{"_buckets": {"deposit": "d2c47fdf-74c2-4b20-a135-2d351adf7a00"}, "_deposit": {"created_by": 17, "id": "2001508", "owner": "17", "owners": [17], "owners_ext": {"displayname": "図書情報係", "username": "repository"}, "pid": {"revision_id": 0, "type": "depid", "value": "2001508"}, "status": "published"}, "_oai": {"id": "oai:nagoya.repo.nii.ac.jp:02001508", "sets": ["322"]}, "author_link": [], "control_number": "2001508", "item_1615768549627": {"attribute_name": "出版タイプ", "attribute_value_mlt": [{"subitem_version_resource": "http://purl.org/coar/version/c_970fb48d4fbd8a85", "subitem_version_type": "VoR"}]}, "item_1629683748249": {"attribute_name": "日付", "attribute_value_mlt": [{"subitem_date_issued_datetime": "2022-01-05", "subitem_date_issued_type": "Available"}]}, "item_9_biblio_info_6": {"attribute_name": "書誌情報", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2021-01-05", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "1", "bibliographicPageStart": "012106", "bibliographicVolumeNumber": "118", "bibliographic_titles": [{"bibliographic_title": "Applied Physics Letters", "bibliographic_titleLang": "en"}]}]}, "item_9_description_4": {"attribute_name": "内容記述", "attribute_value_mlt": [{"subitem_description": "Energy levels due to intrinsic point defects are identified by deep-level transient spectroscopy (DLTS). Electron-beam (EB) irradiation created nitrogen vacancies (VN) and nitrogen interstitials (NI) in n-type GaN layers grown via metalorganic vapor phase epitaxy on freestanding GaN substrates, where the irradiation energies were selected to be within 100–401 keV to displace only nitrogen atoms in GaN. Two electron traps, EE1 (0.13 eV) and EE2 (0.98 eV), were observed in the DLTS spectra. The production rates of EE1 and EE2 were 0.093 and 0.109 cm−1 under 401 keV irradiation, which were nearly equal values. In the DLTS spectra recorded for EB-irradiated samples at the energy ranging from 100 to 401 keV, EE1 and EE2 were found to appear simultaneously at an irradiation energy of 137 keV and were observed at energies greater than 137 keV. On the basis of a comparison with the results of recent first-principles calculations, we attributed the EE1 and EE2 peaks to nitrogen vacancies VN (+/0) and nitrogen interstitials NI (0/−), respectively. Furthermore, annealing led to reductions of the densities of these traps at the same rate. The reduction of the densities of EE1 and EE2 can be explained by the migration of NI and the subsequent recombination with VN. The displacement energy of 21.8 eV for nitrogen in GaN was obtained from the irradiation-energy dependence of EE1.", "subitem_description_language": "en", "subitem_description_type": "Abstract"}]}, "item_9_publisher_32": {"attribute_name": "出版者", "attribute_value_mlt": [{"subitem_publisher": "AIP Publishing", "subitem_publisher_language": "en"}]}, "item_9_relation_43": {"attribute_name": "関連情報", "attribute_value_mlt": [{"subitem_relation_type": "isVersionOf", "subitem_relation_type_id": {"subitem_relation_type_id_text": "https://doi.org/10.1063/5.0035235", "subitem_relation_type_select": "DOI"}}]}, "item_9_rights_12": {"attribute_name": "権利", "attribute_value_mlt": [{"subitem_rights": "Copyright 2021 Author(s). Published under an exclusive license by AIP Publishing. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing.The following article appeared in (Applied Physics Letters 118(1), 012106 (2021)) and may be found at (https://doi.org/10.1063/5.0035235).", "subitem_rights_language": "en"}]}, "item_9_source_id_7": {"attribute_name": "収録物識別子", "attribute_value_mlt": [{"subitem_source_identifier": "0003-6951", "subitem_source_identifier_type": "PISSN"}]}, "item_access_right": {"attribute_name": "アクセス権", "attribute_value_mlt": [{"subitem_access_right": "open access", "subitem_access_right_uri": "http://purl.org/coar/access_right/c_abf2"}]}, "item_creator": {"attribute_name": "著者", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Horita, Masahiro", "creatorNameLang": "en"}]}, {"creatorNames": [{"creatorName": "Narita, Tetsuo", "creatorNameLang": "en"}]}, {"creatorNames": [{"creatorName": "Kachi, Tetsu", "creatorNameLang": "en"}]}, {"creatorNames": [{"creatorName": "Suda, Jun", "creatorNameLang": "en"}]}]}, "item_files": {"attribute_name": "ファイル情報", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2022-01-05"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "5_0035235.pdf", "filesize": [{"value": "1.2 MB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "mimetype": "application/pdf", "size": 1200000.0, "url": {"objectType": "fulltext", "url": "https://nagoya.repo.nii.ac.jp/record/2001508/files/5_0035235.pdf"}, "version_id": "db13035a-4522-4ea8-af89-01a58e64e7be"}]}, "item_language": {"attribute_name": "言語", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Nitrogen-displacement-related electron traps in n-type GaN grown on a GaN freestanding substrate", "item_titles": {"attribute_name": "タイトル", "attribute_value_mlt": [{"subitem_title": "Nitrogen-displacement-related electron traps in n-type GaN grown on a GaN freestanding substrate", "subitem_title_language": "en"}]}, "item_type_id": "40001", "owner": "17", "path": ["322"], "permalink_uri": "http://hdl.handle.net/2237/0002001508", "pubdate": {"attribute_name": "PubDate", "attribute_value": "2021-10-14"}, "publish_date": "2021-10-14", "publish_status": "0", "recid": "2001508", "relation": {}, "relation_version_is_last": true, "title": ["Nitrogen-displacement-related electron traps in n-type GaN grown on a GaN freestanding substrate"], "weko_shared_id": -1}