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{"_buckets": {"deposit": "5577e314-630a-43fc-9d1c-d02b163a3d43"}, "_deposit": {"id": "9366", "owners": [], "pid": {"revision_id": 0, "type": "depid", "value": "9366"}, "status": "published"}, "_oai": {"id": "oai:nagoya.repo.nii.ac.jp:00009366"}, "item_10_biblio_info_6": {"attribute_name": "\u66f8\u8a8c\u60c5\u5831", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2008-01", "bibliographicIssueDateType": "Issued"}, "bibliographicPageEnd": "450", "bibliographicPageStart": "447", "bibliographic_titles": [{"bibliographic_title": "IEEE 21st International Conference on Micro Electro Mechanical Systems (MEMS 2008)"}]}]}, "item_10_description_4": {"attribute_name": "\u6284\u9332", "attribute_value_mlt": [{"subitem_description": "This paper reports the mechanical properties of silicon carbide (SiC) films at elevated temperatures up to 500\u00baC. Poly-crystalline SiC film (poly-SiC) was deposited by LPCVD on a silicon wafer and patterned into a freestanding specimen on an \u201con-chip\u201d tensile test device. The fracture strength of poly-SiC films showed little temperature dependence over the test temperature range. The tensile strength was 2.89 GPa at room temperature (RT), and decreased slightly to 2.66 GPa at 500\u00baC. The fracture surface at 500\u00baC showed almost the same morphology as that at RT, without any slippage. The potential of SiC films as a material for micromechanical devices working at high temperatures has been heretofore confirmed.", "subitem_description_type": "Abstract"}]}, "item_10_identifier_60": {"attribute_name": "URI", "attribute_value_mlt": [{"subitem_identifier_type": "HDL", "subitem_identifier_uri": "http://hdl.handle.net/2237/11140"}]}, "item_10_publisher_32": {"attribute_name": "\u51fa\u7248\u8005", "attribute_value_mlt": [{"subitem_publisher": "IEEE"}]}, "item_10_relation_11": {"attribute_name": "DOI", "attribute_value_mlt": [{"subitem_relation_type_id": {"subitem_relation_type_id_text": "http://doi.org/10.1109/MEMSYS.2008.4443689", "subitem_relation_type_select": "DOI"}}]}, "item_10_relation_8": {"attribute_name": "ISBN", "attribute_value_mlt": [{"subitem_relation_type_id": {"subitem_relation_type_id_text": "978-1-4244-1793-3", "subitem_relation_type_select": "ISBN"}}]}, "item_10_rights_12": {"attribute_name": "\u6a29\u5229", "attribute_value_mlt": [{"subitem_rights": "Copyright \u00a9 2008 IEEE. Reprinted from IEEE 21st International Conference on Micro Electro Mechanical Systems, 2008, MEMS, p.447-450. This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of Nagoya University\u2019s products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to pubs-permissions@ieee.org."}]}, "item_10_select_15": {"attribute_name": "\u8457\u8005\u7248\u30d5\u30e9\u30b0", "attribute_value_mlt": [{"subitem_select_item": "publisher"}]}, "item_10_source_id_7": {"attribute_name": "ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "1084-6999", "subitem_source_identifier_type": "ISSN"}]}, "item_10_text_14": {"attribute_name": "\u30d5\u30a9\u30fc\u30de\u30c3\u30c8", "attribute_value_mlt": [{"subitem_text_value": "application/pdf"}]}, "item_creator": {"attribute_name": "\u8457\u8005", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Nakao, S."}], "nameIdentifiers": [{"nameIdentifier": "26795", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Ando, T."}], "nameIdentifiers": [{"nameIdentifier": "26796", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Chen, L."}], "nameIdentifiers": [{"nameIdentifier": "26797", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Mehregany, M."}], "nameIdentifiers": [{"nameIdentifier": "26798", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Sato, K."}], "nameIdentifiers": [{"nameIdentifier": "26799", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "\u4f50\u85e4, \u4e00\u96c4"}], "nameIdentifiers": [{"nameIdentifier": "26800", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "\u30d5\u30a1\u30a4\u30eb\u60c5\u5831", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2018-02-20"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "08_MEMS_Nakao.pdf", "filesize": [{"value": "393.1 kB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_free", "mimetype": "application/pdf", "size": 393100.0, "url": {"label": "08_MEMS_Nakao.pdf", "url": "https://nagoya.repo.nii.ac.jp/record/9366/files/08_MEMS_Nakao.pdf"}, "version_id": "10dbe0cf-c4e2-4fc6-b04c-6620de3ba0b2"}]}, "item_language": {"attribute_name": "\u8a00\u8a9e", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "\u8cc7\u6e90\u30bf\u30a4\u30d7", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Mechanical characterization of SiC film at high temperatures by tensile test", "item_titles": {"attribute_name": "\u30bf\u30a4\u30c8\u30eb", "attribute_value_mlt": [{"subitem_title": "Mechanical characterization of SiC film at high temperatures by tensile test"}]}, "item_type_id": "10", "owner": "1", "path": ["320/502/503"], "permalink_uri": "http://hdl.handle.net/2237/11140", "pubdate": {"attribute_name": "\u516c\u958b\u65e5", "attribute_value": "2009-02-23"}, "publish_date": "2009-02-23", "publish_status": "0", "recid": "9366", "relation": {}, "relation_version_is_last": true, "title": ["Mechanical characterization of SiC film at high temperatures by tensile test"], "weko_shared_id": 3}
  1. B200 工学部/工学研究科
  2. B200e 会議資料
  3. 国際会議

