@article{oai:nagoya.repo.nii.ac.jp:00007101,
 author = {Osaka, J. and Kumar, Senthil  M. and Toyoda, H. and Ishijima, T. and Sugai, H. and Mizutani, T.},
 issue = {17},
 journal = {APPLIED PHYSICS LETTERS},
 month = {Apr},
 note = {To identify the species which contribute to GaN growth, the authors investigated the discharge parameter (0.3–4.8 SCCM (SCCM denotes cubic centimeter per minute at STP), 150–400 W) dependences of the atomic N flux by appearance mass spectrometry and of the incorporated nitrogen atoms into GaN layers grown by plasma-assisted molecular beam epitaxy (PAMBE) using the rf-plasma source. Ion fluxes were also evaluated by ion current measurements. A good correlation between the supplied atomic N flux and the incorporated nitrogen flux was obtained under a wide range of plasma conditions. It was clarified that the atomic N plays a dominant role in the growth of GaN by PAMBE.},
 pages = {172114--172114},
 title = {Role of atomic nitrogen during GaN growth by plasma-assisted molecular beam epitaxy revealed by appearance mass spectrometry},
 volume = {90},
 year = {2007}
}