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Influence of growth rate and temperature on InP/GaInAs interface structure analyzed by X-ray CTR scattering measurement
http://hdl.handle.net/2237/13941
http://hdl.handle.net/2237/13941db1cb159-a70e-421e-b946-a589ecf84600
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
tameoka.pdf (201.5 kB)
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||
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| 公開日 | 2010-08-04 | |||||
| タイトル | ||||||
| タイトル | Influence of growth rate and temperature on InP/GaInAs interface structure analyzed by X-ray CTR scattering measurement | |||||
| 言語 | en | |||||
| 著者 |
Tameoka, H.
× Tameoka, H.× Mori, A.× Tabuchi, M.× Takeda, Y. |
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| アクセス権 | ||||||
| アクセス権 | open access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_abf2 | |||||
| 権利 | ||||||
| 言語 | en | |||||
| 権利情報 | ©2009 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. | |||||
| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Most of high performance III-V compound semiconductor devices are fabricated utilizing heterostructures. However, when the heterostructures are grown by OMVPE, a compositional grading arises at a hetero-interfaces. The compositional grading may deteriorate the performance of the compound semiconductor devices. We have investigated the degree of the compositional grading at the interfaces using X-ray crystal truncation rod (CTR) scattering measurement. The X-ray CTR scattering measurement is a powerful technique to investigate the buried interfaces and determine the distributions of atoms quantitatively at an atomic-scale. In this work, we studied on the distributions of group-III atoms at InP/GaInAs interfaces grown by OMVPE with different growth rates, focusing on the influence of the exchange reaction of the group-III atoms near the surface during the growing. The experimental results showed that the degree of distributions of Ga atoms increased with the decrease of the growth rate. It suggested that the distribution of Ga atoms at interfaces were influenced by the exchange reaction. In order to discuss the exchange reaction, a calculation to simulate the distribution of Ga atoms was conducted considering potential energy of Ga in InP layers. The results showed that Ga atoms should exchange during the growth in top-most 3 atomic layers. | |||||
| 言語 | en | |||||
| 出版者 | ||||||
| 出版者 | IEEE | |||||
| 言語 | en | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプresource | http://purl.org/coar/resource_type/c_6501 | |||||
| タイプ | journal article | |||||
| 出版タイプ | ||||||
| 出版タイプ | VoR | |||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
| DOI | ||||||
| 関連タイプ | isVersionOf | |||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | https://doi.org/10.1109/ICIPRM.2009.5012414 | |||||
| ISSN | ||||||
| 収録物識別子タイプ | PISSN | |||||
| 収録物識別子 | 1092-8669 | |||||
| 書誌情報 |
en : IEEE International Conference on Indium Phosphide & Related Materials (IPRM '09) p. 55-58, 発行日 2009-05-10 |
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| フォーマット | ||||||
| 値 | application/pdf | |||||
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| 値 | publisher | |||||
| URI | ||||||
| 識別子 | http://hdl.handle.net/2237/13941 | |||||
| 識別子タイプ | HDL | |||||
| URI | ||||||
| 識別子 | http://dx.doi.org/10.1109/ICIPRM.2009.5012414 | |||||
| 識別子タイプ | DOI | |||||
