{"created":"2021-03-01T06:13:44.817096+00:00","id":7103,"links":{},"metadata":{"_buckets":{"deposit":"fa51b07d-a72a-41ef-b2ee-85358a5a66ea"},"_deposit":{"id":"7103","owners":[],"pid":{"revision_id":0,"type":"depid","value":"7103"},"status":"published"},"_oai":{"id":"oai:nagoya.repo.nii.ac.jp:00007103","sets":["320:321:322"]},"author_link":["19198","19199","19200","19201","19202"],"item_10_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2006-11-01","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"9","bibliographicPageEnd":"096105","bibliographicPageStart":"096105","bibliographicVolumeNumber":"100","bibliographic_titles":[{"bibliographic_title":"JOURNAL OF APPLIED PHYSICS","bibliographic_titleLang":"en"}]}]},"item_10_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"To compare the intrinsic thermoelectric (TE) properties of heavily Nb-doped TiO2 to those of heavily Nb-doped SrTiO3 [S. Ohta et al., Appl. Phys. Lett. 87, 092108 (2005)], the electrical conductivity (δ), carrier concentration (n_e), Hall mobility (μHall), and Seebeck coefficient (S) of heavily Nb-doped TiO2 (anatase) epitaxial films were measured at high temperatures (300–900 K). The epitaxial films were grown on the (100)-face of LaAlO3 single-crystalline substrates by a pulsed-laser deposition technique at 800 °C. The carrier effective mass (m*) of the anatase TiO2 epitaxial films was ～1m0, which is an order of magnitude smaller than that of Nb-doped SrTiO3 (～10m0). The estimated TE power factor (S^2 δ) of the ～2%-Nb-doped anatase TiO2 film (n_e～5 ×10^20 cm^−3) was ～2.5×10^−4 Wm^−1 K^−2 at 900 K, which is approximately 15% of the 20%-Nb-doped SrTiO3 (1.5×10^−3 Wm^−1 K^−2). The present findings will help establish a future TE material design concept for Ti-based metal oxides.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10_identifier_60":{"attribute_name":"URI","attribute_value_mlt":[{"subitem_identifier_type":"HDL","subitem_identifier_uri":"http://hdl.handle.net/2237/8777"}]},"item_10_publisher_32":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"American Institute of Physics","subitem_publisher_language":"en"}]},"item_10_relation_11":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.1063/1.2362990","subitem_relation_type_select":"DOI"}}]},"item_10_rights_12":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"Copyright (2006) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.","subitem_rights_language":"en"}]},"item_10_select_15":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_select_item":"publisher"}]},"item_10_source_id_7":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0021-8979","subitem_source_identifier_type":"PISSN"}]},"item_10_text_14":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_text_value":"application/pdf"}]},"item_1615787544753":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"open access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_abf2"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Kurita, Daisuke","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"19198","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Ohta, Shingo","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"19199","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Sugiura, kenji","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"19200","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Ohta, Hiromichi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"19201","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Koumoto, Kunihito","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"19202","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2018-02-19"}],"displaytype":"detail","filename":"JourAppPhys_100-96105.pdf","filesize":[{"value":"437.1 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"JourAppPhys_100-96105.pdf","objectType":"fulltext","url":"https://nagoya.repo.nii.ac.jp/record/7103/files/JourAppPhys_100-96105.pdf"},"version_id":"58a85f7c-b0ba-488b-9c38-bbf621d405d1"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Carrier generation and transport properties of heavily Nb-doped anatase TiO2 epitaxial films at high temperatures","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Carrier generation and transport properties of heavily Nb-doped anatase TiO2 epitaxial films at high temperatures","subitem_title_language":"en"}]},"item_type_id":"10","owner":"1","path":["322"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2007-09-25"},"publish_date":"2007-09-25","publish_status":"0","recid":"7103","relation_version_is_last":true,"title":["Carrier generation and transport properties of heavily Nb-doped anatase TiO2 epitaxial films at high temperatures"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-01-16T03:52:34.812606+00:00"}