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  1. H200 未来材料・システム研究所
  2. H200a 雑誌掲載論文
  3. 学術雑誌

Mg-implanted bevel edge termination structure for GaN power device applications

http://hdl.handle.net/2237/0002001588
http://hdl.handle.net/2237/0002001588
6142684f-67ec-460a-8635-45ca7fce868f
名前 / ファイル ライセンス アクション
5_0039183.pdf 5_0039183.pdf (1.8 MB)
Item type itemtype_ver1(1)
公開日 2021-11-11
タイトル
タイトル Mg-implanted bevel edge termination structure for GaN power device applications
言語 en
著者 Matys, Maciej

× Matys, Maciej

en Matys, Maciej

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Ishida, Takashi

× Ishida, Takashi

en Ishida, Takashi

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Nam Kyung Pil

× Nam Kyung Pil

en Nam Kyung Pil

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Sakurai, Hideki

× Sakurai, Hideki

en Sakurai, Hideki

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Narita, Tetsuo

× Narita, Tetsuo

en Narita, Tetsuo

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Uesugi, Tsutomu

× Uesugi, Tsutomu

en Uesugi, Tsutomu

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Bockowski, Michal

× Bockowski, Michal

en Bockowski, Michal

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Suda, Jun

× Suda, Jun

en Suda, Jun

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Kachi, Tetsu

× Kachi, Tetsu

en Kachi, Tetsu

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アクセス権
アクセス権 open access
アクセス権URI http://purl.org/coar/access_right/c_abf2
権利
言語 en
権利情報 Copyright 2021 Author(s). Published under an exclusive license by AIP Publishing. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing.The following article appeared in (Appl. Phys. Lett. 118, 093502 (2021)) and may be found at (https://doi.org/10.1063/5.0039183).
内容記述
内容記述タイプ Abstract
内容記述 Herein, we propose and demonstrate the edge termination for GaN-based one-sided abrupt p–n junctions. The structure is comprised of a combination of a shallow negative bevel mesa and selective-area p-type doping under the mesa. Based on the Technology Computer Aided Design (TCAD) simulation, the maximum electric field at the junction edge is markedly reduced to approximately 1.3 times that of the parallel-plane electric field in the proposed structure, which is almost half of the unimplanted diode. The TCAD simulation also shows that the shallow mesa angle of 6° effectively reduces the optimum acceptor concentration (Na) in the implanted region and enhances the breakdown voltage. The optimum Na value can be covered by the proposed technology based on the Mg-ion implantation and subsequent ultra-high-pressure annealing (UHPA). Using the formation of the shallow bevel mesa, the Mg-ion implantation, and the UHPA process, we experimentally demonstrate the p–n diodes with a breakdown voltage over 600 V, which is in good agreement with the TCAD simulation. The proposed method can be applied to a vertical trench-gate metal-oxide-semiconductor field-effect transistor with a high figure-of-merit.
言語 en
出版者
出版者 AIP Publishing
言語 en
言語
言語 eng
資源タイプ
資源タイプresource http://purl.org/coar/resource_type/c_6501
タイプ journal article
出版タイプ
出版タイプ VoR
出版タイプResource http://purl.org/coar/version/c_970fb48d4fbd8a85
関連情報
関連タイプ isVersionOf
識別子タイプ DOI
関連識別子 https://doi.org/10.1063/5.0039183
収録物識別子
収録物識別子タイプ PISSN
収録物識別子 0003-6951
書誌情報 en : Applied Physics Letters

巻 118, 号 9, p. 093502, 発行日 2021-03-03
ファイル公開日
日付 2022-03-03
日付タイプ Available
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