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  1. B200 工学部/工学研究科
  2. B200a 雑誌掲載論文
  3. 学術雑誌

Influence of growth rate and temperature on InP/GaInAs interface structure analyzed by X-ray CTR scattering measurement

http://hdl.handle.net/2237/13941
http://hdl.handle.net/2237/13941
db1cb159-a70e-421e-b946-a589ecf84600
名前 / ファイル ライセンス アクション
tameoka.pdf tameoka.pdf (201.5 kB)
Item type 学術雑誌論文 / Journal Article(1)
公開日 2010-08-04
タイトル
タイトル Influence of growth rate and temperature on InP/GaInAs interface structure analyzed by X-ray CTR scattering measurement
言語 en
著者 Tameoka, H.

× Tameoka, H.

WEKO 38269

en Tameoka, H.

Search repository
Mori, A.

× Mori, A.

WEKO 38270

en Mori, A.

Search repository
Tabuchi, M.

× Tabuchi, M.

WEKO 38271

en Tabuchi, M.

Search repository
Takeda, Y.

× Takeda, Y.

WEKO 38272

en Takeda, Y.

Search repository
アクセス権
アクセス権 open access
アクセス権URI http://purl.org/coar/access_right/c_abf2
権利
言語 en
権利情報 ©2009 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
抄録
内容記述 Most of high performance III-V compound semiconductor devices are fabricated utilizing heterostructures. However, when the heterostructures are grown by OMVPE, a compositional grading arises at a hetero-interfaces. The compositional grading may deteriorate the performance of the compound semiconductor devices. We have investigated the degree of the compositional grading at the interfaces using X-ray crystal truncation rod (CTR) scattering measurement. The X-ray CTR scattering measurement is a powerful technique to investigate the buried interfaces and determine the distributions of atoms quantitatively at an atomic-scale. In this work, we studied on the distributions of group-III atoms at InP/GaInAs interfaces grown by OMVPE with different growth rates, focusing on the influence of the exchange reaction of the group-III atoms near the surface during the growing. The experimental results showed that the degree of distributions of Ga atoms increased with the decrease of the growth rate. It suggested that the distribution of Ga atoms at interfaces were influenced by the exchange reaction. In order to discuss the exchange reaction, a calculation to simulate the distribution of Ga atoms was conducted considering potential energy of Ga in InP layers. The results showed that Ga atoms should exchange during the growth in top-most 3 atomic layers.
言語 en
内容記述タイプ Abstract
出版者
言語 en
出版者 IEEE
言語
言語 eng
資源タイプ
資源タイプresource http://purl.org/coar/resource_type/c_6501
タイプ journal article
出版タイプ
出版タイプ VoR
出版タイプResource http://purl.org/coar/version/c_970fb48d4fbd8a85
DOI
関連タイプ isVersionOf
識別子タイプ DOI
関連識別子 https://doi.org/10.1109/ICIPRM.2009.5012414
ISSN
収録物識別子タイプ PISSN
収録物識別子 1092-8669
書誌情報 en : IEEE International Conference on Indium Phosphide & Related Materials (IPRM '09)

p. 55-58, 発行日 2009-05-10
フォーマット
application/pdf
著者版フラグ
値 publisher
URI
識別子 http://hdl.handle.net/2237/13941
識別子タイプ HDL
URI
識別子 http://dx.doi.org/10.1109/ICIPRM.2009.5012414
識別子タイプ DOI
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