{"_buckets": {"deposit": "e116e697-37b5-41f0-a72e-20c6a8d15c38"}, "_deposit": {"id": "7758", "owners": [], "pid": {"revision_id": 0, "type": "depid", "value": "7758"}, "status": "published"}, "_oai": {"id": "oai:nagoya.repo.nii.ac.jp:00007758", "sets": ["322"]}, "author_link": ["22009", "22010", "22011", "22012"], "item_10_biblio_info_6": {"attribute_name": "書誌情報", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2007", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "7", "bibliographicPageEnd": "551", "bibliographicPageStart": "549", "bibliographicVolumeNumber": "28", "bibliographic_titles": [{"bibliographic_title": "IEEE Electron Device Letters", "bibliographic_titleLang": "en"}]}]}, "item_10_description_4": {"attribute_name": "抄録", "attribute_value_mlt": [{"subitem_description": "AlGaN/GaN HEMTs with a thin InGaN cap layer have been proposed to implement the normally off HEMTs. The key idea is to employ the polarization-induced field in the InGaN cap layer, by which the conduction band is raised, which leads to the normally off operation. The fabricated HEMT with an In0.2Ga0.8N cap layer with a thickness of 5 nm showed normally off operation with a threshold voltage of 0.4 V and a maximum transconductance of 85 mS/mm for the device with a 1.9-μm-long gate. By etching off the In0.2Ga0.8N cap layer at the access region using gate electrode as an etching mask, the maximum transconductance has increased from 85 to 130 mS/mm due to a reduction of the parasitic source resistance.", "subitem_description_language": "en", "subitem_description_type": "Abstract"}]}, "item_10_identifier_60": {"attribute_name": "URI", "attribute_value_mlt": [{"subitem_identifier_type": "HDL", "subitem_identifier_uri": "http://hdl.handle.net/2237/9477"}]}, "item_10_publisher_32": {"attribute_name": "出版者", "attribute_value_mlt": [{"subitem_publisher": "IEEE", "subitem_publisher_language": "en"}]}, "item_10_relation_11": {"attribute_name": "DOI", "attribute_value_mlt": [{"subitem_relation_type": "isVersionOf", "subitem_relation_type_id": {"subitem_relation_type_id_text": "https://doi.org/10.1109/LED.2007.900202", "subitem_relation_type_select": "DOI"}}]}, "item_10_rights_12": {"attribute_name": "権利", "attribute_value_mlt": [{"subitem_rights": "Copyright © 2007 IEEE. Reprinted from (relevant publication info). This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of Nagoya University’s products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to pubs-permissions@ieee.org.", "subitem_rights_language": "en"}]}, "item_10_select_15": {"attribute_name": "著者版フラグ", "attribute_value_mlt": [{"subitem_select_item": "publisher"}]}, "item_10_source_id_7": {"attribute_name": "ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "0741-3106", "subitem_source_identifier_type": "PISSN"}]}, "item_10_text_14": {"attribute_name": "フォーマット", "attribute_value_mlt": [{"subitem_text_value": "application/pdf"}]}, "item_1615787544753": {"attribute_name": "出版タイプ", "attribute_value_mlt": [{"subitem_version_resource": "http://purl.org/coar/version/c_970fb48d4fbd8a85", "subitem_version_type": "VoR"}]}, "item_access_right": {"attribute_name": "アクセス権", "attribute_value_mlt": [{"subitem_access_right": "open access", "subitem_access_right_uri": "http://purl.org/coar/access_right/c_abf2"}]}, "item_creator": {"attribute_name": "著者", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Mizutani, T.", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "22009", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Ito, M.", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "22010", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Kishimoto, S.", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "22011", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Nakamura, F.", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "22012", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "ファイル情報", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2018-02-19"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "Mizutani_1.pdf", "filesize": [{"value": "286.0 kB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_note", "mimetype": "application/pdf", "size": 286000.0, "url": {"label": "Mizutani_1.pdf", "objectType": "fulltext", "url": "https://nagoya.repo.nii.ac.jp/record/7758/files/Mizutani_1.pdf"}, "version_id": "2b7cfb5c-005f-4258-8f91-4cdcad8053b8"}]}, "item_keyword": {"attribute_name": "キーワード", "attribute_value_mlt": [{"subitem_subject": "AlGaN/GaN", "subitem_subject_scheme": "Other"}, {"subitem_subject": "HEMT", "subitem_subject_scheme": "Other"}, {"subitem_subject": "InGaN cap", "subitem_subject_scheme": "Other"}, {"subitem_subject": "normally off", "subitem_subject_scheme": "Other"}, {"subitem_subject": "polarization-induced field", "subitem_subject_scheme": "Other"}]}, "item_language": {"attribute_name": "言語", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "AlGaN/GaN HEMTs With Thin InGaN Cap Layer for Normally Off Operation", "item_titles": {"attribute_name": "タイトル", "attribute_value_mlt": [{"subitem_title": "AlGaN/GaN HEMTs With Thin InGaN Cap Layer for Normally Off Operation", "subitem_title_language": "en"}]}, "item_type_id": "10", "owner": "1", "path": ["322"], "permalink_uri": "http://hdl.handle.net/2237/9477", "pubdate": {"attribute_name": "PubDate", "attribute_value": "2008-02-26"}, "publish_date": "2008-02-26", "publish_status": "0", "recid": "7758", "relation": {}, "relation_version_is_last": true, "title": ["AlGaN/GaN HEMTs With Thin InGaN Cap Layer for Normally Off Operation"], "weko_shared_id": -1}