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Effect of GeO2 deposition temperature in atomic layer deposition on electrical properties of Ge gate stack
http://hdl.handle.net/2237/25277
http://hdl.handle.net/2237/252778e9e0e11-95de-4497-a90b-8b18153d1757
名前 / ファイル | ライセンス | アクション |
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2016-12-21 | |||||
タイトル | ||||||
タイトル | Effect of GeO2 deposition temperature in atomic layer deposition on electrical properties of Ge gate stack | |||||
言語 | en | |||||
著者 |
Kanematsu, Masayuki
× Kanematsu, Masayuki× Shibayama, Shigehisa× Sakashita, Mitsuo× Takeuchi, Wakana× Nakatsuka, Osamu× Zaima, Shigeaki |
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アクセス権 | ||||||
アクセス権 | open access | |||||
アクセス権URI | http://purl.org/coar/access_right/c_abf2 | |||||
権利 | ||||||
言語 | en | |||||
権利情報 | © 2016 The Japan Society of Applied Physics | |||||
抄録 | ||||||
内容記述 | We investigated the effect of GeO2 deposition temperature (T depo) on electronic properties of Al/Al2O3/GeO2/Ge MOS capacitors. Capacitance–voltage characteristics show frequency dispersions under depletion and strong inversion conditions, which can be attributed from the interface states at the atomic layer deposition (ALD)-GeO2/Ge interface and from the defect states in the quasi-neutral region in the Ge substrate, respectively. We found that the interface state density (D it) shows similar values and energy distributions as T depo decreases to 200 from 300 °C, while a higher D it is observed at a T depo of 150 °C. Also, from the temperature dependence of conductance, the frequency dispersion under the strong inversion condition can be related to the minority carrier diffusion to the quasi-neutral region of the Ge substrate. The frequency dependence of conductance reveals that the undesirable increment of the bulk defect density can be suppressed by decreasing T depo. In this study, the bulk defect density in a MOS capacitor prepared at a T depo of 200 °C decreases one tenth compared with that at a T depo of 300 °C. The ALD of GeO2 at a low temperature of around 200 °C is effective for both obtaining a low D it and preventing the undesirable introduction of bulk defect density. | |||||
言語 | en | |||||
内容記述タイプ | Abstract | |||||
出版者 | ||||||
言語 | en | |||||
出版者 | IOP publishing | |||||
言語 | ||||||
言語 | eng | |||||
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資源タイプresource | http://purl.org/coar/resource_type/c_6501 | |||||
タイプ | journal article | |||||
出版タイプ | ||||||
出版タイプ | AM | |||||
出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||
DOI | ||||||
関連タイプ | isVersionOf | |||||
識別子タイプ | DOI | |||||
関連識別子 | https://doi.org/10.7567/JJAP.55.08PC05 | |||||
ISSN | ||||||
収録物識別子タイプ | PISSN | |||||
収録物識別子 | 0021-4922 | |||||
書誌情報 |
en : Japanese Journal of Applied Physics 巻 55, 号 8S2, p. 08PC05-08PC05, 発行日 2016-08 |
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著者版フラグ | ||||||
値 | author | |||||
URI | ||||||
識別子 | http://dx.doi.org/10.7567/JJAP.55.08PC05 | |||||
識別子タイプ | DOI | |||||
URI | ||||||
識別子 | http://hdl.handle.net/2237/25277 | |||||
識別子タイプ | HDL |