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Reduction of Mg segregation in a metalorganic vapor phase epitaxial grown GaN layer by a low-temperature AlN interlayer
http://hdl.handle.net/2237/12032
http://hdl.handle.net/2237/12032985b8de3-acaf-46b4-8472-8e2140ac734b
名前 / ファイル | ライセンス | アクション |
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JApplPhys_104_014906.pdf (302.8 kB)
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2009-08-17 | |||||
タイトル | ||||||
タイトル | Reduction of Mg segregation in a metalorganic vapor phase epitaxial grown GaN layer by a low-temperature AlN interlayer | |||||
言語 | en | |||||
著者 |
Tomita, Kazuyoshi
× Tomita, Kazuyoshi× Itoh, Kenji× Ishiguro, Osamu× Kachi, Tetsu× Sawaki, Nobuhiko |
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アクセス権 | ||||||
アクセス権 | open access | |||||
アクセス権URI | http://purl.org/coar/access_right/c_abf2 | |||||
権利 | ||||||
言語 | en | |||||
権利情報 | Copyright (2008) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. | |||||
抄録 | ||||||
内容記述 | The redistribution behavior of Mg in a sequentially regrown GaN epilayer on a p-type doped GaN template was studied. All samples in this study were regrown by metalorganic vapor phase epitaxy on the sapphire substrates. A high density and a slow tail of Mg concentration were observed in a nominally undoped layer due to the surface segregation. We found that the insertion of a low-temperature (LT) AlN interlayer was effective to suppress the Mg redistribution in the GaN regrown layer. Analyzing the temperature dependence of the surface segregation, the activation energy of the Mg segregation was estimated to be 0.63 eV in GaN and 2.47 eV in a LT-AlN layer, respectively. | |||||
言語 | en | |||||
内容記述タイプ | Abstract | |||||
出版者 | ||||||
言語 | en | |||||
出版者 | American Institite of Physics | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプresource | http://purl.org/coar/resource_type/c_6501 | |||||
タイプ | journal article | |||||
出版タイプ | ||||||
出版タイプ | VoR | |||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
DOI | ||||||
関連タイプ | isVersionOf | |||||
識別子タイプ | DOI | |||||
関連識別子 | https://doi.org/10.1063/1.2952051 | |||||
ISSN | ||||||
収録物識別子タイプ | PISSN | |||||
収録物識別子 | 0021-8979 | |||||
書誌情報 |
en : JOURNAL OF APPLIED PHYSICS 巻 104, p. 014906-014906, 発行日 2008-07-07 |
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フォーマット | ||||||
application/pdf | ||||||
著者版フラグ | ||||||
値 | publisher | |||||
URI | ||||||
識別子 | http://dx.doi.org/10.1063/1.2952051 | |||||
識別子タイプ | DOI | |||||
URI | ||||||
識別子 | http://hdl.handle.net/2237/12032 | |||||
識別子タイプ | HDL |