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  1. B200 工学部/工学研究科
  2. B200a 雑誌掲載論文
  3. 学術雑誌

プラズマ窒化AlNx障壁層を特つNbNトンネル接合の電気的特性改善

http://hdl.handle.net/2237/23797
eb646fa1-130b-4141-8e79-a4f626b7d0c5
名前 / ファイル ライセンス アクション
110008899831.pdf 110008899831.pdf (1.4 MB)
Item type 学術雑誌論文 / Journal Article(1)
公開日 2016-03-09
タイトル
タイトル プラズマ窒化AlNx障壁層を特つNbNトンネル接合の電気的特性改善
その他のタイトル
その他のタイトル Improvement in Electrical Characteristics of NbN tunnel Junctions With Plasma-Nitrided AlNx Barriers
著者 舩井, 辰則

× 舩井, 辰則

WEKO 63817

舩井, 辰則

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内藤, 直生人

× 内藤, 直生人

WEKO 63818

内藤, 直生人

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赤池, 宏之

× 赤池, 宏之

WEKO 63819

赤池, 宏之

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藤巻, 朗

× 藤巻, 朗

WEKO 63820

藤巻, 朗

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FUNAI, Tatsunori

× FUNAI, Tatsunori

WEKO 63821

FUNAI, Tatsunori

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NAITO, Naoto

× NAITO, Naoto

WEKO 63822

NAITO, Naoto

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AKAIKE, Hiroyuki

× AKAIKE, Hiroyuki

WEKO 63823

AKAIKE, Hiroyuki

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FUJIMAKI, Akira

× FUJIMAKI, Akira

WEKO 63824

FUJIMAKI, Akira

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権利
権利情報 (c)一般社団法人電子情報通信学会 本文データは学協会の許諾に基づきCiNiiから複製したものである
キーワード
主題Scheme Other
主題 プラズマ窒化
キーワード
主題Scheme Other
主題 AlNx
キーワード
主題Scheme Other
主題 NbN
キーワード
主題Scheme Other
主題 Plasma−Nitridation
抄録
内容記述 本誌では、プラズマ窒化AlNx障壁層を特つNbNトンネル接合における接合作製プロセス及び電気的特性改善について述べる。このNbNトンネル接合を高周波電磁波検出器に応用するためには、臨界電流密度J_c及びギャップ電圧V_gの向上が必要である。そこで本研究では、接合特性改善のため、NbNトンネル接合の上部電極堆積条件及び障壁層形成条件の検討を行った。その結果、接合上部NbN層の堆積条件の調整及び基板温度を上昇させることにより、V_gが0.6mV向上し5.0mVの接合が得られた。また、Alのプラズマ窒化時のRF電力密度を変化させることより、J_cが最大で10.2kA/cm^2の接合が得られた。 We present the fabrication process of NbN tunnel junctions with plasma-nitrided AlNx barriers and the electrical characteristics of the junctions. The application of the junctions to high frequency electromagnetic wave detectors requires increase in the critical current density J_c and the gap voltage V_g of the junctions. In this work, we examined the conditions of depositing a counter NbN layer and forming an AlNx barrier for the purpose of improving the characteristics of the junctions. As a result, the V_g was increased by 0.4 mV to 5.0 mV by adjusting the deposition conditions and by raising the substrate temperature during deposition of the counter NbN layer. On the other hand, the J_c up to 10.2 kA/cm^2 was obtained by changing the RF power density for nitriding an Al layer.
内容記述タイプ Abstract
内容記述
内容記述 (超伝導エレクトロニクス基盤技術及び一般)
内容記述タイプ Other
出版者
出版者 一般社団法人電子情報通信学会
言語
言語 jpn
資源タイプ
資源タイプresource http://purl.org/coar/resource_type/c_6501
タイプ journal article
ISSN
収録物識別子タイプ ISSN
収録物識別子 0913-5685
書誌情報 電子情報通信学会技術研究報告. SCE, 超伝導エレクトロニクス

巻 111, 号 230, p. 19-24, 発行日 2011-10
著者版フラグ
値 publisher
シリーズ
関連名称
関連名称 IEICE Technical Report;SCE2011-15
URI
識別子 http://ci.nii.ac.jp/naid/110008899831/
識別子タイプ URI
URI
識別子 http://hdl.handle.net/2237/23797
識別子タイプ HDL
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