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  1. B200 工学部/工学研究科
  2. B200a 雑誌掲載論文
  3. 学術雑誌

Synthesis of Freestanding Graphene on SiC by a Rapid-Cooling Technique

http://hdl.handle.net/2237/25583
http://hdl.handle.net/2237/25583
1ec33def-468c-4923-992b-f288a9900410
名前 / ファイル ライセンス アクション
PhysRevLett_117_205501.pdf PhysRevLett_117_205501.pdf (1.0 MB)
Item type 学術雑誌論文 / Journal Article(1)
公開日 2017-02-16
タイトル
タイトル Synthesis of Freestanding Graphene on SiC by a Rapid-Cooling Technique
言語 en
著者 Bao, Jianfeng

× Bao, Jianfeng

WEKO 69357

en Bao, Jianfeng

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Norimatsu, Wataru

× Norimatsu, Wataru

WEKO 69358

en Norimatsu, Wataru

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Iwata, Hiroshi

× Iwata, Hiroshi

WEKO 69359

en Iwata, Hiroshi

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Matsuda, Keita

× Matsuda, Keita

WEKO 69360

en Matsuda, Keita

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Ito, Takahiro

× Ito, Takahiro

WEKO 69361

en Ito, Takahiro

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Kusunoki, Michiko

× Kusunoki, Michiko

WEKO 69362

en Kusunoki, Michiko

Search repository
アクセス権
アクセス権 open access
アクセス権URI http://purl.org/coar/access_right/c_abf2
権利
言語 en
権利情報 © 2016 American Physical Society
抄録
内容記述 Graphene has a negative thermal expansion coefficient; that is, when heated, the graphene lattice shrinks. On the other hand, the substrates typically used for graphene growth, such as silicon carbide, have a positive thermal expansion coefficient. Hence, on cooling graphene on SiC, graphene expands but SiC shrinks. This mismatch will physically break the atomic bonds between graphene and SiC. We have demonstrated that a graphenelike buffer layer on SiC can be converted to a quasifreestanding monolayer graphene by a rapid-cooling treatment. The decoupling of graphene from the SiC substrate was actually effective for reducing the electric carrier scattering due to interfacial phonons. In addition, the rapidly cooled graphene obtained in this way was of high-quality, strain-free, thermally stable, and strongly hole doped. This simple, classical, but quite novel technique for obtaining quasifreestanding graphene could open a new path towards a viable graphene-based semiconductor industry.
言語 en
内容記述タイプ Abstract
出版者
言語 en
出版者 American Physical Society
言語
言語 eng
資源タイプ
資源タイプresource http://purl.org/coar/resource_type/c_6501
タイプ journal article
出版タイプ
出版タイプ VoR
出版タイプResource http://purl.org/coar/version/c_970fb48d4fbd8a85
DOI
関連タイプ isVersionOf
識別子タイプ DOI
関連識別子 https://doi.org/10.1103/PhysRevLett.117.205501
ISSN
収録物識別子タイプ PISSN
収録物識別子 0031-9007
書誌情報 en : Physical Review Letters

巻 117, p. 205501-205501, 発行日 2016-11-08
著者版フラグ
値 publisher
URI
識別子 https://doi.org/10.1103/PhysRevLett.117.205501
識別子タイプ DOI
URI
識別子 http://hdl.handle.net/2237/25583
識別子タイプ HDL
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