{"_buckets": {"deposit": "d3a544f9-8321-4345-8fec-0d359feead38"}, "_deposit": {"id": "12063", "owners": [], "pid": {"revision_id": 0, "type": "depid", "value": "12063"}, "status": "published"}, "_oai": {"id": "oai:nagoya.repo.nii.ac.jp:00012063"}, "item_10_biblio_info_6": {"attribute_name": "\u66f8\u8a8c\u60c5\u5831", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2009-05-10", "bibliographicIssueDateType": "Issued"}, "bibliographicPageEnd": "58", "bibliographicPageStart": "55", "bibliographic_titles": [{"bibliographic_title": "IEEE International Conference on Indium Phosphide \u0026 Related Materials (IPRM \u002709)"}]}]}, "item_10_description_4": {"attribute_name": "\u6284\u9332", "attribute_value_mlt": [{"subitem_description": "Most of high performance III-V compound semiconductor devices are fabricated utilizing heterostructures. However, when the heterostructures are grown by OMVPE, a compositional grading arises at a hetero-interfaces. The compositional grading may deteriorate the performance of the compound semiconductor devices. We have investigated the degree of the compositional grading at the interfaces using X-ray crystal truncation rod (CTR) scattering measurement. The X-ray CTR scattering measurement is a powerful technique to investigate the buried interfaces and determine the distributions of atoms quantitatively at an atomic-scale. In this work, we studied on the distributions of group-III atoms at InP/GaInAs interfaces grown by OMVPE with different growth rates, focusing on the influence of the exchange reaction of the group-III atoms near the surface during the growing. The experimental results showed that the degree of distributions of Ga atoms increased with the decrease of the growth rate. It suggested that the distribution of Ga atoms at interfaces were influenced by the exchange reaction. In order to discuss the exchange reaction, a calculation to simulate the distribution of Ga atoms was conducted considering potential energy of Ga in InP layers. The results showed that Ga atoms should exchange during the growth in top-most 3 atomic layers.", "subitem_description_type": "Abstract"}]}, "item_10_identifier_60": {"attribute_name": "URI", "attribute_value_mlt": [{"subitem_identifier_type": "HDL", "subitem_identifier_uri": "http://hdl.handle.net/2237/13941"}, {"subitem_identifier_type": "DOI", "subitem_identifier_uri": "http://dx.doi.org/10.1109/ICIPRM.2009.5012414"}]}, "item_10_publisher_32": {"attribute_name": "\u51fa\u7248\u8005", "attribute_value_mlt": [{"subitem_publisher": "IEEE"}]}, "item_10_rights_12": {"attribute_name": "\u6a29\u5229", "attribute_value_mlt": [{"subitem_rights": "\u00a92009 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE."}]}, "item_10_select_15": {"attribute_name": "\u8457\u8005\u7248\u30d5\u30e9\u30b0", "attribute_value_mlt": [{"subitem_select_item": "publisher"}]}, "item_10_source_id_7": {"attribute_name": "ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "1092-8669", "subitem_source_identifier_type": "ISSN"}]}, "item_10_text_14": {"attribute_name": "\u30d5\u30a9\u30fc\u30de\u30c3\u30c8", "attribute_value_mlt": [{"subitem_text_value": "application/pdf"}]}, "item_creator": {"attribute_name": "\u8457\u8005", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Tameoka, H."}], "nameIdentifiers": [{"nameIdentifier": "38269", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Mori, A."}], "nameIdentifiers": [{"nameIdentifier": "38270", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Tabuchi, M."}], "nameIdentifiers": [{"nameIdentifier": "38271", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Takeda, Y."}], "nameIdentifiers": [{"nameIdentifier": "38272", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "\u30d5\u30a1\u30a4\u30eb\u60c5\u5831", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2018-02-20"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "tameoka.pdf", "filesize": [{"value": "201.5 kB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_free", "mimetype": "application/pdf", "size": 201500.0, "url": {"label": "tameoka.pdf", "url": "https://nagoya.repo.nii.ac.jp/record/12063/files/tameoka.pdf"}, "version_id": "77b8d96f-bd42-4c9e-98ab-05555775c694"}]}, "item_language": {"attribute_name": "\u8a00\u8a9e", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "\u8cc7\u6e90\u30bf\u30a4\u30d7", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Influence of growth rate and temperature on InP/GaInAs interface structure analyzed by X-ray CTR scattering measurement", "item_titles": {"attribute_name": "\u30bf\u30a4\u30c8\u30eb", "attribute_value_mlt": [{"subitem_title": "Influence of growth rate and temperature on InP/GaInAs interface structure analyzed by X-ray CTR scattering measurement"}]}, "item_type_id": "10", "owner": "1", "path": ["320/321/322"], "permalink_uri": "http://hdl.handle.net/2237/13941", "pubdate": {"attribute_name": "\u516c\u958b\u65e5", "attribute_name_i18n": "\u516c\u958b\u65e5", "attribute_value": "2010-08-04"}, "publish_date": "2010-08-04", "publish_status": "0", "recid": "12063", "relation": {}, "relation_version_is_last": true, "title": ["Influence of growth rate and temperature on InP/GaInAs interface structure analyzed by X-ray CTR scattering measurement"], "weko_shared_id": null}