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Influence of ionization energy change on valence band offset in organic p-n junction
http://hdl.handle.net/2237/14155
http://hdl.handle.net/2237/1415591695325-bd79-4a55-819a-0e1a1e25ab5f
| 名前 / ファイル | ライセンス | アクション |
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APPLIED_PHYSICS_LETTERS_95_11_113306.pdf (345.8 kB)
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| アイテムタイプ | 学術雑誌論文 / Journal Article(1) | |||||
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| 公開日 | 2010-09-16 | |||||
| タイトル | ||||||
| タイトル | Influence of ionization energy change on valence band offset in organic p-n junction | |||||
| 言語 | en | |||||
| 著者 |
Akaike, Kouki
× Akaike, Kouki× Kanai, kaname× Ouchi, Yukio× Seki, Kazuhiko |
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| アクセス権 | ||||||
| アクセス権 | open access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_abf2 | |||||
| 権利 | ||||||
| 権利情報 | Copyright (2010) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. | |||||
| 言語 | en | |||||
| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Valence band offsets at [6,6]-phenyl-C61-butyric acid methyl ester (PCBM)/metallophthalocyanine (MPc, M = Cu and Zn) interfaces have been investigated with ultraviolet photoelectron spectroscopy, which are organic p-n junctions in organic photovoltaics. The highest occupied molecular orbitals of MPcs rise toward the interface, while that of PCBM lowers. This behavior implies that the different energy band offsets from inorganic p-n junction are realized in organic p-n junction. The depletion layers were not observed at the interfaces. Such anomalous energy band offsets are attributed to the interfacial dipole and also ionization energy changes of MPcs and PCBM at the interface. | |||||
| 言語 | en | |||||
| 出版者 | ||||||
| 出版者 | American Institute of Physics | |||||
| 言語 | en | |||||
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| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプresource | http://purl.org/coar/resource_type/c_6501 | |||||
| タイプ | journal article | |||||
| 出版タイプ | ||||||
| 出版タイプ | VoR | |||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
| DOI | ||||||
| 関連タイプ | isVersionOf | |||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | https://doi.org/10.1063/1.3231926 | |||||
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| 収録物識別子タイプ | PISSN | |||||
| 収録物識別子 | 0003-6951 | |||||
| 書誌情報 |
en : APPLIED PHYSICS LETTERS 巻 95, 号 11, p. 113306-113306, 発行日 2009-09 |
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| 値 | application/pdf | |||||
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| 値 | publisher | |||||
| URI | ||||||
| 識別子 | http://hdl.handle.net/2237/14155 | |||||
| 識別子タイプ | HDL | |||||
| URI | ||||||
| 識別子 | http://dx.doi.org/10.1063/1.3231926 | |||||
| 識別子タイプ | DOI | |||||