Mechanical characterization of SiC film at high temperatures by tensile test

http://hdl.handle.net/2237/11140
52c41c09-1cf8-48fe-8d00-df81a9b75158
名前 / ファイル ライセンス アクション
08_MEMS_Nakao.pdf 08_MEMS_Nakao.pdf (393.1 kB)
Item type 学術雑誌論文 / Journal Article(1)
公開日 2009-02-23
タイトル
タイトル Mechanical characterization of SiC film at high temperatures by tensile test
著者 Nakao, S.

× Nakao, S.

WEKO 26795

Nakao, S.

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Ando, T.

× Ando, T.

WEKO 26796

Ando, T.

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Chen, L.

× Chen, L.

WEKO 26797

Chen, L.

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Mehregany, M.

× Mehregany, M.

WEKO 26798

Mehregany, M.

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Sato, K.

× Sato, K.

WEKO 26799

Sato, K.

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佐藤, 一雄

× 佐藤, 一雄

WEKO 26800

佐藤, 一雄

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権利
権利情報 Copyright © 2008 IEEE. Reprinted from IEEE 21st International Conference on Micro Electro Mechanical Systems, 2008, MEMS, p.447-450. This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of Nagoya University’s products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to pubs-permissions@ieee.org.
抄録
内容記述 This paper reports the mechanical properties of silicon carbide (SiC) films at elevated temperatures up to 500ºC. Poly-crystalline SiC film (poly-SiC) was deposited by LPCVD on a silicon wafer and patterned into a freestanding specimen on an “on-chip” tensile test device. The fracture strength of poly-SiC films showed little temperature dependence over the test temperature range. The tensile strength was 2.89 GPa at room temperature (RT), and decreased slightly to 2.66 GPa at 500ºC. The fracture surface at 500ºC showed almost the same morphology as that at RT, without any slippage. The potential of SiC films as a material for micromechanical devices working at high temperatures has been heretofore confirmed.
内容記述タイプ Abstract
出版者
出版者 IEEE
言語
言語 eng
資源タイプ
資源タイプresource http://purl.org/coar/resource_type/c_6501
タイプ journal article
DOI
関連識別子
識別子タイプ DOI
関連識別子 http://doi.org/10.1109/MEMSYS.2008.4443689
ISBN
関連識別子
識別子タイプ ISBN
関連識別子 978-1-4244-1793-3
ISSN
収録物識別子タイプ ISSN
収録物識別子 1084-6999
書誌情報 IEEE 21st International Conference on Micro Electro Mechanical Systems (MEMS 2008)

p. 447-450, 発行日 2008-01
フォーマット
application/pdf
著者版フラグ
値 publisher
URI
識別子 http://hdl.handle.net/2237/11140
識別子タイプ HDL
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