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{"_buckets": {"deposit": "494286d1-ec26-47c4-9794-ea936b1fb1e6"}, "_deposit": {"id": "21458", "owners": [], "pid": {"revision_id": 0, "type": "depid", "value": "21458"}, "status": "published"}, "_oai": {"id": "oai:nagoya.repo.nii.ac.jp:00021458"}, "item_10_alternative_title_19": {"attribute_name": "\u305d\u306e\u4ed6\u306e\u8a00\u8a9e\u306e\u30bf\u30a4\u30c8\u30eb", "attribute_value_mlt": [{"subitem_alternative_title": "Control of Schottky Barrier Height at Al/Ge Junctions by Ultrathin Layer Insertion"}]}, "item_10_biblio_info_6": {"attribute_name": "\u66f8\u8a8c\u60c5\u5831", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2012-06-14", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "92", "bibliographicPageEnd": "58", "bibliographicPageStart": "53", "bibliographicVolumeNumber": "112", "bibliographic_titles": [{"bibliographic_title": "\u96fb\u5b50\u60c5\u5831\u901a\u4fe1\u5b66\u4f1a\u6280\u8853\u7814\u7a76\u5831\u544a. SDM, \u30b7\u30ea\u30b3\u30f3\u6750\u6599\u30fb\u30c7\u30d0\u30a4\u30b9"}]}]}, "item_10_description_4": {"attribute_name": "\u6284\u9332", "attribute_value_mlt": [{"subitem_description": "Al/p-Ge(100)\u63a5\u5408\u754c\u9762\u306b\u610f\u56f3\u7684\u306b\u6975\u8584\u71b1\u9178\u5316GeO_2\u3092\u5f62\u6210\u3057\u3001N_2\u71b1\u51e6\u7406\u306b\u3088\u308b\u30b7\u30e7\u30c3\u30c8\u30ad\u30fc\u969c\u58c1\u9ad8\u3055\u304a\u3088\u3073\u5316\u5b66\u69cb\u9020\u306e\u5909\u5316\u306e\u76f8\u95a2\u3092\u96fb\u6d41-\u96fb\u5727(I-V)\u7279\u6027\u304a\u3088\u3073\u786cX\u7dda\u5149\u96fb\u5b50\u5206\u5149\u6cd5(HAXPES)\u3088\u308a\u8a55\u4fa1\u3057\u305f\u3002300\u2103\u4ee5\u4e0a\u306eN_2\u71b1\u51e6\u7406\u306b\u3088\u308aAl/GeO_2\u754c\u9762\u3067GeO_2\u306e\u9084\u5143\u304c\u4fc3\u9032\u3057\u3001Ge\u4fa1\u96fb\u5b50\u5e2f\u4e0a\u7aef\u306b\u91d1\u5c5e\u306e\u5b9f\u52b9\u7684\u306a\u4ed5\u4e8b\u95a2\u6570\u304c\u56fa\u5b9a\u3055\u308c\u308b\u30d5\u30a7\u30eb\u30df\u30ec\u30d9\u30eb\u30d4\u30cb\u30f3\u30b0(FLP)\u73fe\u8c61\u304c\u9855\u5728\u5316\u3059\u308b\u3002GeO_2\u306e\u4ee3\u308f\u308a\u306b\u3001N_2\u96f0\u56f2\u6c17\u4e2d\u30b9\u30d1\u30c3\u30bf\u6cd5\u3067\u6975\u8584HfN\u5c64\u3092\u5c0e\u5165\u3059\u308b\u3068\u3001450\u2103\u306e\u71b1\u51e6\u7406\u306b\u5bfe\u3057\u3066\u3082FLP\u7de9\u548c\u306b\u6709\u52b9\u3067\u3042\u3063\u305f\u3002\u6975\u8584\u819c\u3092\u7528\u3044\u305f\u4f1d\u5c0e\u7279\u6027\u5236\u5fa1\u306b\u304a\u3044\u3066\u3001\u71b1\u7684\u306b\u5b89\u5b9a\u306a\u63a5\u5408\u754c\u9762\u306e\u5f62\u6210\u306b\u306f\u3001\u52b9\u679c\u7684\u306bN\u5c0e\u5165\u3059\u308b\u3053\u3068\u304c\u91cd\u8981\u3067\u3042\u308b\u3002The impact of thermal annealing in N_2 ambience on schottky barrier height (SBH) and chemical structures of Al/p-Ge(100) junctions with an interfacial control layer such as GeO_2 and HfN have been investigated from the current density-voltage (I-V) characteristics and hard X-ray photoemission spectroscopy (HAXPES), respectively. We