@article{oai:nagoya.repo.nii.ac.jp:00005520,
 author = {Inoue, J. and Nonoyama, S. and Itoh, H.},
 issue = {21},
 journal = {Physical Review Letters},
 month = {Nov},
 note = {We calculate the electronic states of the Mn-doped semiconductors and show that resonant states are formed at the top of the down spin valence band due to magnetic impurities and that they give rise to a strong and long-ranged ferromagnetic coupling between Mn moments. We propose that the coupling of the resonant states, in addition to the intra-atomic exchange interaction between the resonant and nonbonding states, is the origin of the ferromagnetism of (Ga-Mn)As. The mechanism is thus called “double resonance.” The resonant states bring about the spin-dependent resistivity to produce magnetoresistive properties in (Ga-Mn)As and their junctions.},
 pages = {4610--4613},
 title = {Double Resonance Mechanism of Ferromagnetism and Magnetotransport in (Ga-Mn)As},
 volume = {85},
 year = {2000}
}