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  1. B200 工学部/工学研究科
  2. B200e 会議資料
  3. 国際会議

An improved anisotropic wet etching process for the fabrication of silicon MEMS structures using a single etching mask

http://hdl.handle.net/2237/11137
http://hdl.handle.net/2237/11137
5d762413-5786-460c-a677-e7c6d7b8513d
名前 / ファイル ライセンス アクション
08_MEMS_Prem.pdf 08_MEMS_Prem.pdf (1.3 MB)
Item type 学術雑誌論文 / Journal Article(1)
公開日 2009-02-23
タイトル
タイトル An improved anisotropic wet etching process for the fabrication of silicon MEMS structures using a single etching mask
言語 en
著者 Pal, P.

× Pal, P.

WEKO 26774

en Pal, P.

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Sato, K.

× Sato, K.

WEKO 26775

en Sato, K.

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Gosalvez, M.A.

× Gosalvez, M.A.

WEKO 26776

en Gosalvez, M.A.

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Shikida, M.

× Shikida, M.

WEKO 26777

en Shikida, M.

Search repository
佐藤, 一雄

× 佐藤, 一雄

WEKO 26778

ja 佐藤, 一雄

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アクセス権
アクセス権 open access
アクセス権URI http://purl.org/coar/access_right/c_abf2
権利
言語 en
権利情報 Copyright © 2008 IEEE. Reprinted from IEEE 21st International Conference on Micro Electro Mechanical Systems, 2008, MEMS, p.327-330. This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of Nagoya University’s products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to pubs-permissions@ieee.org.
抄録
内容記述 We have developed an improved anisotropic wet etching process for the fabrication of various silicon microstructures with rounded concave and sharp convex corners, grooves for chip isolation, meandering microfluidic channels, mesa structures with bent V-grooves, and 45º mirrors with highly smooth surface finish by using a single etching mask on (100) wafers. In this work, we use a CMOS compatible anisotropic etchant containing tetramethyl ammonium hydroxide (TMAH) and a small amount (0.1% v/v) of a non-ionic surfactant (NC-200), containing 100% polyoxyethylene-alkylphenyl-ether. The process has been developed by analyzing the etching characteristics of (100) silicon wafers in pure and surfactant added TMAH.
言語 en
内容記述タイプ Abstract
出版者
言語 en
出版者 IEEE
言語
言語 eng
資源タイプ
資源タイプresource http://purl.org/coar/resource_type/c_6501
タイプ journal article
出版タイプ
出版タイプ VoR
出版タイプResource http://purl.org/coar/version/c_970fb48d4fbd8a85
DOI
関連タイプ isVersionOf
識別子タイプ DOI
関連識別子 https://doi.org/10.1109/MEMSYS.2008.4443659
ISBN
関連タイプ isPartOf
識別子タイプ ISBN
関連識別子 978-1-4244-1793-3
書誌情報 en : IEEE 21st International Conference on Micro Electro Mechanical Systems (MEMS 2008)

p. 327-330, 発行日 2008-01
フォーマット
application/pdf
著者版フラグ
値 publisher
URI
識別子 http://hdl.handle.net/2237/11137
識別子タイプ HDL
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