@article{oai:nagoya.repo.nii.ac.jp:00005510,
 author = {Takeuchi, T. and Onogi, T. and Otagiri, T. and Mizutani, U. and Sato, H. and Kato, K. and Kamiyama, T.},
 issue = {18},
 journal = {Physical Review B},
 month = {Nov},
 note = {Electrical resistivity of Al_{82.6-x}Re_{17.4}Si_x (7≼x≼12) 1/1-1/1-1/1 approximants was discussed in terms of their electronic structure near the Fermi level and the local atomic arrangements. Strong composition dependence of the electrical resistivity was observed for these 1/1-1/1/-1/1 approximants; samples with x=7, 9, and 12 show the Boltzmann-type electrical resistivity, while the others possess behaviors expected for system under the weak-localization.We found that the weak localization effect in the electrical resistivity, which is one of the characteristics of the corresponding Al-based quasicrystals, appears only when a condition of very low density of states with imperfections in the periodicity is satisfied. The Boltzmann-type behavior, on the other hand, takes place when one of the two factors, the very low density of states or the imperfection in the periodicity, is absent from the structure of the 1/1-1/1-1/1 approximant.},
 pages = {184203--184203},
 title = {Contribution of local atomic arrangements and electronic structure to high electrical resistivity in the Al_{82.6-x}Re_{17.4}Si_x (7≼x≼12) 1/1-1/1-1/1 approximant},
 volume = {68},
 year = {2003}
}