{"created":"2021-03-01T06:16:07.552913+00:00","id":9362,"links":{},"metadata":{"_buckets":{"deposit":"ae95804f-a728-4b0c-a17c-d634f22a8911"},"_deposit":{"id":"9362","owners":[],"pid":{"revision_id":0,"type":"depid","value":"9362"},"status":"published"},"_oai":{"id":"oai:nagoya.repo.nii.ac.jp:00009362","sets":["320:502:503"]},"author_link":["26774","26775","26776","26777","26778"],"item_10_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2008-01","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"330","bibliographicPageStart":"327","bibliographic_titles":[{"bibliographic_title":"IEEE 21st International Conference on Micro Electro Mechanical Systems (MEMS 2008)","bibliographic_titleLang":"en"}]}]},"item_10_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"We have developed an improved anisotropic wet etching process for the fabrication of various silicon microstructures with rounded concave and sharp convex corners, grooves for chip isolation, meandering microfluidic channels, mesa structures with bent V-grooves, and 45º mirrors with highly smooth surface finish by using a single etching mask on (100) wafers. In this work, we use a CMOS compatible anisotropic etchant containing tetramethyl ammonium hydroxide (TMAH) and a small amount (0.1% v/v) of a non-ionic surfactant (NC-200), containing 100% polyoxyethylene-alkylphenyl-ether. The process has been developed by analyzing the etching characteristics of (100) silicon wafers in pure and surfactant added TMAH.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10_identifier_60":{"attribute_name":"URI","attribute_value_mlt":[{"subitem_identifier_type":"HDL","subitem_identifier_uri":"http://hdl.handle.net/2237/11137"}]},"item_10_publisher_32":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"IEEE","subitem_publisher_language":"en"}]},"item_10_relation_11":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.1109/MEMSYS.2008.4443659","subitem_relation_type_select":"DOI"}}]},"item_10_relation_8":{"attribute_name":"ISBN","attribute_value_mlt":[{"subitem_relation_type":"isPartOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"978-1-4244-1793-3","subitem_relation_type_select":"ISBN"}}]},"item_10_rights_12":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"Copyright © 2008 IEEE. Reprinted from IEEE 21st International Conference on Micro Electro Mechanical Systems, 2008, MEMS, p.327-330. This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of Nagoya University’s products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to pubs-permissions@ieee.org.","subitem_rights_language":"en"}]},"item_10_select_15":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_select_item":"publisher"}]},"item_10_text_14":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_text_value":"application/pdf"}]},"item_1615787544753":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"open access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_abf2"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Pal, P.","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"26774","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Sato, K.","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"26775","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Gosalvez, M.A.","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"26776","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Shikida, M.","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"26777","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"佐藤, 一雄","creatorNameLang":"ja"}],"nameIdentifiers":[{"nameIdentifier":"26778","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2018-02-20"}],"displaytype":"detail","filename":"08_MEMS_Prem.pdf","filesize":[{"value":"1.3 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"08_MEMS_Prem.pdf","objectType":"fulltext","url":"https://nagoya.repo.nii.ac.jp/record/9362/files/08_MEMS_Prem.pdf"},"version_id":"a98a64e3-d570-4072-8363-3b6fb6108c30"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"An improved anisotropic wet etching process for the fabrication of silicon MEMS structures using a single etching mask","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"An improved anisotropic wet etching process for the fabrication of silicon MEMS structures using a single etching mask","subitem_title_language":"en"}]},"item_type_id":"10","owner":"1","path":["503"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2009-02-23"},"publish_date":"2009-02-23","publish_status":"0","recid":"9362","relation_version_is_last":true,"title":["An improved anisotropic wet etching process for the fabrication of silicon MEMS structures using a single etching mask"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-01-16T03:54:59.781004+00:00"}