found that, by N_2 annealing at temperatures over 300\u2103, the GeO_2 reduction in the region near the Al/GeO_2 interface is promoted and the Fermi level pinning (FLP) effect is induced significantly. Such a reduction of SBH in Al/p-Ge(100) junction with annealing was suppressed by an insertion of ultrathin HfN layer instead of GeO_2. The introduction of N atoms in the region near the Al/p-Ge(100) interface is likely to be effective to suppress the reveal of FLP effect with annealing.", "subitem_description_type": "Abstract"}]}, "item_10_identifier_60": {"attribute_name": "URI", "attribute_value_mlt": [{"subitem_identifier_type": "URI", "subitem_identifier_uri": "http://ci.nii.ac.jp/naid/110009588305/"}, {"subitem_identifier_type": "HDL", "subitem_identifier_uri": "http://hdl.handle.net/2237/23587"}]}, "item_10_publisher_32": {"attribute_name": "\u51fa\u7248\u8005", "attribute_value_mlt": [{"subitem_publisher": "\u4e00\u822c\u793e\u56e3\u6cd5\u4eba\u96fb\u5b50\u60c5\u5831\u901a\u4fe1\u5b66\u4f1a"}]}, "item_10_rights_12": {"attribute_name": "\u6a29\u5229", "attribute_value_mlt": [{"subitem_rights": "(c)\u4e00\u822c\u793e\u56e3\u6cd5\u4eba\u96fb\u5b50\u60c5\u5831\u901a\u4fe1\u5b66\u4f1a \u672c\u6587\u30c7\u30fc\u30bf\u306f\u5b66\u5354\u4f1a\u306e\u8a31\u8afe\u306b\u57fa\u3065\u304dCiNii\u304b\u3089\u8907\u88fd\u3057\u305f\u3082\u306e\u3067\u3042\u308b"}]}, "item_10_select_15": {"attribute_name": "\u8457\u8005\u7248\u30d5\u30e9\u30b0", "attribute_value_mlt": [{"subitem_select_item": "publisher"}]}, "item_10_source_id_7": {"attribute_name": "ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "0913-5685", "subitem_source_identifier_type": "ISSN"}]}, "item_creator": {"attribute_name": "\u8457\u8005", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "\u5927\u7530, \u6643\u751f"}], "nameIdentifiers": [{"nameIdentifier": "62358", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "\u677e\u4e95, \u771f\u53f2"}], "nameIdentifiers": [{"nameIdentifier": "62359", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "\u6751\u4e0a, \u79c0\u6a39"}], "nameIdentifiers": [{"nameIdentifier": "62360", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "\u6771, \u6e05\u4e00\u90ce"}], "nameIdentifiers": [{"nameIdentifier": "62361", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "\u5bae\u5d0e, \u8aa0\u4e00"}], "nameIdentifiers": [{"nameIdentifier": "62362", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Ohta, Akio"}], "nameIdentifiers": [{"nameIdentifier": "62363", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Matsui, Masafumi"}], "nameIdentifiers": [{"nameIdentifier": "62364", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Murakami, Hideki"}], "nameIdentifiers": [{"nameIdentifier": "62365", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Higashi, Seiichiro"}], "nameIdentifiers": [{"nameIdentifier": "62366", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Miyazaki, Seiichi"}], "nameIdentifiers": [{"nameIdentifier": "62367", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "\u30d5\u30a1\u30a4\u30eb\u60c5\u5831", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2018-02-21"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "110009588305.pdf", "filesize": [{"value": "718.3 