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  1. B200 工学部/工学研究科
  2. B200a 雑誌掲載論文
  3. 学術雑誌

Double Resonance Mechanism of Ferromagnetism and Magnetotransport in (Ga-Mn)As

http://hdl.handle.net/2237/7126
http://hdl.handle.net/2237/7126
2a307576-f9f3-469c-afc7-906871293ce5
名前 / ファイル ライセンス アクション
p4610_1.pdf p4610_1.pdf (101.3 kB)
Item type 学術雑誌論文 / Journal Article(1)
公開日 2006-11-29
タイトル
タイトル Double Resonance Mechanism of Ferromagnetism and Magnetotransport in (Ga-Mn)As
言語 en
著者 Inoue, J.

× Inoue, J.

WEKO 14291

en Inoue, J.

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Nonoyama, S.

× Nonoyama, S.

WEKO 14292

en Nonoyama, S.

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Itoh, H.

× Itoh, H.

WEKO 14293

en Itoh, H.

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アクセス権
アクセス権 open access
アクセス権URI http://purl.org/coar/access_right/c_abf2
権利
言語 en
権利情報 Copyright: American Physical Society, All rights reserved.
抄録
内容記述 We calculate the electronic states of the Mn-doped semiconductors and show that resonant states are formed at the top of the down spin valence band due to magnetic impurities and that they give rise to a strong and long-ranged ferromagnetic coupling between Mn moments. We propose that the coupling of the resonant states, in addition to the intra-atomic exchange interaction between the resonant and nonbonding states, is the origin of the ferromagnetism of (Ga-Mn)As. The mechanism is thus called “double resonance.” The resonant states bring about the spin-dependent resistivity to produce magnetoresistive properties in (Ga-Mn)As and their junctions.
言語 en
内容記述タイプ Abstract
出版者
言語 en
出版者 The American Physical Society
言語
言語 eng
資源タイプ
資源タイプresource http://purl.org/coar/resource_type/c_6501
タイプ journal article
出版タイプ
出版タイプ VoR
出版タイプResource http://purl.org/coar/version/c_970fb48d4fbd8a85
DOI
関連タイプ isVersionOf
識別子タイプ DOI
関連識別子 https://doi.org/10.1103/PhysRevLett.85.4610
ISSN
収録物識別子タイプ PISSN
収録物識別子 0031-9007
書誌情報 en : Physical Review Letters

巻 85, 号 21, p. 4610-4613, 発行日 2000-11
フォーマット
application/pdf
著者版フラグ
値 publisher
URI
識別子 http://hdl.handle.net/2237/7126
識別子タイプ HDL
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