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An improved anisotropic wet etching process for the fabrication of silicon MEMS structures using a single etching mask
http://hdl.handle.net/2237/11137
http://hdl.handle.net/2237/111375d762413-5786-460c-a677-e7c6d7b8513d
名前 / ファイル | ライセンス | アクション |
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2009-02-23 | |||||
タイトル | ||||||
タイトル | An improved anisotropic wet etching process for the fabrication of silicon MEMS structures using a single etching mask | |||||
言語 | en | |||||
著者 |
Pal, P.
× Pal, P.× Sato, K.× Gosalvez, M.A.× Shikida, M.× 佐藤, 一雄 |
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アクセス権 | ||||||
アクセス権 | open access | |||||
アクセス権URI | http://purl.org/coar/access_right/c_abf2 | |||||
権利 | ||||||
言語 | en | |||||
権利情報 | Copyright © 2008 IEEE. Reprinted from IEEE 21st International Conference on Micro Electro Mechanical Systems, 2008, MEMS, p.327-330. This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of Nagoya University’s products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to pubs-permissions@ieee.org. | |||||
抄録 | ||||||
内容記述 | We have developed an improved anisotropic wet etching process for the fabrication of various silicon microstructures with rounded concave and sharp convex corners, grooves for chip isolation, meandering microfluidic channels, mesa structures with bent V-grooves, and 45º mirrors with highly smooth surface finish by using a single etching mask on (100) wafers. In this work, we use a CMOS compatible anisotropic etchant containing tetramethyl ammonium hydroxide (TMAH) and a small amount (0.1% v/v) of a non-ionic surfactant (NC-200), containing 100% polyoxyethylene-alkylphenyl-ether. The process has been developed by analyzing the etching characteristics of (100) silicon wafers in pure and surfactant added TMAH. | |||||
言語 | en | |||||
内容記述タイプ | Abstract | |||||
出版者 | ||||||
言語 | en | |||||
出版者 | IEEE | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプresource | http://purl.org/coar/resource_type/c_6501 | |||||
タイプ | journal article | |||||
出版タイプ | ||||||
出版タイプ | VoR | |||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
DOI | ||||||
関連タイプ | isVersionOf | |||||
識別子タイプ | DOI | |||||
関連識別子 | https://doi.org/10.1109/MEMSYS.2008.4443659 | |||||
ISBN | ||||||
関連タイプ | isPartOf | |||||
識別子タイプ | ISBN | |||||
関連識別子 | 978-1-4244-1793-3 | |||||
書誌情報 |
en : IEEE 21st International Conference on Micro Electro Mechanical Systems (MEMS 2008) p. 327-330, 発行日 2008-01 |
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フォーマット | ||||||
application/pdf | ||||||
著者版フラグ | ||||||
値 | publisher | |||||
URI | ||||||
識別子 | http://hdl.handle.net/2237/11137 | |||||
識別子タイプ | HDL |