{"_buckets": {"deposit": "a0a65e26-3b11-4695-b0de-4bb42254af00"}, "_deposit": {"id": "21649", "owners": [], "pid": {"revision_id": 0, "type": "depid", "value": "21649"}, "status": "published"}, "_oai": {"id": "oai:nagoya.repo.nii.ac.jp:00021649", "sets": ["322"]}, "author_link": ["63817", "63818", "63819", "63820", "63821", "63822", "63823", "63824"], "item_10_alternative_title_19": {"attribute_name": "その他のタイトル", "attribute_value_mlt": [{"subitem_alternative_title": "Improvement in Electrical Characteristics of NbN tunnel Junctions With Plasma-Nitrided AlNx Barriers", "subitem_alternative_title_language": "en"}]}, "item_10_biblio_info_6": {"attribute_name": "書誌情報", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2011-10", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "230", "bibliographicPageEnd": "24", "bibliographicPageStart": "19", "bibliographicVolumeNumber": "111", "bibliographic_titles": [{"bibliographic_title": "電子情報通信学会技術研究報告. SCE, 超伝導エレクトロニクス", "bibliographic_titleLang": "ja"}]}]}, "item_10_description_4": {"attribute_name": "抄録", "attribute_value_mlt": [{"subitem_description": "本誌では、プラズマ窒化AlNx障壁層を特つNbNトンネル接合における接合作製プロセス及び電気的特性改善について述べる。このNbNトンネル接合を高周波電磁波検出器に応用するためには、臨界電流密度J_c及びギャップ電圧V_gの向上が必要である。そこで本研究では、接合特性改善のため、NbNトンネル接合の上部電極堆積条件及び障壁層形成条件の検討を行った。その結果、接合上部NbN層の堆積条件の調整及び基板温度を上昇させることにより、V_gが0.6mV向上し5.0mVの接合が得られた。また、Alのプラズマ窒化時のRF電力密度を変化させることより、J_cが最大で10.2kA/cm^2の接合が得られた。", "subitem_description_language": "ja", "subitem_description_type": "Abstract"}, {"subitem_description": "We present the fabrication process of NbN tunnel junctions with plasma-nitrided AlNx barriers and the electrical characteristics of the junctions. The application of the junctions to high frequency electromagnetic wave detectors requires increase in the critical current density J_c and the gap voltage V_g of the junctions. In this work, we examined the conditions of depositing a counter NbN layer and forming an AlNx barrier for the purpose of improving the characteristics of the junctions. As a result, the V_g was increased by 0.4 mV to 5.0 mV by adjusting the deposition conditions and by raising the substrate temperature during deposition of the counter NbN layer. On the other hand, the J_c up to 10.2 kA/cm^2 was obtained by changing the RF power density for nitriding an Al layer.", "subitem_description_language": "en", "subitem_description_type": "Abstract"}]}, "item_10_description_5": {"attribute_name": "内容記述", "attribute_value_mlt": [{"subitem_description": "(超伝導エレクトロニクス基盤技術及び一般)", "subitem_description_language": "ja", "subitem_description_type": "Other"}, {"subitem_description": "IEICE Technical Report;SCE2011-15", "subitem_description_language": "en", "subitem_description_type": "Other"}]}, "item_10_identifier_60": {"attribute_name": "URI", "attribute_value_mlt": [{"subitem_identifier_type": "URI", "subitem_identifier_uri": "http://ci.nii.ac.jp/naid/110008899831/"}, {"subitem_identifier_type": "HDL", "subitem_identifier_uri": "http://hdl.handle.net/2237/23797"}]}, "item_10_publisher_32": {"attribute_name": "出版者", "attribute_value_mlt": [{"subitem_publisher": "一般社団法人電子情報通信学会", "subitem_publisher_language": "ja"}]}, "item_10_relation_40": {"attribute_name": "シリーズ", "attribute_value_mlt": [{"subitem_relation_name": [{"subitem_relation_name_text": "IEICE Technical Report;SCE2011-15"}]}]}, "item_10_relation_43": {"attribute_name": "関連情報", "attribute_value_mlt": [{"subitem_relation_type": "isVersionOf", "subitem_relation_type_id": {"subitem_relation_type_id_text": "http://ci.nii.ac.jp/naid/110008899831/", "subitem_relation_type_select": "URI"}}]}, "item_10_rights_12": {"attribute_name": "権利", "attribute_value_mlt": [{"subitem_rights": "(c)一般社団法人電子情報通信学会 