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  1. B200 工学部/工学研究科
  2. B200a 雑誌掲載論文
  3. 学術雑誌

Impact of heat treatment process on threshold current density in AlGaN-based deep-ultraviolet laser diodes on AlN substrate

http://hdl.handle.net/2237/0002001600
http://hdl.handle.net/2237/0002001600
2ab01733-410b-4182-8ec5-a27d6d0a236d
名前 / ファイル ライセンス アクション
210323_body.pdf 210323_body.pdf (6.7 MB)
Item type itemtype_ver1(1)
公開日 2021-11-11
タイトル
タイトル Impact of heat treatment process on threshold current density in AlGaN-based deep-ultraviolet laser diodes on AlN substrate
言語 en
著者 Kushimoto, Maki

× Kushimoto, Maki

en Kushimoto, Maki

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Zhang, Ziyi

× Zhang, Ziyi

en Zhang, Ziyi

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Sugiyama, Naoharu

× Sugiyama, Naoharu

en Sugiyama, Naoharu

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Honda, Yoshio

× Honda, Yoshio

en Honda, Yoshio

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Schowalter, Leo J.

× Schowalter, Leo J.

en Schowalter, Leo J.

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Sasaoka, Chiaki

× Sasaoka, Chiaki

en Sasaoka, Chiaki

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Amano, Hiroshi

× Amano, Hiroshi

en Amano, Hiroshi

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アクセス権
アクセス権 open access
アクセス権URI http://purl.org/coar/access_right/c_abf2
権利
言語 en
権利情報 This is the Accepted Manuscript version of an article accepted for publication in [Applied Physics Express]. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at [https://doi.org/10.35848/1882-0786/abf443]
権利
言語 en
権利情報 “This Accepted Manuscript is available for reuse under a CC BY-NC-ND licence after the 12 month embargo period provided that all the terms of the licence are adhered to”
内容記述
内容記述 The electroluminescence (EL) uniformity of AlGaN-based deep UV laser diodes on AlN substrate was analyzed by using the EL imaging technique. Although nonuniform EL patterns were observed, the uniformity was improved by changing the position of the p-electrode. The threshold current density was also reduced by suppressing the inhomogeneity of the EL. Cathodoluminescence analysis revealed that the cause of the non-uniformity is the degradation of the active layer and the nonuniformity emission formed by rapid thermal annealing at high temperature after mesa structure formation.
言語 en
内容記述タイプ Abstract
出版者
言語 en
出版者 IOP publishing
言語
言語 eng
資源タイプ
資源タイプresource http://purl.org/coar/resource_type/c_6501
タイプ journal article
出版タイプ
出版タイプ AM
出版タイプResource http://purl.org/coar/version/c_ab4af688f83e57aa
関連情報
関連タイプ isVersionOf
識別子タイプ DOI
関連識別子 https://doi.org/10.35848/1882-0786/abf443
収録物識別子
収録物識別子タイプ PISSN
収録物識別子 1882-0778
書誌情報 en : Applied Physics Express

巻 14, 号 5, p. 051003, 発行日 2021-05
ファイル公開日
日付 2022-05-01
日付タイプ Available
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