{"_buckets": {"deposit": "8d60d3c0-30dd-464c-a7ec-716a904b659b"}, "_deposit": {"id": "11212", "owners": [], "pid": {"revision_id": 0, "type": "depid", "value": "11212"}, "status": "published"}, "_oai": {"id": "oai:nagoya.repo.nii.ac.jp:00011212", "sets": ["1093"]}, "author_link": ["33931", "33932", "33933", "33934", "33935", "33936"], "item_1618209983323": {"attribute_name": "助成情報", "attribute_value_mlt": [{"subitem_award_numbers": {"subitem_award_number": "09355002", "subitem_award_uri": "https://kaken.nii.ac.jp/ja/grant/KAKENHI-PROJECT-09355002"}, "subitem_award_titles": [{"subitem_award_title": "UHF帯プラズマを用いた次世代大口径機能性薄膜プロセスの開発", "subitem_award_title_language": "ja"}], "subitem_funder_identifiers": {"subitem_funder_identifier": "https://doi.org/10.13039/501100001691", "subitem_funder_identifier_type": "Crossref Funder"}, "subitem_funder_names": [{"subitem_funder_name": "日本学術振興会", "subitem_funder_name_language": "ja"}]}]}, "item_19_biblio_info_6": {"attribute_name": "書誌情報", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2000-03", "bibliographicIssueDateType": "Issued"}}]}, "item_19_description_4": {"attribute_name": "抄録", "attribute_value_mlt": [{"subitem_description": "UHFプラズマの大口径機能性薄膜プロセスを開発するために,平成9年度から平成11年度に渡って,次世代の液晶ディスプレイデバイスのための大口径ガラス基板上への多結晶シリコン薄膜の低温堆積技術,ULSI用低誘電率薄膜形成技術について研究・開発を行い,下記の成果が得られた. 1.室温あるいは300℃の低温絶縁性基板上で,多結晶シリコン薄膜の結晶化率95%を達成した. また,薄膜初期成長過程の制御によりに基板界面に存在する非晶質シリコン中間層を6nm以下と極めて薄くすることにも成功した.これらの結果は,UHF帯プラズマ技術が多結晶薄膜トランジスタを実用化する上で極めて有望であることを示唆している. 2.薄膜形成機構を解明するために,赤外半導体レーザー吸収分光法によるラジカル計測を進めるとともに電子付着型質量分析法による高密度プラズマ中の高次ラジカル計測を実行し,低誘電率薄膜形成に重要なフルオロカーボン系プラズマ中の高次ラジカルの挙動をはじめて系統的に解明した. UHF帯シランプラズマ中のラジカルとして極めて重要な役割を果たしている水素原子の密度計測法としてマイクロホロー型真空紫外吸収分光法を確立し,プラズマ中の水素原子密度をはじめて明らかにした. 3.上記計測手法をUHF帯シランプラズマに応用し,Si原子と水素原子の計測結果から高品質多結晶シリコン薄膜の形成は,薄膜堆積時に入射するイオンエネルギーと堆積性ラジカルと水素原子とのバランスで決定されていることを解明した. 本研究によって得られたUHF帯プラズマによる高品質多結晶シリコン薄膜の低温形成プロセスの開発成果,種々のラジカルの計測法の確立と薄膜形成機構に関する学術的知見は,プラズマによる機能性薄膜の大口径形成のための新しい指針を呈示するものであり,次世代機能性薄膜プロセスを開発する上で極めて有用である.", "subitem_description_language": "ja", "subitem_description_type": "Abstract"}]}, "item_19_description_5": {"attribute_name": "内容記述", "attribute_value_mlt": [{"subitem_description": "科学研究費補助金 研究種目:基盤研究(A)(2) 課題番号:09355002 研究代表者:後藤 俊夫 研究期間:1997-1999年度", "subitem_description_language": "ja", "subitem_description_type": "Other"}]}, "item_19_identifier_60": {"attribute_name": "URI", "attribute_value_mlt": [{"subitem_identifier_type": "HDL", "subitem_identifier_uri": "http://hdl.handle.net/2237/13084"}]}, "item_19_relation_40": {"attribute_name": "シリーズ", "attribute_value_mlt": [{"subitem_relation_name": [{"subitem_relation_name_text": 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"09355002.pdf", "objectType": "fulltext", "url": "https://nagoya.repo.nii.ac.jp/record/11212/files/09355002.pdf"}, "version_id": "075c348f-7036-457c-9822-6cfd38903b17"}]}, "item_keyword": {"attribute_name": "キーワード", "attribute_value_mlt": [{"subitem_subject": "CVD", "subitem_subject_scheme": "Other"}, {"subitem_subject": "Large-scale", "subitem_subject_scheme": "Other"}, {"subitem_subject": "Plasma", "subitem_subject_scheme": "Other"}, {"subitem_subject": "Polycrystalline Silicon", "subitem_subject_scheme": "Other"}, {"subitem_subject": "Process", "subitem_subject_scheme": "Other"}, {"subitem_subject": "Radical", "subitem_subject_scheme": "Other"}, {"subitem_subject": "Si原子", "subitem_subject_scheme": "Other"}, {"subitem_subject": "Thin Film", "subitem_subject_scheme": "Other"}, {"subitem_subject": "UHF", "subitem_subject_scheme": "Other"}, {"subitem_subject": "アモルファスシリコン", "subitem_subject_scheme": "Other"}, {"subitem_subject": "プラズマ", "subitem_subject_scheme": "Other"}, {"subitem_subject": "プロセス", "subitem_subject_scheme": "Other"}, {"subitem_subject": "ラジカル", "subitem_subject_scheme": "Other"}, {"subitem_subject": "多結晶シリコン", "subitem_subject_scheme": "Other"}, {"subitem_subject": "大口径", "subitem_subject_scheme": "Other"}, {"subitem_subject": "薄膜", "subitem_subject_scheme": "Other"}]}, "item_language": {"attribute_name": "言語", "attribute_value_mlt": [{"subitem_language": "jpn"}]}, "item_resource_type": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"resourcetype": "research report", "resourceuri": "http://purl.org/coar/resource_type/c_18ws"}]}, "item_title": "UHF帯プラズマを用いた次世代大口径機能性薄膜プロセスの開発", "item_titles": {"attribute_name": "タイトル", "attribute_value_mlt": [{"subitem_title": "UHF帯プラズマを用いた次世代大口径機能性薄膜プロセスの開発", "subitem_title_language": "ja"}]}, "item_type_id": "19", "owner": "1", "path": ["1093"], "permalink_uri": "http://hdl.handle.net/2237/13084", "pubdate": {"attribute_name": "PubDate", "attribute_value": "2010-04-06"}, "publish_date": 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