{"_buckets": {"deposit": "ff3ecfa3-94a5-4359-b2a2-84ca2149ae62"}, "_deposit": {"id": "21461", "owners": [], "pid": {"revision_id": 0, "type": "depid", "value": "21461"}, "status": "published"}, "_oai": {"id": "oai:nagoya.repo.nii.ac.jp:00021461", "sets": ["322"]}, "author_link": ["62384", "62385", "62386", "62387", "62388", "62389"], "item_10_alternative_title_19": {"attribute_name": "その他のタイトル", "attribute_value_mlt": [{"subitem_alternative_title": "Photoexcited Carrier Transfer in NiSi-Nanodots/Si-Quantum-Dots Hybrid Floating Gate in MOS Structures", "subitem_alternative_title_language": "en"}]}, "item_10_biblio_info_6": {"attribute_name": "書誌情報", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2012-06-14", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "92", "bibliographicPageEnd": "16", "bibliographicPageStart": "13", "bibliographicVolumeNumber": "112", "bibliographic_titles": [{"bibliographic_title": "電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス", "bibliographic_titleLang": "ja"}]}]}, "item_10_description_4": {"attribute_name": "抄録", "attribute_value_mlt": [{"subitem_description": "シリコン量子ドット(Si-QDs)とNiSiナノドット(NDs)のハイブリッド積層構造をフローティングゲート(FG)にしたMOSキャパシタにおいて,内部光電効果によるNiSi-NDsからSi-QDsへの電荷移動に着目し,近赤外光照射がハイブリッドFG内の電荷移動・再分布に及ぼす影響を調べた.容量-電圧特性において,光照射下での電子注入に起因するフラットバンド電圧シフトは,暗状態に比べて減少した.これは,NiSi-NDs内で光励起された電子がSi-QDsへ移動することによりハイブリッドFG中で負電荷中心がゲート電極側へシフトした結果として解釈できる.また,NiSi-NDs内で光励起された電子のパルスゲート電圧に対する応答を調べた結果,NiSi-NDsからSi-QDsへ移動する電荷量は,パルスゲート電圧の大きさに比例することが示唆された.", "subitem_description_language": "ja", "subitem_description_type": "Abstract"}, {"subitem_description": "We have studied electron transfer due to internal photoelectric emission in NiSi-Nanodots(NDs)/Si-Quantum-Dots(Si-QDs) hybrid FG structures induced by the irradiation of 1310 nm light. The flat-band voltage shift due to the charging of the hybrid FG was reduced by the light irradiation in comparison with that in the dark. The observed optical response can be interpreted in terms of the shift of the charge centroid in the hybrid FG caused by the photoexcitation of electrons in NiSi-NDs and their transfer to Si-QDs. The response of photoexcited electrons in the NiSi-NDs/Si-QDs hybrid FG to pulsed gate voltage was evaluated. The transferred charge is likely to increase in proportion to pulse gate voltage.", "subitem_description_language": "en", "subitem_description_type": "Abstract"}]}, "item_10_identifier_60": {"attribute_name": "URI", "attribute_value_mlt": [{"subitem_identifier_type": "URI", "subitem_identifier_uri": "http://ci.nii.ac.jp/naid/110009588297/"}, {"subitem_identifier_type": "HDL", "subitem_identifier_uri": "http://hdl.handle.net/2237/23590"}]}, "item_10_publisher_32": {"attribute_name": "出版者", "attribute_value_mlt": [{"subitem_publisher": "一般社団法人電子情報通信学会", "subitem_publisher_language": "ja"}]}, "item_10_relation_43": {"attribute_name": "関連情報", "attribute_value_mlt": [{"subitem_relation_type": "isVersionOf", "subitem_relation_type_id": {"subitem_relation_type_id_text": "http://ci.nii.ac.jp/naid/110009588297/", "subitem_relation_type_select": "URI"}}]}, "item_10_rights_12": {"attribute_name": "権利", "attribute_value_mlt": [{"subitem_rights": "(c)一般社団法人電子情報通信学会 