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  1. F200 未来材料・システム研究所
  2. F200a 雑誌掲載論文
  3. 学術雑誌

Vertical GaN p+-n junction diode with ideal avalanche capability grown by halide vapor phase epitaxy

http://hdl.handle.net/2237/0002002178
http://hdl.handle.net/2237/0002002178
d634fdb8-25c5-45da-bb66-f9967e10c9ec
名前 / ファイル ライセンス アクション
5_0066139.pdf 5_0066139.pdf (2.7 MB)
Item type itemtype_ver1(1)
公開日 2022-03-09
タイトル
タイトル Vertical GaN p+-n junction diode with ideal avalanche capability grown by halide vapor phase epitaxy
言語 en
著者 Ohnishi, Kazuki

× Ohnishi, Kazuki

en Ohnishi, Kazuki

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Kawasaki, Seiya

× Kawasaki, Seiya

en Kawasaki, Seiya

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Fujimoto, Naoki

× Fujimoto, Naoki

en Fujimoto, Naoki

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Nitta, Shugo

× Nitta, Shugo

en Nitta, Shugo

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Watanabe, Hirotaka

× Watanabe, Hirotaka

en Watanabe, Hirotaka

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Honda, Yoshio

× Honda, Yoshio

en Honda, Yoshio

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Amano, Hiroshi

× Amano, Hiroshi

en Amano, Hiroshi

Search repository
アクセス権
アクセス権 open access
アクセス権URI http://purl.org/coar/access_right/c_abf2
権利
言語 en
権利情報 Copyright 2021 Author(s). Published under an exclusive license by AIP Publishing. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing.The following article appeared in (Appl. Phys. Lett. 119, 152102 (2021)) and may be found at (https://doi.org/10.1063/5.0066139).
内容記述
内容記述 A vertical GaN p^+-n junction diode with an ideal breakdown voltage was grown by halide vapor phase epitaxy (HVPE). A steep p^+-n interface was observed even with the use of the HVPE method. No Si-accumulating layer was formed at the p^+-n interface because of the continuous HVPE growth from the n-type drift layer to the p-type layer. This method provides improved electrical properties compared with the regrowth of p-type GaN layers. The minimum ideality factor of approximately 1.6 was obtained. The breakdown voltage increased from 874 to 974 V with the increase in the temperature from 25 to 200 °C, which suggests that avalanche multiplication causes the breakdown. The temperature-dependent breakdown voltage was in good agreement with the breakdown voltage calculated using the ideal critical electric field. These results indicate that HVPE is promising for the fabrication of vertical GaN power devices.
言語 en
内容記述タイプ Abstract
出版者
言語 en
出版者 AIP Publishing
言語
言語 eng
資源タイプ
資源タイプresource http://purl.org/coar/resource_type/c_6501
タイプ journal article
出版タイプ
出版タイプ VoR
出版タイプResource http://purl.org/coar/version/c_970fb48d4fbd8a85
関連情報
関連タイプ isVersionOf
識別子タイプ DOI
関連識別子 https://doi.org/10.1063/5.0066139
収録物識別子
収録物識別子タイプ PISSN
収録物識別子 0003-6951
書誌情報 en : Applied Physics Letters

巻 119, 号 15, p. 152102, 発行日 2021-10-12
ファイル公開日
日付 2022-10-12
日付タイプ Available
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