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  1. B100 理学部/理学研究科
  2. B100a 雑誌掲載論文
  3. 学術雑誌

Influence of ionization energy change on valence band offset in organic p-n junction

http://hdl.handle.net/2237/14155
http://hdl.handle.net/2237/14155
91695325-bd79-4a55-819a-0e1a1e25ab5f
名前 / ファイル ライセンス アクション
APPLIED_PHYSICS_LETTERS_95_11_113306.pdf APPLIED_PHYSICS_LETTERS_95_11_113306.pdf (345.8 kB)
Item type 学術雑誌論文 / Journal Article(1)
公開日 2010-09-16
タイトル
タイトル Influence of ionization energy change on valence band offset in organic p-n junction
言語 en
著者 Akaike, Kouki

× Akaike, Kouki

WEKO 38752

en Akaike, Kouki

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Kanai, kaname

× Kanai, kaname

WEKO 38753

en Kanai, kaname

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Ouchi, Yukio

× Ouchi, Yukio

WEKO 38754

en Ouchi, Yukio

Search repository
Seki, Kazuhiko

× Seki, Kazuhiko

WEKO 38755

en Seki, Kazuhiko

Search repository
アクセス権
アクセス権 open access
アクセス権URI http://purl.org/coar/access_right/c_abf2
権利
言語 en
権利情報 Copyright (2010) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
抄録
内容記述 Valence band offsets at [6,6]-phenyl-C61-butyric acid methyl ester (PCBM)/metallophthalocyanine (MPc, M = Cu and Zn) interfaces have been investigated with ultraviolet photoelectron spectroscopy, which are organic p-n junctions in organic photovoltaics. The highest occupied molecular orbitals of MPcs rise toward the interface, while that of PCBM lowers. This behavior implies that the different energy band offsets from inorganic p-n junction are realized in organic p-n junction. The depletion layers were not observed at the interfaces. Such anomalous energy band offsets are attributed to the interfacial dipole and also ionization energy changes of MPcs and PCBM at the interface.
言語 en
内容記述タイプ Abstract
出版者
言語 en
出版者 American Institute of Physics
言語
言語 eng
資源タイプ
資源タイプresource http://purl.org/coar/resource_type/c_6501
タイプ journal article
出版タイプ
出版タイプ VoR
出版タイプResource http://purl.org/coar/version/c_970fb48d4fbd8a85
DOI
関連タイプ isVersionOf
識別子タイプ DOI
関連識別子 https://doi.org/10.1063/1.3231926
ISSN
収録物識別子タイプ PISSN
収録物識別子 0003-6951
書誌情報 en : APPLIED PHYSICS LETTERS

巻 95, 号 11, p. 113306-113306, 発行日 2009-09
フォーマット
application/pdf
著者版フラグ
値 publisher
URI
識別子 http://hdl.handle.net/2237/14155
識別子タイプ HDL
URI
識別子 http://dx.doi.org/10.1063/1.3231926
識別子タイプ DOI
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