Item type |
itemtype_ver1(1) |
公開日 |
2022-03-09 |
タイトル |
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タイトル |
Vertical GaN p+-n junction diode with ideal avalanche capability grown by halide vapor phase epitaxy |
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言語 |
en |
著者 |
Ohnishi, Kazuki
Kawasaki, Seiya
Fujimoto, Naoki
Nitta, Shugo
Watanabe, Hirotaka
Honda, Yoshio
Amano, Hiroshi
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アクセス権 |
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アクセス権 |
open access |
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アクセス権URI |
http://purl.org/coar/access_right/c_abf2 |
権利 |
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言語 |
en |
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権利情報 |
Copyright 2021 Author(s). Published under an exclusive license by AIP Publishing. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing.The following article appeared in (Appl. Phys. Lett. 119, 152102 (2021)) and may be found at (https://doi.org/10.1063/5.0066139). |
内容記述 |
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内容記述タイプ |
Abstract |
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内容記述 |
A vertical GaN p^+-n junction diode with an ideal breakdown voltage was grown by halide vapor phase epitaxy (HVPE). A steep p^+-n interface was observed even with the use of the HVPE method. No Si-accumulating layer was formed at the p^+-n interface because of the continuous HVPE growth from the n-type drift layer to the p-type layer. This method provides improved electrical properties compared with the regrowth of p-type GaN layers. The minimum ideality factor of approximately 1.6 was obtained. The breakdown voltage increased from 874 to 974 V with the increase in the temperature from 25 to 200 °C, which suggests that avalanche multiplication causes the breakdown. The temperature-dependent breakdown voltage was in good agreement with the breakdown voltage calculated using the ideal critical electric field. These results indicate that HVPE is promising for the fabrication of vertical GaN power devices. |
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言語 |
en |
出版者 |
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出版者 |
AIP Publishing |
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言語 |
en |
言語 |
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言語 |
eng |
資源タイプ |
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資源タイプ識別子 |
http://purl.org/coar/resource_type/c_6501 |
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資源タイプ |
journal article |
出版タイプ |
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出版タイプ |
VoR |
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出版タイプResource |
http://purl.org/coar/version/c_970fb48d4fbd8a85 |
関連情報 |
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関連タイプ |
isVersionOf |
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識別子タイプ |
DOI |
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関連識別子 |
https://doi.org/10.1063/5.0066139 |
収録物識別子 |
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収録物識別子タイプ |
PISSN |
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収録物識別子 |
0003-6951 |
書誌情報 |
en : Applied Physics Letters
巻 119,
号 15,
p. 152102,
発行日 2021-10-12
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ファイル公開日 |
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日付 |
2022-10-12 |
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日付タイプ |
Available |