@article{oai:nagoya.repo.nii.ac.jp:00007103,
 author = {Kurita, Daisuke and Ohta, Shingo and Sugiura, kenji and Ohta, Hiromichi and Koumoto, Kunihito},
 issue = {9},
 journal = {JOURNAL OF APPLIED PHYSICS},
 month = {Nov},
 note = {To compare the intrinsic thermoelectric (TE) properties of heavily Nb-doped TiO2 to those of heavily Nb-doped SrTiO3 [S. Ohta et al., Appl. Phys. Lett. 87, 092108 (2005)], the electrical conductivity (δ), carrier concentration (n_e), Hall mobility (μHall), and Seebeck coefficient (S) of heavily Nb-doped TiO2 (anatase) epitaxial films were measured at high temperatures (300–900 K). The epitaxial films were grown on the (100)-face of LaAlO3 single-crystalline substrates by a pulsed-laser deposition technique at 800 °C. The carrier effective mass (m*) of the anatase TiO2 epitaxial films was ～1m0, which is an order of magnitude smaller than that of Nb-doped SrTiO3 (～10m0). The estimated TE power factor (S^2 δ) of the ～2%-Nb-doped anatase TiO2 film (n_e～5 ×10^20 cm^−3) was ～2.5×10^−4 Wm^−1 K^−2 at 900 K, which is approximately 15% of the 20%-Nb-doped SrTiO3 (1.5×10^−3 Wm^−1 K^−2). The present findings will help establish a future TE material design concept for Ti-based metal oxides.},
 pages = {096105--096105},
 title = {Carrier generation and transport properties of heavily Nb-doped anatase TiO2 epitaxial films at high temperatures},
 volume = {100},
 year = {2006}
}