本文データは学協会の許諾に基づきCiNiiから複製したものである", "subitem_rights_language": "ja"}]}, "item_10_select_15": {"attribute_name": "著者版フラグ", "attribute_value_mlt": [{"subitem_select_item": "publisher"}]}, "item_10_source_id_7": {"attribute_name": "ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "0913-5685", "subitem_source_identifier_type": "PISSN"}]}, "item_1615787544753": {"attribute_name": "出版タイプ", "attribute_value_mlt": [{"subitem_version_resource": "http://purl.org/coar/version/c_970fb48d4fbd8a85", "subitem_version_type": "VoR"}]}, "item_access_right": {"attribute_name": "アクセス権", "attribute_value_mlt": [{"subitem_access_right": "open access", "subitem_access_right_uri": "http://purl.org/coar/access_right/c_abf2"}]}, "item_creator": {"attribute_name": "著者", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "舩井, 辰則", "creatorNameLang": "ja"}], "nameIdentifiers": [{"nameIdentifier": "63817", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "内藤, 直生人", "creatorNameLang": "ja"}], "nameIdentifiers": [{"nameIdentifier": "63818", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "赤池, 宏之", "creatorNameLang": "ja"}], "nameIdentifiers": [{"nameIdentifier": "63819", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "藤巻, 朗", "creatorNameLang": "ja"}], "nameIdentifiers": [{"nameIdentifier": "63820", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "FUNAI, Tatsunori", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "63821", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "NAITO, Naoto", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "63822", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "AKAIKE, Hiroyuki", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "63823", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "FUJIMAKI, Akira", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "63824", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "ファイル情報", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2018-02-21"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "110008899831.pdf", "filesize": [{"value": "1.4 MB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_note", "mimetype": "application/pdf", "size": 1400000.0, "url": {"label": "110008899831.pdf", "objectType": "fulltext", "url": "https://nagoya.repo.nii.ac.jp/record/21649/files/110008899831.pdf"}, "version_id": "afdf0bcf-d29e-459c-9b0a-87fc3da74fc3"}]}, "item_keyword": {"attribute_name": "キーワード", "attribute_value_mlt": [{"subitem_subject": "プラズマ窒化", "subitem_subject_scheme": "Other"}, {"subitem_subject": "AlNx", "subitem_subject_scheme": "Other"}, {"subitem_subject": "NbN", "subitem_subject_scheme": "Other"}, {"subitem_subject": "Plasma−Nitridation", "subitem_subject_scheme": "Other"}]}, "item_language": {"attribute_name": "言語", "attribute_value_mlt": [{"subitem_language": "jpn"}]}, "item_resource_type": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "プラズマ窒化AlNx障壁層を特つNbNトンネル接合の電気的特性改善", "item_titles": {"attribute_name": "タイトル", "attribute_value_mlt": [{"subitem_title": "プラズマ窒化AlNx障壁層を特つNbNトンネル接合の電気的特性改善", "subitem_title_language": "ja"}]}, "item_type_id": "10", "owner": "1", "path": ["322"], "permalink_uri": "http://hdl.handle.net/2237/23797", "pubdate": {"attribute_name": "PubDate", "attribute_value": "2016-03-09"}, "publish_date": "2016-03-09", "publish_status": "0", "recid": "21649", "relation": {}, "relation_version_is_last": true, "title": ["プラズマ窒化AlNx障壁層を特つNbNトンネル接合の電気的特性改善"], "weko_shared_id": -1}