本文データは学協会の許諾に基づきCiNiiから複製したものである", "subitem_rights_language": "ja"}]}, "item_10_select_15": {"attribute_name": "著者版フラグ", "attribute_value_mlt": [{"subitem_select_item": "publisher"}]}, "item_10_source_id_7": {"attribute_name": "ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "0913-5685", "subitem_source_identifier_type": "PISSN"}]}, "item_1615787544753": {"attribute_name": "出版タイプ", "attribute_value_mlt": [{"subitem_version_resource": "http://purl.org/coar/version/c_970fb48d4fbd8a85", "subitem_version_type": "VoR"}]}, "item_access_right": {"attribute_name": "アクセス権", "attribute_value_mlt": [{"subitem_access_right": "open access", "subitem_access_right_uri": "http://purl.org/coar/access_right/c_abf2"}]}, "item_creator": {"attribute_name": "著者", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "池田, 弥央", "creatorNameLang": "ja"}], "nameIdentifiers": [{"nameIdentifier": "62384", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "牧原, 克典", "creatorNameLang": "ja"}], "nameIdentifiers": [{"nameIdentifier": "62385", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "宮崎, 誠一", "creatorNameLang": "ja"}], "nameIdentifiers": [{"nameIdentifier": "62386", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "IKEDA, Mitsuhisa", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "62387", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "MAKIHARA, Katsunori", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "62388", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "MIYAZAKI, Seiichi", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "62389", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "ファイル情報", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2018-02-21"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "110009588297.pdf", "filesize": [{"value": "531.9 kB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_note", "mimetype": "application/pdf", "size": 531900.0, "url": {"label": "110009588297.pdf", "objectType": "fulltext", "url": "https://nagoya.repo.nii.ac.jp/record/21461/files/110009588297.pdf"}, "version_id": "d8852749-01f9-4747-aa18-5f79e6d1aba3"}]}, "item_keyword": {"attribute_name": "キーワード", "attribute_value_mlt": [{"subitem_subject": "シリコン量子ドット", "subitem_subject_scheme": "Other"}, {"subitem_subject": "シリサイドナノドット", "subitem_subject_scheme": "Other"}, {"subitem_subject": "フローティングゲート", "subitem_subject_scheme": "Other"}, {"subitem_subject": "光応答", "subitem_subject_scheme": "Other"}, {"subitem_subject": "Silicon Quantum Dot", "subitem_subject_scheme": "Other"}, {"subitem_subject": "Silicide Nanodot", "subitem_subject_scheme": "Other"}, {"subitem_subject": "Floating Gate", "subitem_subject_scheme": "Other"}, {"subitem_subject": "Optical Response", "subitem_subject_scheme": "Other"}]}, "item_language": {"attribute_name": "言語", "attribute_value_mlt": [{"subitem_language": "jpn"}]}, "item_resource_type": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Si量子ドット/NiSiナノドットハイブリッド積層フローティングゲートMOS構造における光励起キャリア移動(ゲート絶縁薄膜,容量膜,機能膜及びメモリ技術)", "item_titles": {"attribute_name": "タイトル", "attribute_value_mlt": [{"subitem_title": "Si量子ドット/NiSiナノドットハイブリッド積層フローティングゲートMOS構造における光励起キャリア移動(ゲート絶縁薄膜,容量膜,機能膜及びメモリ技術)", "subitem_title_language": "ja"}]}, "item_type_id": "10", "owner": "1", "path": ["322"], "permalink_uri": "http://hdl.handle.net/2237/23590", "pubdate": {"attribute_name": "PubDate", "attribute_value": "2016-02-24"}, "publish_date": "2016-02-24", "publish_status": "0", "recid": "21461", "relation": {}, "relation_version_is_last": true, "title": ["Si量子ドット/NiSiナノドットハイブリッド積層フローティングゲートMOS構造における光励起キャリア移動(ゲート絶縁薄膜,容量膜,機能膜及びメモリ技術)"], "weko_shared_id": -1}