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シリコン単結晶の重回帰分析を用いたX線応力測定
http://hdl.handle.net/2237/9153
http://hdl.handle.net/2237/9153c8e25879-e2f7-4d3b-95d0-8078bd2fd4ce
名前 / ファイル | ライセンス | アクション |
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2007-12-14 | |||||
タイトル | ||||||
タイトル | シリコン単結晶の重回帰分析を用いたX線応力測定 | |||||
言語 | ja | |||||
その他のタイトル | ||||||
その他のタイトル | X-Ray Stress Measurement of Silicon Single Crystal Using Multiple Regression Analysis | |||||
言語 | en | |||||
著者 |
田中, 啓介
× 田中, 啓介× TANAKA, Keisuke× 水野, 賢一× MIZUNO, Kenichi× 町屋, 修太郎× MACHIYA, Shutaro× 秋庭, 義明× AKINIWA, Yoshiaki |
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アクセス権 | ||||||
アクセス権 | open access | |||||
アクセス権URI | http://purl.org/coar/access_right/c_abf2 | |||||
権利 | ||||||
言語 | ja | |||||
権利情報 | 日本機械学会 | |||||
権利 | ||||||
言語 | ja | |||||
権利情報 | 本文データは学協会の許諾に基づきCiNiiから複製したものである。 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | Residual Stress | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | Experimental Stress Analysis | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | Ceramics | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | Silicon Single Crystal | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | X-ray Stress Measurement | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | Four-Point Bending | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | Measurement Condition | |||||
抄録 | ||||||
内容記述 | Multiple regression analysis was applied to the X-ray stress measurements of silicon single crystal wafer which has the [001] direction perpendicular to the surface. Using an X-ray diffractometer with parallel beam optics, X-ray profiles were recored by a scintillation counter while the specimen was oscillated around two axes. The X-ray measurement conditions were first determined, and then the method was successfully applied to measure the loading stress in a silicon single specimen subjected to four-point bending. The oscillation of the specimen between ±1 to 2 deg during recording was necessary to determine in peak position. An setting error of the specimen position of ±100 μm gave an error in diffraction angle of ±0.004 deg at most, corresponding to an error in stress of 3 MPa. The uniaxial stress was applied in [110] direction (longitudinal direction) of the specimen. Three stress components, σ11, σ22, and σ12 were determined from the measurement of diffraction angles of five diffractions, 133, 133, 313, 313, 331, which had the same spacing between diffraction planes. The measured stress of σ11 is 0.993 of the applied stress and the two other components, σ22 and σ12, were nearly zero. Multiple regression analysis was proved to be powerful to determine three stress components of single crystals under the plane stress state. The residual stress in polished silicone wafer was small tension of the order of 10 MPa. | |||||
言語 | en | |||||
内容記述タイプ | Abstract | |||||
出版者 | ||||||
言語 | ja | |||||
出版者 | 日本機械学会 | |||||
言語 | ||||||
言語 | jpn | |||||
資源タイプ | ||||||
資源タイプresource | http://purl.org/coar/resource_type/c_6501 | |||||
タイプ | journal article | |||||
出版タイプ | ||||||
出版タイプ | VoR | |||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
関連情報 | ||||||
関連タイプ | isVersionOf | |||||
識別子タイプ | URI | |||||
関連識別子 | http://ci.nii.ac.jp/naid/110004731592/ | |||||
ISSN | ||||||
収録物識別子タイプ | PISSN | |||||
収録物識別子 | 0387-5008 | |||||
書誌情報 |
ja : 日本機械学會論文集 A編 巻 72, 号 717, p. 765-771, 発行日 2006-05 |
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フォーマット | ||||||
application/pdf | ||||||
著者版フラグ | ||||||
値 | publisher | |||||
URI | ||||||
識別子 | http://hdl.handle.net/2237/9153 | |||||
識別子タイプ | HDL |