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  1. B200 工学部/工学研究科
  2. B200a 雑誌掲載論文
  3. 学術雑誌

Nitrogen-displacement-related electron traps in n-type GaN grown on a GaN freestanding substrate

http://hdl.handle.net/2237/0002001508
http://hdl.handle.net/2237/0002001508
1cf1ba21-8ad3-4a54-9e6e-dfbe19aa09b0
名前 / ファイル ライセンス アクション
5_0035235.pdf 5_0035235.pdf (1.2 MB)
Item type itemtype_ver1(1)
公開日 2021-10-14
タイトル
タイトル Nitrogen-displacement-related electron traps in n-type GaN grown on a GaN freestanding substrate
言語 en
著者 Horita, Masahiro

× Horita, Masahiro

en Horita, Masahiro

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Narita, Tetsuo

× Narita, Tetsuo

en Narita, Tetsuo

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Kachi, Tetsu

× Kachi, Tetsu

en Kachi, Tetsu

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Suda, Jun

× Suda, Jun

en Suda, Jun

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アクセス権
アクセス権 open access
アクセス権URI http://purl.org/coar/access_right/c_abf2
権利
言語 en
権利情報 Copyright 2021 Author(s). Published under an exclusive license by AIP Publishing. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing.The following article appeared in (Applied Physics Letters 118(1), 012106 (2021)) and may be found at (https://doi.org/10.1063/5.0035235).
内容記述
内容記述 Energy levels due to intrinsic point defects are identified by deep-level transient spectroscopy (DLTS). Electron-beam (EB) irradiation created nitrogen vacancies (VN) and nitrogen interstitials (NI) in n-type GaN layers grown via metalorganic vapor phase epitaxy on freestanding GaN substrates, where the irradiation energies were selected to be within 100–401 keV to displace only nitrogen atoms in GaN. Two electron traps, EE1 (0.13 eV) and EE2 (0.98 eV), were observed in the DLTS spectra. The production rates of EE1 and EE2 were 0.093 and 0.109 cm−1 under 401 keV irradiation, which were nearly equal values. In the DLTS spectra recorded for EB-irradiated samples at the energy ranging from 100 to 401 keV, EE1 and EE2 were found to appear simultaneously at an irradiation energy of 137 keV and were observed at energies greater than 137 keV. On the basis of a comparison with the results of recent first-principles calculations, we attributed the EE1 and EE2 peaks to nitrogen vacancies VN (+/0) and nitrogen interstitials NI (0/−), respectively. Furthermore, annealing led to reductions of the densities of these traps at the same rate. The reduction of the densities of EE1 and EE2 can be explained by the migration of NI and the subsequent recombination with VN. The displacement energy of 21.8 eV for nitrogen in GaN was obtained from the irradiation-energy dependence of EE1.
言語 en
内容記述タイプ Abstract
出版者
言語 en
出版者 AIP Publishing
言語
言語 eng
資源タイプ
資源タイプresource http://purl.org/coar/resource_type/c_6501
タイプ journal article
出版タイプ
出版タイプ VoR
出版タイプResource http://purl.org/coar/version/c_970fb48d4fbd8a85
関連情報
関連タイプ isVersionOf
識別子タイプ DOI
関連識別子 https://doi.org/10.1063/5.0035235
収録物識別子
収録物識別子タイプ PISSN
収録物識別子 0003-6951
書誌情報 en : Applied Physics Letters

巻 118, 号 1, p. 012106, 発行日 2021-01-05
ファイル公開日
日付 2022-01-05
日付タイプ Available
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