@article{oai:nagoya.repo.nii.ac.jp:00007094,
 author = {Ishida, Yukiaki and Fujimori, Atsushi and Ohta, Hiromichi and Hirano, Masahiro and Hosono, Hideo},
 issue = {15},
 journal = {APPLIED PHYSICS LETTERS},
 month = {Oct},
 note = {The authors have performed a depth-profile analysis of an all-oxide p-n junction diode n-ZnO/ p-NiO using photoemission spectroscopy combined with Ar-ion sputtering. Systematic core-level shifts were observed during the gradual removal of the ZnO overlayer, and were interpreted using a model based on charge conservation. Spatial profile of the potential around the interface was deduced, including the charge-depletion width of 2.3 nm extending on the ZnO side and the built-in potential of 0.54 eV.},
 pages = {153502--153502},
 title = {Potential profiling of the nanometer-scale charge-depletion layer in n-ZnO/p-NiO junction using photoemission spectroscopy},
 volume = {89},
 year = {2006}
}