{"_buckets": {"deposit": "f4df45c0-55c3-41b9-96c3-2c6dba06ddd8"}, "_deposit": {"id": "12301", "owners": [], "pid": {"revision_id": 0, "type": "depid", "value": "12301"}, "status": "published"}, "_oai": {"id": "oai:nagoya.repo.nii.ac.jp:00012301", "sets": ["696"]}, "author_link": ["38900", "38901", "38902", "38903", "38904", "38905"], "item_10_biblio_info_6": {"attribute_name": "書誌情報", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2010-06-28", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "26", "bibliographicPageEnd": "263105", "bibliographicPageStart": "263105", "bibliographicVolumeNumber": "96", "bibliographic_titles": [{"bibliographic_title": "APPLIED PHYSICS LETTERS", "bibliographic_titleLang": "en"}]}]}, "item_10_description_4": {"attribute_name": "抄録", "attribute_value_mlt": [{"subitem_description": "We report the synthesis of single-layer graphenes from ethanol using, what we call, “flash cooling” just after chemical vapor deposition. The single-layer graphenes synthesized are high-quality and several micrometers in grain size as revealed by Raman spectroscopy. Detailed comparison of the cooling processes suggests that the single-layer graphene growth does not occur during the carbon precipitation but rather stems from surface diffusions of carbon on a nickel substrate. Because of the present simple and easiness for the large-scale synthesis under an inert gas atmosphere and at atmospheric pressure, the present method can easily be applied for the future large-scale and low-cost graphene production.", "subitem_description_language": "en", "subitem_description_type": "Abstract"}]}, "item_10_identifier_60": {"attribute_name": "URI", "attribute_value_mlt": [{"subitem_identifier_type": "HDL", "subitem_identifier_uri": "http://hdl.handle.net/2237/14182"}, {"subitem_identifier_type": "DOI", "subitem_identifier_uri": "http://dx.doi.org/10.1063/1.3458797"}]}, "item_10_publisher_32": {"attribute_name": "出版者", "attribute_value_mlt": [{"subitem_publisher": "American Institute of Physics", "subitem_publisher_language": "en"}]}, "item_10_relation_11": {"attribute_name": "DOI", "attribute_value_mlt": [{"subitem_relation_type": "isVersionOf", "subitem_relation_type_id": {"subitem_relation_type_id_text": "https://doi.org/10.1063/1.3458797", "subitem_relation_type_select": "DOI"}}]}, "item_10_rights_12": {"attribute_name": "権利", "attribute_value_mlt": [{"subitem_rights": "Copyright (2010) American Institute of Physics. 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