{"_buckets": {"deposit": "5577e314-630a-43fc-9d1c-d02b163a3d43"}, "_deposit": {"id": "9366", "owners": [], "pid": {"revision_id": 0, "type": "depid", "value": "9366"}, "status": "published"}, "_oai": {"id": "oai:nagoya.repo.nii.ac.jp:00009366"}, "item_10_biblio_info_6": {"attribute_name": "\u66f8\u8a8c\u60c5\u5831", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2008-01", "bibliographicIssueDateType": "Issued"}, "bibliographicPageEnd": "450", "bibliographicPageStart": "447", "bibliographic_titles": [{"bibliographic_title": "IEEE 21st International Conference on Micro Electro Mechanical Systems (MEMS 2008)"}]}]}, "item_10_description_4": {"attribute_name": "\u6284\u9332", "attribute_value_mlt": [{"subitem_description": "This paper reports the mechanical properties of silicon carbide (SiC) films at elevated temperatures up to 500\u00baC. Poly-crystalline SiC film (poly-SiC) was deposited by LPCVD on a silicon wafer and patterned into a freestanding specimen on an \u201con-chip\u201d tensile test device. The fracture strength of poly-SiC films showed little temperature dependence over the test temperature range. The tensile strength was 2.89 GPa at room temperature (RT), and decreased slightly to 2.66 GPa at 500\u00baC. The fracture surface at 500\u00baC showed almost the same morphology as that at RT, without any slippage. The potential of SiC films as a material for micromechanical devices working at high temperatures has been heretofore confirmed.", "subitem_description_type": "Abstract"}]}, "item_10_identifier_60": {"attribute_name": "URI", "attribute_value_mlt": [{"subitem_identifier_type": "HDL", "subitem_identifier_uri": "http://hdl.handle.net/2237/11140"}]}, "item_10_publisher_32": {"attribute_name": "\u51fa\u7248\u8005", "attribute_value_mlt": [{"subitem_publisher": "IEEE"}]}, "item_10_relation_11": {"attribute_name": "DOI", "attribute_value_mlt": [{"subitem_relation_type_id": {"subitem_relation_type_id_text": "http://doi.org/10.1109/MEMSYS.2008.4443689", "subitem_relation_type_select": "DOI"}}]}, "item_10_relation_8": {"attribute_name": "ISBN", "attribute_value_mlt": [{"subitem_relation_type_id": {"subitem_relation_type_id_text": "978-1-4244-1793-3", "subitem_relation_type_select": "ISBN"}}]}, "item_10_rights_12": {"attribute_name": "\u6a29\u5229", "attribute_value_mlt": [{"subitem_rights": "Copyright \u00a9 2008 IEEE. Reprinted from IEEE 21st International Conference on Micro Electro Mechanical Systems, 2008, MEMS, p.447-450. This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of Nagoya University\u2019s products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to pubs-permissions@ieee.org."}]}, "item_10_select_15": {"attribute_name": "\u8457\u8005\u7248\u30d5\u30e9\u30b0", "attribute_value_mlt": [{"subitem_select_item": "publisher"}]}, "item_10_source_id_7": {"attribute_name": "ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "1084-6999", "subitem_source_identifier_type": "ISSN"}]}, "item_10_text_14": {"attribute_name": "\u30d5\u30a9\u30fc\u30de\u30c3\u30c8", "attribute_value_mlt": [{"subitem_text_value": "application/pdf"}]}, "item_creator": {"attribute_name": "\u8457\u8005", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Nakao, S."}], "nameIdentifiers": [{"nameIdentifier": "26795", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Ando, T."}], "nameIdentifiers": [{"nameIdentifier": "26796", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Chen, L."}], "nameIdentifiers": [{"nameIdentifier": "26797", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Mehregany, M."}], "nameIdentifiers": [{"nameIdentifier": "26798", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Sato, K."}], "nameIdentifiers": [{"nameIdentifier": "26799", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "\u4f50\u85e4, \u4e00\u96c4"}], "nameIdentifiers": [{"nameIdentifier": "26800", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "\u30d5\u30a1\u30a4\u30eb\u60c5\u5831", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2018-02-20"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "08_MEMS_Nakao.pdf", "filesize": [{"value": "393.1 kB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_free", "mimetype": "application/pdf", "size": 393100.0, "url": {"label": "08_MEMS_Nakao.pdf", "url": "https://nagoya.repo.nii.ac.jp/record/9366/files/08_MEMS_Nakao.pdf"}, "version_id": "10dbe0cf-c4e2-4fc6-b04c-6620de3ba0b2"}]}, "item_language": {"attribute_name": "\u8a00\u8a9e", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "\u8cc7\u6e90\u30bf\u30a4\u30d7", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Mechanical characterization of SiC film at high temperatures by tensile test", "item_titles": {"attribute_name": "\u30bf\u30a4\u30c8\u30eb", "attribute_value_mlt": [{"subitem_title": "Mechanical characterization of SiC film at high temperatures by tensile test"}]}, "item_type_id": "10", "owner": "1", "path": ["320/502/503"], "permalink_uri": "http://hdl.handle.net/2237/11140", "pubdate": {"attribute_name": "\u516c\u958b\u65e5", "attribute_value": "2009-02-23"}, "publish_date": "2009-02-23", "publish_status": "0", "recid": "9366", "relation": {}, "relation_version_is_last": true, "title": ["Mechanical characterization of SiC film at high temperatures by tensile test"], "weko_shared_id": 3}