kB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_free", "mimetype": "application/pdf", "size": 718300.0, "url": {"label": "110009588305.pdf", "url": "https://nagoya.repo.nii.ac.jp/record/21458/files/110009588305.pdf"}, "version_id": "ca070965-85ca-4139-8100-7fec4f139be7"}]}, "item_keyword": {"attribute_name": "\u30ad\u30fc\u30ef\u30fc\u30c9", "attribute_value_mlt": [{"subitem_subject": "\u30b2\u30eb\u30de\u30cb\u30a6\u30e0", "subitem_subject_scheme": "Other"}, {"subitem_subject": "MIS\u30c0\u30a4\u30aa\u30fc\u30c9", "subitem_subject_scheme": "Other"}, {"subitem_subject": "\u30b7\u30e7\u30c3\u30c8\u30ad\u30fc\u969c\u58c1", "subitem_subject_scheme": "Other"}, {"subitem_subject": "\u5316\u5b66\u7d50\u5408\u72b6\u614b", "subitem_subject_scheme": "Other"}, {"subitem_subject": "\u786cX\u7dda\u5149\u96fb\u5b50\u5206\u5149\u6cd5", "subitem_subject_scheme": "Other"}, {"subitem_subject": "Germanium", "subitem_subject_scheme": "Other"}, {"subitem_subject": "MIS diode", "subitem_subject_scheme": "Other"}, {"subitem_subject": "Schottky Barrier Height", "subitem_subject_scheme": "Other"}, {"subitem_subject": "Chemical Bonding Features", "subitem_subject_scheme": "Other"}, {"subitem_subject": "Hard X-ray Photoemission Spectroscopy (ES)", "subitem_subject_scheme": "Other"}]}, "item_language": {"attribute_name": "\u8a00\u8a9e", "attribute_value_mlt": [{"subitem_language": "jpn"}]}, "item_resource_type": {"attribute_name": "\u8cc7\u6e90\u30bf\u30a4\u30d7", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "\u6975\u8584\u5c64\u633f\u5165\u306b\u3088\u308bAl/Ge\u63a5\u5408\u306e\u4f1d\u5c0e\u7279\u6027\u5236\u5fa1(\u30b2\u30fc\u30c8\u7d76\u7e01\u8584\u819c,\u5bb9\u91cf\u819c,\u6a5f\u80fd\u819c\u53ca\u3073\u30e1\u30e2\u30ea\u6280\u8853)", "item_titles": {"attribute_name": "\u30bf\u30a4\u30c8\u30eb", "attribute_value_mlt": [{"subitem_title": "\u6975\u8584\u5c64\u633f\u5165\u306b\u3088\u308bAl/Ge\u63a5\u5408\u306e\u4f1d\u5c0e\u7279\u6027\u5236\u5fa1(\u30b2\u30fc\u30c8\u7d76\u7e01\u8584\u819c,\u5bb9\u91cf\u819c,\u6a5f\u80fd\u819c\u53ca\u3073\u30e1\u30e2\u30ea\u6280\u8853)"}]}, "item_type_id": "10", "owner": "1", "path": ["320/321/322"], "permalink_uri": "http://hdl.handle.net/2237/23587", "pubdate": {"attribute_name": "\u516c\u958b\u65e5", "attribute_value": "2016-02-24"}, "publish_date": "2016-02-24", "publish_status": "0", "recid": "21458", "relation": {}, "relation_version_is_last": true, "title": ["\u6975\u8584\u5c64\u633f\u5165\u306b\u3088\u308bAl/Ge\u63a5\u5408\u306e\u4f1d\u5c0e\u7279\u6027\u5236\u5fa1(\u30b2\u30fc\u30c8\u7d76\u7e01\u8584\u819c,\u5bb9\u91cf\u819c,\u6a5f\u80fd\u819c\u53ca\u3073\u30e1\u30e2\u30ea\u6280\u8853)"], "weko_shared_id": null}
  1. B200 工学部/工学研究科
  2. B200a 雑誌掲載論文
  3. 学術雑誌

