@article{oai:nagoya.repo.nii.ac.jp:00007758,
 author = {Mizutani, T. and Ito, M. and Kishimoto, S. and Nakamura, F.},
 issue = {7},
 journal = {IEEE Electron Device Letters},
 month = {},
 note = {AlGaN/GaN HEMTs with a thin InGaN cap layer have been proposed to implement the normally off HEMTs. The key idea is to employ the polarization-induced field in the InGaN cap layer, by which the conduction band is raised, which leads to the normally off operation. The fabricated HEMT with an In0.2Ga0.8N cap layer with a thickness of 5 nm showed normally off operation with a threshold voltage of 0.4 V and a maximum transconductance of 85 mS/mm for the device with a 1.9-μm-long gate. By etching off the In0.2Ga0.8N cap layer at the access region using gate electrode as an etching mask, the maximum transconductance has increased from 85 to 130 mS/mm due to a reduction of the parasitic source resistance.},
 pages = {549--551},
 title = {AlGaN/GaN HEMTs With Thin InGaN Cap Layer for Normally Off Operation},
 volume = {28},
 year = {2007}
}