| Item type |
itemtype_ver1(1) |
| 公開日 |
2021-12-07 |
| タイトル |
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|
タイトル |
Acridino[2,1,9,8-klmna]acridine Bisimides: An Electron-Deficient π-System for Robust Radical Anions and n-Type Organic Semiconductors |
|
言語 |
en |
| 著者 |
Tajima, Keita
Matsuo, Kyohei
Yamada, Hiroko
Seki, Shu
Fukui, Norihito
Shinokubo, Hiroshi
|
| アクセス権 |
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|
アクセス権 |
open access |
|
アクセス権URI |
http://purl.org/coar/access_right/c_abf2 |
| 権利 |
|
|
言語 |
en |
|
権利情報 |
"This is the peer reviewed version of the following article: [K. Tajima, K. Matsuo, H. Yamada, S. Seki, N. Fukui, H. Shinokubo, Angew. Chem. Int. Ed. 2021, 60, 14060.], which has been published in final form at [https://doi.org/10.1002/anie.202102708]. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Use of Self-Archived Versions. This article may not be enhanced, enriched or otherwise transformed into a derivative work, without express permission from Wiley or by statutory rights under applicable legislation. Copyright notices must not be removed, obscured or modified. The article must be linked to Wiley’s version of record on Wiley Online Library and any embedding, framing or otherwise making available the article or pages thereof by third parties from platforms, services and websites other than Wiley Online Library must be prohibited." |
| 内容記述 |
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|
内容記述タイプ |
Abstract |
|
内容記述 |
We report the synthesis and properties of acridino[2,1,9,8-klmna]acridine bisimide (AABI), a nitrogen-doped anthanthrene with two imide functionalities. AABI exhibits excellent electron affinity as evident by its low-lying LUMO level (−4.1 eV vs. vacuum). Single-electron reduction of one AABI derivative afforded the corresponding radical anion, which was stable under ambient conditions. Photoconductivity measurements suggest that the intrinsic electron mobility of an N-phenethyl AABI derivative obeys a band-transport model. Accordingly, an electron mobility of 0.90 cm^2 V^−1 s^−1 was attained with the corresponding single-crystal organic field-effect transistor (OFET) device. The vacuum-deposited OFET device consisting of a polycrystalline sample exhibited high electron mobility of up to 0.27 cm^2 V^−1 s^−1 even in air. This study demonstrates that dual incorporation of both imide substituents and imine-type nitrogen atoms is an effective strategy to create novel electron-deficient π-systems. |
|
言語 |
en |
| 出版者 |
|
|
出版者 |
Wiley |
|
言語 |
en |
| 言語 |
|
|
言語 |
eng |
| 資源タイプ |
|
|
資源タイプ識別子 |
http://purl.org/coar/resource_type/c_6501 |
|
資源タイプ |
journal article |
| 出版タイプ |
|
|
出版タイプ |
AM |
|
出版タイプResource |
http://purl.org/coar/version/c_ab4af688f83e57aa |
| 関連情報 |
|
|
関連タイプ |
isVersionOf |
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|
識別子タイプ |
DOI |
|
|
関連識別子 |
https://doi.org/10.1002/anie.202102708 |
| 収録物識別子 |
|
|
収録物識別子タイプ |
PISSN |
|
収録物識別子 |
1433-7851 |
| 書誌情報 |
en : Angewandte Chemie International Edition
巻 60,
号 25,
p. 14060-14067,
発行日 2021-06-14
|
| ファイル公開日 |
|
|
日付 |
2022-06-14 |
|
日付タイプ |
Available |
Tajima-MS-rev-210413_hy.pdf (8.3 MB)
