{"created":"2021-03-01T06:14:29.707331+00:00","id":7817,"links":{},"metadata":{"_buckets":{"deposit":"18270fdc-e7ee-4c91-ae26-c55eff1b852f"},"_deposit":{"id":"7817","owners":[],"pid":{"revision_id":0,"type":"depid","value":"7817"},"status":"published"},"_oai":{"id":"oai:nagoya.repo.nii.ac.jp:00007817","sets":["320:321:322"]},"author_link":["22253","22254","22255","22256"],"item_10_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2006","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"321","bibliographicPageStart":"318","bibliographic_titles":[{"bibliographic_title":"19th IEEE International Conference on Micro Electro Mechanical Systems","bibliographic_titleLang":"en"}]}]},"item_10_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"We propose a new explanation for the difference between the etching properties of potassium-hydroxide (KOH) and tetramethyl-ammonium-hydroxide (TMAH) by focusing on the volume fraction occupied by the corresponding cations, K＋ for KOH and TMA＋ (with molecular structure N(CH3)4＋) for TMAH. We have found experimentally that the differences in the surface morphology of Si(111) after etching can be explained by considering the cation volume fraction and that this parameter can also be used to explain the changes in the etch rates between different etchants, or between different concentrations of the same etchant, suggesting a universal behavior for any etching system. This finding simplifies the understanding of the mechanism of silicon anisotropic etching.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10_identifier_60":{"attribute_name":"URI","attribute_value_mlt":[{"subitem_identifier_type":"HDL","subitem_identifier_uri":"http://hdl.handle.net/2237/9537"}]},"item_10_publisher_32":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"IEEE","subitem_publisher_language":"en"}]},"item_10_relation_11":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.1109/MEMSYS.2006.1627800","subitem_relation_type_select":"DOI"}}]},"item_10_relation_8":{"attribute_name":"ISBN","attribute_value_mlt":[{"subitem_relation_type":"isPartOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"0-7803-9475-5","subitem_relation_type_select":"ISBN"}}]},"item_10_rights_12":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"Copyright © 2006 IEEE. Reprinted from (relevant publication info). This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of Nagoya University’s products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to pubs-permissions@ieee.org.","subitem_rights_language":"en"}]},"item_10_select_15":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_select_item":"publisher"}]},"item_10_source_id_7":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"1084-6999","subitem_source_identifier_type":"PISSN"}]},"item_10_text_14":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_text_value":"application/pdf"}]},"item_1615787544753":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"open access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_abf2"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Cheng, D.","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"22253","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Gosálvez, M.A.","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"22254","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Shikida, M.","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"22255","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Sato, K.","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"22256","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2018-02-19"}],"displaytype":"detail","filename":"shik_02.pdf","filesize":[{"value":"305.0 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"shik_02.pdf","objectType":"fulltext","url":"https://nagoya.repo.nii.ac.jp/record/7817/files/shik_02.pdf"},"version_id":"52e075d1-4abf-4d55-9d61-b39889b09c7c"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"A Universal Parameter for Sillicon Anisotropic Etching In Alkaline Solutions","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"A Universal Parameter for Sillicon Anisotropic Etching In Alkaline Solutions","subitem_title_language":"en"}]},"item_type_id":"10","owner":"1","path":["322"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2008-02-29"},"publish_date":"2008-02-29","publish_status":"0","recid":"7817","relation_version_is_last":true,"title":["A Universal Parameter for Sillicon Anisotropic Etching In Alkaline Solutions"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-01-16T03:53:20.134617+00:00"}