{"created":"2021-03-01T06:16:14.042937+00:00","id":9464,"links":{},"metadata":{"_buckets":{"deposit":"7bfe14bd-c4f5-434a-b365-188ad864b4ec"},"_deposit":{"id":"9464","owners":[],"pid":{"revision_id":0,"type":"depid","value":"9464"},"status":"published"},"_oai":{"id":"oai:nagoya.repo.nii.ac.jp:00009464","sets":["320:321:322"]},"author_link":["26978","26979","26980","26981","26982","26983","26984","26985"],"item_10_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2008-12","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"24","bibliographicPageEnd":"245316","bibliographicPageStart":"245316","bibliographicVolumeNumber":"78","bibliographic_titles":[{"bibliographic_title":"PHYSICAL REVIEW B","bibliographic_titleLang":"en"}]}]},"item_10_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Spin polarization of the tunnel conductivity has been studied for Fe/GaAs junctions with Schottky barriers.It is shown that band matching of resonant interface states within the Schottky barrier defines the sign of spin polarization of electrons transported through the barrier. The results account very well for experimental results including the tunneling of photoexcited electrons and suggest that the spin polarization (from −100% to 100%) is dependent on the Schottky barrier height. They also suggest that the sign of the spin polarization can be controlled with a bias voltage.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10_identifier_60":{"attribute_name":"URI","attribute_value_mlt":[{"subitem_identifier_type":"HDL","subitem_identifier_uri":"http://hdl.handle.net/2237/11246"}]},"item_10_publisher_32":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"American Physical Society","subitem_publisher_language":"en"}]},"item_10_relation_11":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.1103/PhysRevB.78.245316","subitem_relation_type_select":"DOI"}}]},"item_10_rights_12":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"Copyright: American Physical Society, All rights reserved.","subitem_rights_language":"en"}]},"item_10_select_15":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_select_item":"publisher"}]},"item_10_source_id_7":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"1098-0121","subitem_source_identifier_type":"PISSN"}]},"item_10_text_14":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_text_value":"application/pdf"}]},"item_1615787544753":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"open access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_abf2"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Honda, S.","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"26978","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Itoh, H.","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"26979","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Inoue, J.","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"26980","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Kurebayashi, H.","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"26981","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Trypiniotis, T.","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"26982","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Barnes, C. H. W.","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"26983","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Hirohata, A.","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"26984","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Bland, J. A. C.","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"26985","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2018-02-20"}],"displaytype":"detail","filename":"245316.pdf","filesize":[{"value":"796.0 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"245316.pdf","objectType":"fulltext","url":"https://nagoya.repo.nii.ac.jp/record/9464/files/245316.pdf"},"version_id":"8f60e26f-0331-418f-87de-b8eb45101fd9"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"electron spin polarisation","subitem_subject_scheme":"Other"},{"subitem_subject":"gallium arsenide","subitem_subject_scheme":"Other"},{"subitem_subject":"III-V semiconductors","subitem_subject_scheme":"Other"},{"subitem_subject":"iron","subitem_subject_scheme":"Other"},{"subitem_subject":"Schottky barriers","subitem_subject_scheme":"Other"},{"subitem_subject":"tunnelling","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Spin polarization control through resonant states in an Fe/GaAs Schottky barrier","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Spin polarization control through resonant states in an Fe/GaAs Schottky barrier","subitem_title_language":"en"}]},"item_type_id":"10","owner":"1","path":["322"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2009-03-06"},"publish_date":"2009-03-06","publish_status":"0","recid":"9464","relation_version_is_last":true,"title":["Spin polarization control through resonant states in an Fe/GaAs Schottky barrier"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-01-16T03:55:05.977204+00:00"}