{"_buckets": {"deposit": "d239f866-b54e-408d-b362-101551413306"}, "_deposit": {"id": "23087", "owners": [], "pid": {"revision_id": 0, "type": "depid", "value": "23087"}, "status": "published"}, "_oai": {"id": "oai:nagoya.repo.nii.ac.jp:00023087"}, "item_10_biblio_info_6": {"attribute_name": "\u66f8\u8a8c\u60c5\u5831", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2016-08", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "8S2", "bibliographicPageEnd": "08PC05", "bibliographicPageStart": "08PC05", "bibliographicVolumeNumber": "55", "bibliographic_titles": [{"bibliographic_title": "Japanese Journal of Applied Physics"}]}]}, "item_10_description_4": {"attribute_name": "\u6284\u9332", "attribute_value_mlt": [{"subitem_description": "We investigated the effect of GeO2 deposition temperature (T depo) on electronic properties of Al/Al2O3/GeO2/Ge MOS capacitors. Capacitance\u2013voltage characteristics show frequency dispersions under depletion and strong inversion conditions, which can be attributed from the interface states at the atomic layer deposition (ALD)-GeO2/Ge interface and from the defect states in the quasi-neutral region in the Ge substrate, respectively. We found that the interface state density (D it) shows similar values and energy distributions as T depo decreases to 200 from 300 \u00b0C, while a higher D it is observed at a T depo of 150 \u00b0C. Also, from the temperature dependence of conductance, the frequency dispersion under the strong inversion condition can be related to the minority carrier diffusion to the quasi-neutral region of the Ge substrate. The frequency dependence of conductance reveals that the undesirable increment of the bulk defect density can be suppressed by decreasing T depo. In this study, the bulk defect density in a MOS capacitor prepared at a T depo of 200 \u00b0C decreases one tenth compared with that at a T depo of 300 \u00b0C. The ALD of GeO2 at a low temperature of around 200 \u00b0C is effective for both obtaining a low D it and preventing the undesirable introduction of bulk defect density.", "subitem_description_type": "Abstract"}]}, "item_10_identifier_60": {"attribute_name": "URI", "attribute_value_mlt": [{"subitem_identifier_type": "DOI", "subitem_identifier_uri": "http://dx.doi.org/10.7567/JJAP.55.08PC05"}, {"subitem_identifier_type": "HDL", "subitem_identifier_uri": "http://hdl.handle.net/2237/25277"}]}, "item_10_publisher_32": {"attribute_name": "\u51fa\u7248\u8005", "attribute_value_mlt": [{"subitem_publisher": "IOP publishing"}]}, "item_10_rights_12": {"attribute_name": "\u6a29\u5229", "attribute_value_mlt": [{"subitem_rights": "\u00a9 2016 The Japan Society of Applied Physics"}]}, "item_10_select_15": {"attribute_name": "\u8457\u8005\u7248\u30d5\u30e9\u30b0", "attribute_value_mlt": [{"subitem_select_item": "author"}]}, "item_10_source_id_7": {"attribute_name": "ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "0021-4922", "subitem_source_identifier_type": "ISSN"}]}, "item_creator": {"attribute_name": "\u8457\u8005", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Kanematsu, Masayuki"}], "nameIdentifiers": [{"nameIdentifier": "68418", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Shibayama, Shigehisa"}], "nameIdentifiers": [{"nameIdentifier": "68419", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Sakashita, Mitsuo"}], "nameIdentifiers": [{"nameIdentifier": "68420", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Takeuchi, Wakana"}], "nameIdentifiers": [{"nameIdentifier": "68421", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Nakatsuka, Osamu"}], "nameIdentifiers": [{"nameIdentifier": "68422", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Zaima, Shigeaki"}], "nameIdentifiers": [{"nameIdentifier": "68423", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "\u30d5\u30a1\u30a4\u30eb\u60c5\u5831", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2017-08-01"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "JJAP_Kanematsu_DT15020.pdf", "filesize": [{"value": "556.8 kB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_free", "mimetype": "application/pdf", "size": 556800.0, "url": {"label": "JJAP_Kanematsu_DT15020.pdf \u30d5\u30a1\u30a4\u30eb\u516c\u958b\uff1a2017/08/01", "url": "https://nagoya.repo.nii.ac.jp/record/23087/files/JJAP_Kanematsu_DT15020.pdf"}, "version_id": "1d455b0a-292b-4cc6-be89-1b179bc97180"}]}, "item_language": {"attribute_name": "\u8a00\u8a9e", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "\u8cc7\u6e90\u30bf\u30a4\u30d7", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Effect of GeO2 deposition temperature in atomic layer deposition on electrical properties of Ge gate stack", "item_titles": {"attribute_name": "\u30bf\u30a4\u30c8\u30eb", "attribute_value_mlt": [{"subitem_title": "Effect of GeO2 deposition temperature in atomic layer deposition on electrical properties of Ge gate stack"}]}, "item_type_id": "10", "owner": "1", "path": ["320/321/322"], "permalink_uri": "http://hdl.handle.net/2237/25277", "pubdate": {"attribute_name": "\u516c\u958b\u65e5", "attribute_name_i18n": "\u516c\u958b\u65e5", "attribute_value": "2016-12-21"}, "publish_date": "2016-12-21", "publish_status": "0", "recid": "23087", "relation": {}, "relation_version_is_last": true, "title": ["Effect of GeO2 deposition temperature in atomic layer deposition on electrical properties of Ge gate stack"], "weko_shared_id": null}