{"created":"2021-03-01T06:13:44.694848+00:00","id":7101,"links":{},"metadata":{"_buckets":{"deposit":"ca346781-6bba-417b-b810-5f8bab124a7f"},"_deposit":{"id":"7101","owners":[],"pid":{"revision_id":0,"type":"depid","value":"7101"},"status":"published"},"_oai":{"id":"oai:nagoya.repo.nii.ac.jp:00007101","sets":["320:321:322"]},"author_link":["19188","19189","19190","19191","19192","19193"],"item_10_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2007-04-23","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"17","bibliographicPageEnd":"172114","bibliographicPageStart":"172114","bibliographicVolumeNumber":"90","bibliographic_titles":[{"bibliographic_title":"APPLIED PHYSICS LETTERS","bibliographic_titleLang":"en"}]}]},"item_10_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"To identify the species which contribute to GaN growth, the authors investigated the discharge parameter (0.3–4.8 SCCM (SCCM denotes cubic centimeter per minute at STP), 150–400 W) dependences of the atomic N flux by appearance mass spectrometry and of the incorporated nitrogen atoms into GaN layers grown by plasma-assisted molecular beam epitaxy (PAMBE) using the rf-plasma source. Ion fluxes were also evaluated by ion current measurements. A good correlation between the supplied atomic N flux and the incorporated nitrogen flux was obtained under a wide range of plasma conditions. It was clarified that the atomic N plays a dominant role in the growth of GaN by PAMBE.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10_identifier_60":{"attribute_name":"URI","attribute_value_mlt":[{"subitem_identifier_type":"HDL","subitem_identifier_uri":"http://hdl.handle.net/2237/8775"}]},"item_10_publisher_32":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"American Institute of Physics","subitem_publisher_language":"en"}]},"item_10_relation_11":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.1063/1.2734390","subitem_relation_type_select":"DOI"}}]},"item_10_rights_12":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"Copyright (2007) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.","subitem_rights_language":"en"}]},"item_10_select_15":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_select_item":"publisher"}]},"item_10_source_id_7":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0003-6951","subitem_source_identifier_type":"PISSN"}]},"item_10_text_14":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_text_value":"application/pdf"}]},"item_1615787544753":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"open access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_abf2"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Osaka, J.","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"19188","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Kumar, Senthil  M.","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"19189","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Toyoda, H.","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"19190","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Ishijima, T.","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"19191","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Sugai, H.","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"19192","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Mizutani, T.","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"19193","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2018-02-19"}],"displaytype":"detail","filename":"AppPhysLett_90-172114.pdf","filesize":[{"value":"74.6 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"AppPhysLett_90-172114.pdf","objectType":"fulltext","url":"https://nagoya.repo.nii.ac.jp/record/7101/files/AppPhysLett_90-172114.pdf"},"version_id":"ba25dc32-7c8e-4d44-a2d9-6ef9354dc762"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Role of atomic nitrogen during GaN growth by plasma-assisted molecular beam epitaxy revealed by appearance mass spectrometry","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Role of atomic nitrogen during GaN growth by plasma-assisted molecular beam epitaxy revealed by appearance mass spectrometry","subitem_title_language":"en"}]},"item_type_id":"10","owner":"1","path":["322"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2007-09-25"},"publish_date":"2007-09-25","publish_status":"0","recid":"7101","relation_version_is_last":true,"title":["Role of atomic nitrogen during GaN growth by plasma-assisted molecular beam epitaxy revealed by appearance mass spectrometry"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-01-16T03:52:35.640959+00:00"}