{"created":"2021-03-01T06:16:33.667776+00:00","id":9773,"links":{},"metadata":{"_buckets":{"deposit":"b3494027-4359-4456-8e97-2192eb82cf25"},"_deposit":{"id":"9773","owners":[],"pid":{"revision_id":0,"type":"depid","value":"9773"},"status":"published"},"_oai":{"id":"oai:nagoya.repo.nii.ac.jp:00009773","sets":["320:606:607"]},"author_link":["29467"],"item_12_alternative_title_19":{"attribute_name":"その他のタイトル","attribute_value_mlt":[{"subitem_alternative_title":"VHF容量結合プラズマ中の中性ラジカルにおける励起周波数の効果に関する研究","subitem_alternative_title_language":"ja"}]},"item_12_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2004-03-25","bibliographicIssueDateType":"Issued"}}]},"item_12_date_granted_64":{"attribute_name":"学位授与年月日","attribute_value_mlt":[{"subitem_dategranted":"2004-03-25"}]},"item_12_degree_grantor_62":{"attribute_name":"学位授与機関","attribute_value_mlt":[{"subitem_degreegrantor":[{"subitem_degreegrantor_language":"ja","subitem_degreegrantor_name":"名古屋大学"},{"subitem_degreegrantor_language":"en","subitem_degreegrantor_name":"Nagoya University"}],"subitem_degreegrantor_identifier":[{"subitem_degreegrantor_identifier_name":"13901","subitem_degreegrantor_identifier_scheme":"kakenhi"}]}]},"item_12_degree_name_61":{"attribute_name":"学位名","attribute_value_mlt":[{"subitem_degreename":"博士(工学)","subitem_degreename_language":"ja"}]},"item_12_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"The effect of the excitation frequency on the neutral radical and the contribution to the film deposition in VHF-CCP was investigated in this thesis.  In chapter 1, the trend of the excitation frequency was shown as an introduction.  The importance of the radical temperature in plasma processing and the purpose of this thesis were also described.  In chapter 2, the experimental apparatus and UVAS, IRLAS, LIF, AOES, wave diagnostics, double probe technique, and pyrometer for the diagnostic techniques plasma were described. In chapter 3, the densities of the Si, SiF and SiF_2 radical and SiF_4 molecule in VHF 60 MHz CCP employing SiF_4 gas were measured as a function of N_e using LIF, IRLAS and UVAS techniques.  The behavior of their radicals and the SiF_4 molecule was characterized using an internal plasma parameter of N_e. The SiF_4 density decreased with increasing  N_e and the dissociation ratio of SiF_4 was saturated at about 63% at N_e of 8.7×10^10cm^{-3}.  SiF_2 radical density decreased while Si and SiF densities increased with increasing N_e about 1.2×10^11cm^{-3}.  The SiF_2 radical is mainly produced by the electron impact dissociation of SiF_4 and extinguished by the diffusion to the wall at the N_e below 1.2×10^11cm^{-3} and by the electron impact dissociation at N_e above 1.2×10^11cm^{-3}. SiF radical density increased linearly with increasing N_e. The SiF radical is mainly produced by the electron impact dissociation of the SiF_4 molecule and extinguished by the reaction with the SiF_4 molecule.  The total density of the Si atom was estimated to be of the order of 10^10-10^11cm^{-3}. The atom is mainly produced by the electron impact dissociation of SiF_4 molecule at N_e below 1.0×10^11 cm^{-3} and by the electron impact dissociation of SiF_x (x=1-3) radicals in addition to the SiF_4 molecule at the N_e above 1.0×10^11 cm^{-3}. The kinetics of species in SiF_4 plasma has been clarified quantitatively. The spatial distribution of SiF, SiF_2 and SiF_4 densities was also measured by LIF and IRLAS, showing an almost flat distribution inside the plasma region.  The result indicated VHF-CCP had an advantage for large area process within above 8-inch diameter. In chapter 4, UVAS techniques employing a ring dye laser and a hollow cathode lamp were applied to investigate the effect of the excitation frequency on the density and the translational temperature of the Si atom in VHF-CCP VHF at 27MHz or 60MHz employing a SiF_4 gas.  