{"_buckets": {"deposit": "494286d1-ec26-47c4-9794-ea936b1fb1e6"}, "_deposit": {"id": "21458", "owners": [], "pid": {"revision_id": 0, "type": "depid", "value": "21458"}, "status": "published"}, "_oai": {"id": "oai:nagoya.repo.nii.ac.jp:00021458", "sets": ["322"]}, "author_link": ["62358", "62359", "62360", "62361", "62362", "62363", "62364", "62365", "62366", "62367"], "item_10_alternative_title_19": {"attribute_name": "その他のタイトル", "attribute_value_mlt": [{"subitem_alternative_title": "Control of Schottky Barrier Height at Al/Ge Junctions by Ultrathin Layer Insertion", "subitem_alternative_title_language": "en"}]}, "item_10_biblio_info_6": {"attribute_name": "書誌情報", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2012-06-14", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "92", "bibliographicPageEnd": "58", "bibliographicPageStart": "53", "bibliographicVolumeNumber": "112", "bibliographic_titles": [{"bibliographic_title": "電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス", "bibliographic_titleLang": "ja"}]}]}, "item_10_description_4": {"attribute_name": "抄録", "attribute_value_mlt": [{"subitem_description": "Al/p-Ge(100)接合界面に意図的に極薄熱酸化GeO_2を形成し、N_2熱処理によるショットキー障壁高さおよび化学構造の変化の相関を電流-電圧(I-V)特性および硬X線光電子分光法(HAXPES)より評価した。300℃以上のN_2熱処理によりAl/GeO_2界面でGeO_2の還元が促進し、Ge価電子帯上端に金属の実効的な仕事関数が固定されるフェルミレベルピニング(FLP)現象が顕在化する。GeO_2の代わりに、N_2雰囲気中スパッタ法で極薄HfN層を導入すると、450℃の熱処理に対してもFLP緩和に有効であった。極薄膜を用いた伝導特性制御において、熱的に安定な接合界面の形成には、効果的にN導入することが重要である。", "subitem_description_language": "ja", "subitem_description_type": "Abstract"}, {"subitem_description": "The impact of thermal annealing in N_2 ambience on schottky barrier height (SBH) and chemical structures of Al/p-Ge(100) junctions with an interfacial control layer such as GeO_2 and HfN have been investigated from the current density-voltage (I-V) characteristics and hard X-ray photoemission spectroscopy (HAXPES), respectively. We found that, by N_2 annealing at temperatures over 300℃, the GeO_2 reduction in the region near the Al/GeO_2 interface is promoted and the Fermi level pinning (FLP) effect is induced significantly. Such a reduction of SBH in Al/p-Ge(100) junction with annealing was suppressed by an insertion of ultrathin HfN layer instead of GeO_2. The introduction of N atoms in the region near the Al/p-Ge(100) interface is likely to be effective to suppress the reveal of FLP effect with annealing.", "subitem_description_language": "en", "subitem_description_type": "Abstract"}]}, "item_10_identifier_60": {"attribute_name": "URI", "attribute_value_mlt": [{"subitem_identifier_type": "URI", "subitem_identifier_uri": "http://ci.nii.ac.jp/naid/110009588305/"}, {"subitem_identifier_type": "HDL", "subitem_identifier_uri": "http://hdl.handle.net/2237/23587"}]}, "item_10_publisher_32": {"attribute_name": "出版者", "attribute_value_mlt": [{"subitem_publisher": "一般社団法人電子情報通信学会", "subitem_publisher_language": "ja"}]}, "item_10_relation_43": {"attribute_name": "関連情報", "attribute_value_mlt": [{"subitem_relation_type": "isVersionOf", "subitem_relation_type_id": {"subitem_relation_type_id_text": "http://ci.nii.ac.jp/naid/110009588305/", "subitem_relation_type_select": "URI"}}]}, "item_10_rights_12": {"attribute_name": "権利", "attribute_value_mlt": [{"subitem_rights": "(c)一般社団法人電子情報通信学会 本文データは学協会の許諾に基づきCiNiiから複製したものである", "subitem_rights_language": "ja"}]}, "item_10_select_15": {"attribute_name": "著者版フラグ", "attribute_value_mlt": [{"subitem_select_item": "publisher"}]}, "item_10_source_id_7": {"attribute_name": "ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "0913-5685", "subitem_source_identifier_type": "PISSN"}]}, "item_1615787544753": {"attribute_name": "出版タイプ", "attribute_value_mlt": [{"subitem_version_resource": "http://purl.org/coar/version/c_970fb48d4fbd8a85", "subitem_version_type": "VoR"}]}, "item_access_right": {"attribute_name": "アクセス権", "attribute_value_mlt": [{"subitem_access_right": "open