極薄層挿入によるAl/Ge接合の伝導特性制御(ゲート絶縁薄膜,容量膜,機能膜及びメモリ技術)

http://hdl.handle.net/2237/23587
5b339e5b-a14b-4256-8c96-0603cb87bfa8
名前 / ファイル ライセンス アクション
110009588305.pdf 110009588305.pdf (718.3 kB)
Item type 学術雑誌論文 / Journal Article(1)
公開日 2016-02-24
タイトル
タイトル 極薄層挿入によるAl/Ge接合の伝導特性制御(ゲート絶縁薄膜,容量膜,機能膜及びメモリ技術)
その他のタイトル
その他のタイトル Control of Schottky Barrier Height at Al/Ge Junctions by Ultrathin Layer Insertion
著者 大田, 晃生

× 大田, 晃生

WEKO 62358

大田, 晃生

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松井, 真史

× 松井, 真史

WEKO 62359

松井, 真史

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村上, 秀樹

× 村上, 秀樹

WEKO 62360

村上, 秀樹

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東, 清一郎

× 東, 清一郎

WEKO 62361

東, 清一郎

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宮崎, 誠一

× 宮崎, 誠一

WEKO 62362

宮崎, 誠一

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Ohta, Akio

× Ohta, Akio

WEKO 62363

Ohta, Akio

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Matsui, Masafumi

× Matsui, Masafumi

WEKO 62364

Matsui, Masafumi

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Murakami, Hideki

× Murakami, Hideki

WEKO 62365

Murakami, Hideki

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Higashi, Seiichiro

× Higashi, Seiichiro

WEKO 62366

Higashi, Seiichiro

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Miyazaki, Seiichi

× Miyazaki, Seiichi

WEKO 62367

Miyazaki, Seiichi

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権利
権利情報 (c)一般社団法人電子情報通信学会 本文データは学協会の許諾に基づきCiNiiから複製したものである
キーワード
主題Scheme Other
主題 ゲルマニウム
キーワード
主題Scheme Other
主題 MISダイオード
キーワード
主題Scheme Other
主題 ショットキー障壁
キーワード
主題Scheme Other
主題 化学結合状態
キーワード
主題Scheme Other
主題 硬X線光電子分光法
キーワード
主題Scheme Other
主題 Germanium
キーワード
主題Scheme Other
主題 MIS diode
キーワード
主題Scheme Other
主題 Schottky Barrier Height
キーワード
主題Scheme Other
主題 Chemical Bonding Features
キーワード
主題Scheme Other
主題 Hard X-ray Photoemission Spectroscopy (ES)
抄録
内容記述 Al/p-Ge(100)接合界面に意図的に極薄熱酸化GeO_2を形成し、N_2熱処理によるショットキー障壁高さおよび化学構造の変化の相関を電流-電圧(I-V)特性および硬X線光電子分光法(HAXPES)より評価した。300℃以上のN_2熱処理によりAl/GeO_2界面でGeO_2の還元が促進し、Ge価電子帯上端に金属の実効的な仕事関数が固定されるフェルミレベルピニング(FLP)現象が顕在化する。GeO_2の代わりに、N_2雰囲気中スパッタ法で極薄HfN層を導入すると、450℃の熱処理に対してもFLP緩和に有効であった。極薄膜を用いた伝導特性制御において、熱的に安定な接合界面の形成には、効果的にN導入することが重要である。The impact of thermal annealing in N_2 ambience on schottky barrier height (SBH) and chemical structures of Al/p-Ge(100) junctions with an interfacial control layer such as GeO_2 and HfN have been investigated from the current density-voltage (I-V) characteristics and hard X-ray photoemission spectroscopy (HAXPES), respectively. We found that, by N_2 annealing at temperatures over 300℃, the GeO_2 reduction in the region near the Al/GeO_2 interface is promoted and the Fermi level pinning (FLP) effect is induced significantly. Such a reduction of SBH in Al/p-Ge(100) junction with annealing was suppressed by an insertion of ultrathin HfN layer instead of GeO_2. The introduction of N atoms in the region near the Al/p-Ge(100) interface is likely to be effective to suppress the reveal of FLP effect with annealing.
内容記述タイプ Abstract
出版者
出版者 一般社団法人電子情報通信学会
言語
言語 jpn
資源タイプ
資源タイプresource http://purl.org/coar/resource_type/c_6501
タイプ journal article
ISSN
収録物識別子タイプ ISSN
収録物識別子 0913-5685
書誌情報 電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス

巻 112, 号 92, p. 53-58, 発行日 2012-06-14
著者版フラグ
値 publisher
URI
識別子 http://ci.nii.ac.jp/naid/110009588305/
識別子タイプ URI
URI
識別子 http://hdl.handle.net/2237/23587
識別子タイプ HDL
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