@article{oai:nagoya.repo.nii.ac.jp:00009366,
 author = {Nakao, S. and Ando, T. and Chen, L. and Mehregany, M. and Sato, K. and 佐藤, 一雄},
 journal = {IEEE 21st International Conference on Micro Electro Mechanical Systems (MEMS 2008)},
 month = {Jan},
 note = {This paper reports the mechanical properties of silicon carbide (SiC) films at elevated temperatures up to 500ºC. Poly-crystalline SiC film (poly-SiC) was deposited by LPCVD on a silicon wafer and patterned into a freestanding specimen on an “on-chip” tensile test device. The fracture strength of poly-SiC films showed little temperature dependence over the test temperature range. The tensile strength was 2.89 GPa at room temperature (RT), and decreased slightly to 2.66 GPa at 500ºC. The fracture surface at 500ºC showed almost the same morphology as that at RT, without any slippage. The potential of SiC films as a material for micromechanical devices working at high temperatures has been heretofore confirmed.},
 pages = {447--450},
 title = {Mechanical characterization of SiC film at high temperatures by tensile test},
 year = {2008}
}