{"_buckets": {"deposit": "d1eed869-9f75-4842-9f88-6999676e61e8"}, "_deposit": {"id": "10212", "owners": [], "pid": {"revision_id": 0, "type": "depid", "value": "10212"}, "status": "published"}, "_oai": {"id": "oai:nagoya.repo.nii.ac.jp:00010212"}, "item_10_biblio_info_6": {"attribute_name": "\u66f8\u8a8c\u60c5\u5831", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2008-07-07", "bibliographicIssueDateType": "Issued"}, "bibliographicPageEnd": "014906", "bibliographicPageStart": "014906", "bibliographicVolumeNumber": "104", "bibliographic_titles": [{"bibliographic_title": "JOURNAL OF APPLIED PHYSICS"}]}]}, "item_10_description_4": {"attribute_name": "\u6284\u9332", "attribute_value_mlt": [{"subitem_description": "The redistribution behavior of Mg in a sequentially regrown GaN epilayer on a p-type doped GaN template was studied. All samples in this study were regrown by metalorganic vapor phase epitaxy on the sapphire substrates. A high density and a slow tail of Mg concentration were observed in a nominally undoped layer due to the surface segregation. We found that the insertion of a low-temperature (LT) AlN interlayer was effective to suppress the Mg redistribution in the GaN regrown layer. Analyzing the temperature dependence of the surface segregation, the activation energy of the Mg segregation was estimated to be 0.63 eV in GaN and 2.47 eV in a LT-AlN layer, respectively.", "subitem_description_type": "Abstract"}]}, "item_10_identifier_60": {"attribute_name": "URI", "attribute_value_mlt": [{"subitem_identifier_type": "DOI", "subitem_identifier_uri": "http://dx.doi.org/10.1063/1.2952051"}, {"subitem_identifier_type": "HDL", "subitem_identifier_uri": "http://hdl.handle.net/2237/12032"}]}, "item_10_publisher_32": {"attribute_name": "\u51fa\u7248\u8005", "attribute_value_mlt": [{"subitem_publisher": "American Institite of Physics"}]}, "item_10_rights_12": {"attribute_name": "\u6a29\u5229", "attribute_value_mlt": [{"subitem_rights": "Copyright (2008) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics."}]}, "item_10_select_15": {"attribute_name": "\u8457\u8005\u7248\u30d5\u30e9\u30b0", "attribute_value_mlt": [{"subitem_select_item": "publisher"}]}, "item_10_source_id_7": {"attribute_name": "ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "0021-8979", "subitem_source_identifier_type": "ISSN"}]}, "item_10_text_14": {"attribute_name": "\u30d5\u30a9\u30fc\u30de\u30c3\u30c8", "attribute_value_mlt": [{"subitem_text_value": "application/pdf"}]}, "item_creator": {"attribute_name": "\u8457\u8005", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Tomita, Kazuyoshi"}], "nameIdentifiers": [{"nameIdentifier": "30901", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Itoh, Kenji"}], "nameIdentifiers": [{"nameIdentifier": "30902", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Ishiguro, Osamu"}], "nameIdentifiers": [{"nameIdentifier": "30903", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Kachi, Tetsu"}], "nameIdentifiers": [{"nameIdentifier": "30904", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Sawaki, Nobuhiko"}], "nameIdentifiers": [{"nameIdentifier": "30905", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "\u30d5\u30a1\u30a4\u30eb\u60c5\u5831", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2018-02-20"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "JApplPhys_104_014906.pdf", "filesize": [{"value": "302.8 kB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_free", "mimetype": "application/pdf", "size": 302800.0, "url": {"label": "JApplPhys_104_014906.pdf", "url": "https://nagoya.repo.nii.ac.jp/record/10212/files/JApplPhys_104_014906.pdf"}, "version_id": "46ca610e-c5f9-49ec-82df-82f2d6afec48"}]}, "item_language": {"attribute_name": "\u8a00\u8a9e", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "\u8cc7\u6e90\u30bf\u30a4\u30d7", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Reduction of Mg segregation in a metalorganic vapor phase epitaxial grown GaN layer by a low-temperature AlN interlayer", "item_titles": {"attribute_name": "\u30bf\u30a4\u30c8\u30eb", "attribute_value_mlt": [{"subitem_title": "Reduction of Mg segregation in a metalorganic vapor phase epitaxial grown GaN layer by a low-temperature AlN interlayer"}]}, "item_type_id": "10", "owner": "1", "path": ["320/321/322"], "permalink_uri": "http://hdl.handle.net/2237/12032", "pubdate": {"attribute_name": "\u516c\u958b\u65e5", "attribute_value": "2009-08-17"}, "publish_date": "2009-08-17", "publish_status": "0", "recid": "10212", "relation": {}, "relation_version_is_last": true, "title": ["Reduction of Mg segregation in a metalorganic vapor phase epitaxial grown GaN layer by a low-temperature AlN interlayer"], "weko_shared_id": null}