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  1. B200 工学部/工学研究科
  2. B200a 雑誌掲載論文
  3. 学術雑誌

Reduction of Mg segregation in a metalorganic vapor phase epitaxial grown GaN layer by a low-temperature AlN interlayer

http://hdl.handle.net/2237/12032
http://hdl.handle.net/2237/12032
985b8de3-acaf-46b4-8472-8e2140ac734b
名前 / ファイル ライセンス アクション
JApplPhys_104_014906.pdf JApplPhys_104_014906.pdf (302.8 kB)
Item type 学術雑誌論文 / Journal Article(1)
公開日 2009-08-17
タイトル
タイトル Reduction of Mg segregation in a metalorganic vapor phase epitaxial grown GaN layer by a low-temperature AlN interlayer
言語 en
著者 Tomita, Kazuyoshi

× Tomita, Kazuyoshi

WEKO 30901

en Tomita, Kazuyoshi

Search repository
Itoh, Kenji

× Itoh, Kenji

WEKO 30902

en Itoh, Kenji

Search repository
Ishiguro, Osamu

× Ishiguro, Osamu

WEKO 30903

en Ishiguro, Osamu

Search repository
Kachi, Tetsu

× Kachi, Tetsu

WEKO 30904

en Kachi, Tetsu

Search repository
Sawaki, Nobuhiko

× Sawaki, Nobuhiko

WEKO 30905

en Sawaki, Nobuhiko

Search repository
アクセス権
アクセス権 open access
アクセス権URI http://purl.org/coar/access_right/c_abf2
権利
言語 en
権利情報 Copyright (2008) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
抄録
内容記述 The redistribution behavior of Mg in a sequentially regrown GaN epilayer on a p-type doped GaN template was studied. All samples in this study were regrown by metalorganic vapor phase epitaxy on the sapphire substrates. A high density and a slow tail of Mg concentration were observed in a nominally undoped layer due to the surface segregation. We found that the insertion of a low-temperature (LT) AlN interlayer was effective to suppress the Mg redistribution in the GaN regrown layer. Analyzing the temperature dependence of the surface segregation, the activation energy of the Mg segregation was estimated to be 0.63 eV in GaN and 2.47 eV in a LT-AlN layer, respectively.
言語 en
内容記述タイプ Abstract
出版者
言語 en
出版者 American Institite of Physics
言語
言語 eng
資源タイプ
資源タイプresource http://purl.org/coar/resource_type/c_6501
タイプ journal article
出版タイプ
出版タイプ VoR
出版タイプResource http://purl.org/coar/version/c_970fb48d4fbd8a85
DOI
関連タイプ isVersionOf
識別子タイプ DOI
関連識別子 https://doi.org/10.1063/1.2952051
ISSN
収録物識別子タイプ PISSN
収録物識別子 0021-8979
書誌情報 en : JOURNAL OF APPLIED PHYSICS

巻 104, p. 014906-014906, 発行日 2008-07-07
フォーマット
application/pdf
著者版フラグ
値 publisher
URI
識別子 http://dx.doi.org/10.1063/1.2952051
識別子タイプ DOI
URI
識別子 http://hdl.handle.net/2237/12032
識別子タイプ HDL
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