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  1. B200 工学部/工学研究科
  2. B200a 雑誌掲載論文
  3. 学術雑誌

Effect of GeO2 deposition temperature in atomic layer deposition on electrical properties of Ge gate stack

http://hdl.handle.net/2237/25277
http://hdl.handle.net/2237/25277
8e9e0e11-95de-4497-a90b-8b18153d1757
名前 / ファイル ライセンス アクション
JJAP_Kanematsu_DT15020.pdf JJAP_Kanematsu_DT15020.pdf ファイル公開:2017/08/01 (556.8 kB)
Item type 学術雑誌論文 / Journal Article(1)
公開日 2016-12-21
タイトル
タイトル Effect of GeO2 deposition temperature in atomic layer deposition on electrical properties of Ge gate stack
言語 en
著者 Kanematsu, Masayuki

× Kanematsu, Masayuki

WEKO 68418

en Kanematsu, Masayuki

Search repository
Shibayama, Shigehisa

× Shibayama, Shigehisa

WEKO 68419

en Shibayama, Shigehisa

Search repository
Sakashita, Mitsuo

× Sakashita, Mitsuo

WEKO 68420

en Sakashita, Mitsuo

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Takeuchi, Wakana

× Takeuchi, Wakana

WEKO 68421

en Takeuchi, Wakana

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Nakatsuka, Osamu

× Nakatsuka, Osamu

WEKO 68422

en Nakatsuka, Osamu

Search repository
Zaima, Shigeaki

× Zaima, Shigeaki

WEKO 68423

en Zaima, Shigeaki

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アクセス権
アクセス権 open access
アクセス権URI http://purl.org/coar/access_right/c_abf2
権利
言語 en
権利情報 © 2016 The Japan Society of Applied Physics
抄録
内容記述 We investigated the effect of GeO2 deposition temperature (T depo) on electronic properties of Al/Al2O3/GeO2/Ge MOS capacitors. Capacitance–voltage characteristics show frequency dispersions under depletion and strong inversion conditions, which can be attributed from the interface states at the atomic layer deposition (ALD)-GeO2/Ge interface and from the defect states in the quasi-neutral region in the Ge substrate, respectively. We found that the interface state density (D it) shows similar values and energy distributions as T depo decreases to 200 from 300 °C, while a higher D it is observed at a T depo of 150 °C. Also, from the temperature dependence of conductance, the frequency dispersion under the strong inversion condition can be related to the minority carrier diffusion to the quasi-neutral region of the Ge substrate. The frequency dependence of conductance reveals that the undesirable increment of the bulk defect density can be suppressed by decreasing T depo. In this study, the bulk defect density in a MOS capacitor prepared at a T depo of 200 °C decreases one tenth compared with that at a T depo of 300 °C. The ALD of GeO2 at a low temperature of around 200 °C is effective for both obtaining a low D it and preventing the undesirable introduction of bulk defect density.
言語 en
内容記述タイプ Abstract
出版者
言語 en
出版者 IOP publishing
言語
言語 eng
資源タイプ
資源タイプresource http://purl.org/coar/resource_type/c_6501
タイプ journal article
出版タイプ
出版タイプ AM
出版タイプResource http://purl.org/coar/version/c_ab4af688f83e57aa
DOI
関連タイプ isVersionOf
識別子タイプ DOI
関連識別子 https://doi.org/10.7567/JJAP.55.08PC05
ISSN
収録物識別子タイプ PISSN
収録物識別子 0021-4922
書誌情報 en : Japanese Journal of Applied Physics

巻 55, 号 8S2, p. 08PC05-08PC05, 発行日 2016-08
著者版フラグ
値 author
URI
識別子 http://dx.doi.org/10.7567/JJAP.55.08PC05
識別子タイプ DOI
URI
識別子 http://hdl.handle.net/2237/25277
識別子タイプ HDL
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