The translational temperature of the Si atom was very high at the same N_e, especially above 1060 K at 27 MHz, and this was explained by the Frank-Condon effect and the hot Si atom is created due to the difference of energy of Si atom produced from the electron impact dissociation of SiF_x (x=1-3)radicals and SiF_4 molecules. In chapter 5, the behaviors of absolute densities and translational of Si atoms in VHF SiH_4 CCP with Ar, N_2, and H_2 dilution gases were measured by UVAS employing a ring dye laser and a hollow cathode lamp.  Si atoms were mainly produced by the electron impact dissociation of SiH_4 molecules, and extinguished by the reaction with the SiH_4 molecules and the diffusion.  However, the Si atoms at the 27 MHz plasmas were produced more from radicals such as SiH_x(x=1-3) radicals than SiH_4 molecules by the electron impact dissociation in comparison with 60MHz plasmas.  It is found that the Si atom heating was due to the energy of Si atoms released from the electron impact dissociation of SiH_x(x=1-4). The temperatures at 27MHz were larger than that at 60MHz and the temperatures increased with increasing SiH_4 flow rate ratio. The temperatures in the SiH_4/Ar, SiH_4/N_2, and SiH_4/H_2 27MHz plasmas were estimated to be 970, 1030, and 1130 K, respectively. In chapter 6, the effect of the excitation frequency for the contribution of the deposition film was estimated.  The contribution ratio of Si/SiH_3 ratio decreased with increasing the excitation frequency.  The SiN film deposited at 60MHz became nitride-rich composition more than at 27MHz because of the low ratio of Si/SiH_3. Therefore, the contribution of the radicals to the film composition is changed with increasing the excitation frequency.  It is indicated that increasing the excitation frequency has the advantages for obtaining the high-quality films and controlling the plasma chemistry.  These results are very important from the viewpoint of diagnostics of plasma chemistries and important information to control film deposition.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_12_description_5":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"名古屋大学博士学位論文 学位の種類:博士(工学) (課程) 学位授与年月日:平成16年3月25日","subitem_description_language":"ja","subitem_description_type":"Other"}]},"item_12_dissertation_number_65":{"attribute_name":"学位授与番号","attribute_value_mlt":[{"subitem_dissertationnumber":"甲第6268号"}]},"item_12_identifier_60":{"attribute_name":"URI","attribute_value_mlt":[{"subitem_identifier_type":"HDL","subitem_identifier_uri":"http://hdl.handle.net/2237/11573"}]},"item_12_select_15":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_select_item":"publisher"}]},"item_12_text_14":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_text_value":"application/pdf"}]},"item_12_text_63":{"attribute_name":"学位授与年度","attribute_value_mlt":[{"subitem_text_value":"2003"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"open access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_abf2"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Ohta, Takayuki","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"29467","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2018-02-20"}],"displaytype":"detail","filename":"ko6268.pdf","filesize":[{"value":"7.2 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"ko6268.pdf","objectType":"fulltext","url":"https://nagoya.repo.nii.ac.jp/record/9773/files/ko6268.pdf"},"version_id":"3378a30c-aab7-4716-8c38-64b68659c64a"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"doctoral thesis","resourceuri":"http://purl.org/coar/resource_type/c_db06"}]},"item_title":"Studies on effect of excitation frequency on neutral radicals in very high frequency capacitively coupled plasma","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Studies on effect of excitation frequency on neutral radicals in very high frequency capacitively coupled plasma","subitem_title_language":"en"}]},"item_type_id":"12","owner":"1","path":["607"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2009-04-24"},"publish_date":"2009-04-24","publish_status":"0","recid":"9773","relation_version_is_last":true,"title":["Studies on effect of excitation frequency on neutral radicals in very high frequency capacitively coupled plasma"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-01-16T04:01:16.865062+00:00"}