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La-doped EuO: A rare earth ferromagnetic semiconductor with the highest Curie temperature
http://hdl.handle.net/2237/14169
http://hdl.handle.net/2237/141693d27a8b5-00d2-4c0b-b5d5-9138861457e3
名前 / ファイル | ライセンス | アクション |
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2010-09-21 | |||||
タイトル | ||||||
タイトル | La-doped EuO: A rare earth ferromagnetic semiconductor with the highest Curie temperature | |||||
言語 | en | |||||
著者 |
Miyazaki, H.
× Miyazaki, H.× Im, H. J.× Terashima, K.× Yagi, S.× Kato, M.× Soda, K.× Ito, T.× Kimura, S. |
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アクセス権 | ||||||
アクセス権 | open access | |||||
アクセス権URI | http://purl.org/coar/access_right/c_abf2 | |||||
権利 | ||||||
言語 | en | |||||
権利情報 | Copyright (2010) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. | |||||
抄録 | ||||||
内容記述 | We report the fabrication of single-crystalline La-doped EuO thin films with a Curie temperature (TC) of about 200 K, the highest among rare-earth compounds without transition metals. From first-principle band calculation and x-ray diffraction measurement, the observed increase in TC cannot be explained only by the increase in hybridization intensity due to lattice contraction and the increase in up-spin electrons of the Eu 5d state caused by the electron doping. Hybridization between the Eu 4f and donor states and/or Ruderman–Kittel–Kasuya–Yoshida interaction mediated by the doped La 5d state is a possible origin of the increase in TC. | |||||
言語 | en | |||||
内容記述タイプ | Abstract | |||||
出版者 | ||||||
言語 | en | |||||
出版者 | American Institute of Physics | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプresource | http://purl.org/coar/resource_type/c_6501 | |||||
タイプ | journal article | |||||
出版タイプ | ||||||
出版タイプ | VoR | |||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
DOI | ||||||
関連タイプ | isVersionOf | |||||
識別子タイプ | DOI | |||||
関連識別子 | https://doi.org/10.1063/1.3416911 | |||||
ISSN | ||||||
収録物識別子タイプ | PISSN | |||||
収録物識別子 | 0003-6951 | |||||
書誌情報 |
en : APPLIED PHYSICS LETTERS 巻 96, 号 23, p. 232503-232503, 発行日 2010-06-07 |
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フォーマット | ||||||
application/pdf | ||||||
著者版フラグ | ||||||
値 | publisher | |||||
URI | ||||||
識別子 | http://hdl.handle.net/2237/14169 | |||||
識別子タイプ | HDL | |||||
URI | ||||||
識別子 | http://dx.doi.org/10.1063/1.3416911 | |||||
識別子タイプ | DOI |