@article{oai:nagoya.repo.nii.ac.jp:00007847,
 author = {Nakao, S. and Ando, T. and Shikida, M. and Sato, K.},
 journal = {Solid-State Sensors, Actuators and Microsystems Conference},
 month = {},
 note = {We developed a quasi-static tensile test system that controls environmental conditions, such as pressure, temperature, and surrounding gasses. Using this system, we evaluated the fracture properties of micron- and submicron-thick single-crystal-silicon film under several conditions. The strength of silicon measured in vacuum or helium was slightly higher than that in laboratory air. We measured the fracture toughness at different temperatures ranging from room temperature (RT) to 500ºC and found a brittle-to-ductile transition at 70ºC for micron-sized silicon film. The fracture toughness drastically increased at the transition temperature and saturated at a level of 2.5 MPa √ m , which is twice the value at RT. On the other hand, submicron-thick silicon was less brittle: its fracture toughness was already 2.7 MPa √m at RT.},
 pages = {375--378},
 title = {Effects of Environmental Condition on the Strength of Submicron-Thick Single Crystal Silicon Film},
 year = {2007}
}