| Item type |
itemtype_ver1(1) |
| 公開日 |
2021-11-11 |
| タイトル |
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|
タイトル |
Mg-implanted bevel edge termination structure for GaN power device applications |
|
言語 |
en |
| 著者 |
Matys, Maciej
Ishida, Takashi
Nam Kyung Pil
Sakurai, Hideki
Narita, Tetsuo
Uesugi, Tsutomu
Bockowski, Michal
Suda, Jun
Kachi, Tetsu
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| アクセス権 |
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|
アクセス権 |
open access |
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アクセス権URI |
http://purl.org/coar/access_right/c_abf2 |
| 権利 |
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|
言語 |
en |
|
権利情報 |
Copyright 2021 Author(s). Published under an exclusive license by AIP Publishing. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing.The following article appeared in (Appl. Phys. Lett. 118, 093502 (2021)) and may be found at (https://doi.org/10.1063/5.0039183). |
| 内容記述 |
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|
内容記述タイプ |
Abstract |
|
内容記述 |
Herein, we propose and demonstrate the edge termination for GaN-based one-sided abrupt p–n junctions. The structure is comprised of a combination of a shallow negative bevel mesa and selective-area p-type doping under the mesa. Based on the Technology Computer Aided Design (TCAD) simulation, the maximum electric field at the junction edge is markedly reduced to approximately 1.3 times that of the parallel-plane electric field in the proposed structure, which is almost half of the unimplanted diode. The TCAD simulation also shows that the shallow mesa angle of 6° effectively reduces the optimum acceptor concentration (Na) in the implanted region and enhances the breakdown voltage. The optimum Na value can be covered by the proposed technology based on the Mg-ion implantation and subsequent ultra-high-pressure annealing (UHPA). Using the formation of the shallow bevel mesa, the Mg-ion implantation, and the UHPA process, we experimentally demonstrate the p–n diodes with a breakdown voltage over 600 V, which is in good agreement with the TCAD simulation. The proposed method can be applied to a vertical trench-gate metal-oxide-semiconductor field-effect transistor with a high figure-of-merit. |
|
言語 |
en |
| 出版者 |
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|
出版者 |
AIP Publishing |
|
言語 |
en |
| 言語 |
|
|
言語 |
eng |
| 資源タイプ |
|
|
資源タイプresource |
http://purl.org/coar/resource_type/c_6501 |
|
タイプ |
journal article |
| 出版タイプ |
|
|
出版タイプ |
VoR |
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出版タイプResource |
http://purl.org/coar/version/c_970fb48d4fbd8a85 |
| 関連情報 |
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|
関連タイプ |
isVersionOf |
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|
識別子タイプ |
DOI |
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|
関連識別子 |
https://doi.org/10.1063/5.0039183 |
| 収録物識別子 |
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収録物識別子タイプ |
PISSN |
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収録物識別子 |
0003-6951 |
| 書誌情報 |
en : Applied Physics Letters
巻 118,
号 9,
p. 093502,
発行日 2021-03-03
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| ファイル公開日 |
|
|
日付 |
2022-03-03 |
|
日付タイプ |
Available |
5_0039183.pdf (1.8 MB)
