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Mechanical characterization of SiC film at high temperatures by tensile test
http://hdl.handle.net/2237/11140
52c41c09-1cf8-48fe-8d00-df81a9b75158
名前 / ファイル | ライセンス | アクション | |
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2009-02-23 | |||||
タイトル | ||||||
タイトル | Mechanical characterization of SiC film at high temperatures by tensile test | |||||
著者 |
Nakao, S.
× Nakao, S.× Ando, T.× Chen, L.× Mehregany, M.× Sato, K.× 佐藤, 一雄 |
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権利 | ||||||
権利情報 | Copyright © 2008 IEEE. Reprinted from IEEE 21st International Conference on Micro Electro Mechanical Systems, 2008, MEMS, p.447-450. This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of Nagoya University’s products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to pubs-permissions@ieee.org. | |||||
抄録 | ||||||
内容記述 | This paper reports the mechanical properties of silicon carbide (SiC) films at elevated temperatures up to 500ºC. Poly-crystalline SiC film (poly-SiC) was deposited by LPCVD on a silicon wafer and patterned into a freestanding specimen on an “on-chip” tensile test device. The fracture strength of poly-SiC films showed little temperature dependence over the test temperature range. The tensile strength was 2.89 GPa at room temperature (RT), and decreased slightly to 2.66 GPa at 500ºC. The fracture surface at 500ºC showed almost the same morphology as that at RT, without any slippage. The potential of SiC films as a material for micromechanical devices working at high temperatures has been heretofore confirmed. | |||||
内容記述タイプ | Abstract | |||||
出版者 | ||||||
出版者 | IEEE | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプresource | http://purl.org/coar/resource_type/c_6501 | |||||
タイプ | journal article | |||||
DOI | ||||||
関連識別子 | ||||||
識別子タイプ | DOI | |||||
関連識別子 | http://doi.org/10.1109/MEMSYS.2008.4443689 | |||||
ISBN | ||||||
関連識別子 | ||||||
識別子タイプ | ISBN | |||||
関連識別子 | 978-1-4244-1793-3 | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 1084-6999 | |||||
書誌情報 |
IEEE 21st International Conference on Micro Electro Mechanical Systems (MEMS 2008) p. 447-450, 発行日 2008-01 |
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フォーマット | ||||||
application/pdf | ||||||
著者版フラグ | ||||||
値 | publisher | |||||
URI | ||||||
識別子 | http://hdl.handle.net/2237/11140 | |||||
識別子タイプ | HDL |