},"metadata":{"_buckets":{"deposit":"5112e212-c257-480b-8a2e-8f4abbd7fd5b"},"_deposit":{"id":"5498","owners":[],"pid":{"revision_id":0,"type":"depid","value":"5498"},"status":"published"},"_oai":{"id":"oai:nagoya.repo.nii.ac.jp:00005498","sets":["320:321:322"]},"author_link":["14197","14198"],"item_10_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2003-04-01","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"7","bibliographicPageEnd":"3775","bibliographicPageStart":"3765","bibliographicVolumeNumber":"93","bibliographic_titles":[{"bibliographic_title":"Journal of Applied Physics","bibliographic_titleLang":"en"}]}]},"item_10_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Damaged structures of α-SiC below and above the critical temperature of amorphization (T_c) under high-energy electron irradiation were studied by means of transmission electron microscopy and electron energy-loss spectroscopy. Above T_c , crystal fragmentation takes place due to local lattice strains caused by preferential displacements, subsequent outward diffusion of carbon atoms and formation of silicon nano-clusters. On the other hand, the amorphous structure formed below T_c can be well characterized by the formation of Si–Si, Si–C, and sp^3 C–C covalent bonds with the tetrahedral coordination locally retained and uniformly distributed. The primary amorphization process under electron irradiation can be interpreted by the defect-accumulation model, in which displaced atoms are frozen at interstitial sites before long-distance diffusion by reconstructing the surrounding structure to relax the local strains. Accordingly the amorphization process is controlled essentially by the mobility of displaced carbon and silicon atoms, and chemical disordering seems to play a minor role in triggering the amorphization. A key issue for irradiation induced volume swelling of amorphous SiC is also presented.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10_identifier_60":{"attribute_name":"URI","attribute_value_mlt":[{"subitem_identifier_type":"HDL","subitem_identifier_uri":"http://hdl.handle.net/2237/7104"}]},"item_10_publisher_32":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"American Institute of Physics","subitem_publisher_language":"en"}]},"item_10_relation_11":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.1063/1.1555673","subitem_relation_type_select":"DOI"}}]},"item_10_rights_12":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"Copyright (2003) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.","subitem_rights_language":"en"}]},"item_10_select_15":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_select_item":"publisher"}]},"item_10_source_id_7":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"00218979","subitem_source_identifier_type":"PISSN"}]},"item_10_text_14":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_text_value":"application/pdf"}]},"item_1615787544753":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"open access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_abf2"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Muto, Shunsuke","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"14197","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Tanabe, Tetsuo","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"14198","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2018-02-19"}],"displaytype":"detail","filename":"JApplPhys_93_3765.pdf","filesize":[{"value":"1.1 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"JApplPhys_93_3765.pdf","objectType":"fulltext","url":"https://nagoya.repo.nii.ac.jp/record/5498/files/JApplPhys_93_3765.pdf"},"version_id":"bbfe2993-dae6-408e-8c4b-1ff16ba318fb"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Local structures and damage processes of electron irradiated α-SiC studied with transmission electron microscopy and electron　energy-loss spectroscopy","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Local structures and damage processes of electron irradiated α-SiC studied with transmission electron microscopy and electron　energy-loss spectroscopy","subitem_title_language":"en"}]},"item_type_id":"10","owner":"1","path":["322"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2006-11-07"},"publish_date":"2006-11-07","publish_status":"0","recid":"5498","relation_version_is_last":true,"title":["Local structures and damage processes of electron irradiated α-SiC studied with transmission electron microscopy and electron　energy-loss spectroscopy"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-01-16T03:50:09.764664+00:00"}