access", "subitem_access_right_uri": "http://purl.org/coar/access_right/c_abf2"}]}, "item_creator": {"attribute_name": "著者", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "大田, 晃生", "creatorNameLang": "ja"}], "nameIdentifiers": [{"nameIdentifier": "62358", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "松井, 真史", "creatorNameLang": "ja"}], "nameIdentifiers": [{"nameIdentifier": "62359", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "村上, 秀樹", "creatorNameLang": "ja"}], "nameIdentifiers": [{"nameIdentifier": "62360", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "東, 清一郎", "creatorNameLang": "ja"}], "nameIdentifiers": [{"nameIdentifier": "62361", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "宮崎, 誠一", "creatorNameLang": "ja"}], "nameIdentifiers": [{"nameIdentifier": "62362", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Ohta, Akio", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "62363", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Matsui, Masafumi", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "62364", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Murakami, Hideki", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "62365", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Higashi, Seiichiro", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "62366", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Miyazaki, Seiichi", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "62367", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "ファイル情報", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2018-02-21"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "110009588305.pdf", "filesize": [{"value": "718.3 kB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_note", "mimetype": "application/pdf", "size": 718300.0, "url": {"label": "110009588305.pdf", "objectType": "fulltext", "url": "https://nagoya.repo.nii.ac.jp/record/21458/files/110009588305.pdf"}, "version_id": "ca070965-85ca-4139-8100-7fec4f139be7"}]}, "item_keyword": {"attribute_name": "キーワード", "attribute_value_mlt": [{"subitem_subject": "ゲルマニウム", "subitem_subject_scheme": "Other"}, {"subitem_subject": "MISダイオード", "subitem_subject_scheme": "Other"}, {"subitem_subject": "ショットキー障壁", "subitem_subject_scheme": "Other"}, {"subitem_subject": "化学結合状態", "subitem_subject_scheme": "Other"}, {"subitem_subject": "硬X線光電子分光法", "subitem_subject_scheme": "Other"}, {"subitem_subject": "Germanium", "subitem_subject_scheme": "Other"}, {"subitem_subject": "MIS diode", "subitem_subject_scheme": "Other"}, {"subitem_subject": "Schottky Barrier Height", "subitem_subject_scheme": "Other"}, {"subitem_subject": "Chemical Bonding Features", "subitem_subject_scheme": "Other"}, {"subitem_subject": "Hard X-ray Photoemission Spectroscopy (ES)", "subitem_subject_scheme": "Other"}]}, "item_language": {"attribute_name": "言語", "attribute_value_mlt": [{"subitem_language": "jpn"}]}, "item_resource_type": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "極薄層挿入によるAl/Ge接合の伝導特性制御(ゲート絶縁薄膜,容量膜,機能膜及びメモリ技術)", "item_titles": {"attribute_name": "タイトル", "attribute_value_mlt": [{"subitem_title": "極薄層挿入によるAl/Ge接合の伝導特性制御(ゲート絶縁薄膜,容量膜,機能膜及びメモリ技術)", "subitem_title_language": "ja"}]}, "item_type_id": "10", "owner": "1", "path": ["322"], "permalink_uri": "http://hdl.handle.net/2237/23587", "pubdate": {"attribute_name": "PubDate", "attribute_value": "2016-02-24"}, "publish_date": "2016-02-24", "publish_status": "0", "recid": "21458", "relation": {}, "relation_version_is_last": true, "title": ["極薄層挿入によるAl/Ge接合の伝導特性制御(ゲート絶縁薄膜,容量膜,機能膜及びメモリ技術)"], "weko_shared_id": -1}