ログイン
言語:

WEKO3

  • トップ
  • コミュニティ
  • ランキング
AND
To
lat lon distance
To

Field does not validate



インデックスリンク

インデックスツリー

メールアドレスを入力してください。

WEKO

One fine body…

WEKO

One fine body…

アイテム

{"_buckets": {"deposit": "cc001d83-2372-4f87-988e-3a64771f4943"}, "_deposit": {"id": "23389", "owners": [], "pid": {"revision_id": 0, "type": "depid", "value": "23389"}, "status": "published"}, "_oai": {"id": "oai:nagoya.repo.nii.ac.jp:00023389"}, "item_10_biblio_info_6": {"attribute_name": "\u66f8\u8a8c\u60c5\u5831", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2016-11-08", "bibliographicIssueDateType": "Issued"}, "bibliographicPageEnd": "205501", "bibliographicPageStart": "205501", "bibliographicVolumeNumber": "117", "bibliographic_titles": [{"bibliographic_title": "Physical Review Letters"}]}]}, "item_10_description_4": {"attribute_name": "\u6284\u9332", "attribute_value_mlt": [{"subitem_description": "Graphene has a negative thermal expansion coefficient; that is, when heated, the graphene lattice shrinks. On the other hand, the substrates typically used for graphene growth, such as silicon carbide, have a positive thermal expansion coefficient. Hence, on cooling graphene on SiC, graphene expands but SiC shrinks. This mismatch will physically break the atomic bonds between graphene and SiC. We have demonstrated that a graphenelike buffer layer on SiC can be converted to a quasifreestanding monolayer graphene by a rapid-cooling treatment. The decoupling of graphene from the SiC substrate was actually effective for reducing the electric carrier scattering due to interfacial phonons. In addition, the rapidly cooled graphene obtained in this way was of high-quality, strain-free, thermally stable, and strongly hole doped. This simple, classical, but quite novel technique for obtaining quasifreestanding graphene could open a new path towards a viable graphene-based semiconductor industry.", "subitem_description_type": "Abstract"}]}, "item_10_identifier_60": {"attribute_name": "URI", "attribute_value_mlt": [{"subitem_identifier_type": "DOI", "subitem_identifier_uri": "https://doi.org/10.1103/PhysRevLett.117.205501"}, {"subitem_identifier_type": "HDL", "subitem_identifier_uri": "http://hdl.handle.net/2237/25583"}]}, "item_10_publisher_32": {"attribute_name": "\u51fa\u7248\u8005", "attribute_value_mlt": [{"subitem_publisher": "American Physical Society"}]}, "item_10_rights_12": {"attribute_name": "\u6a29\u5229", "attribute_value_mlt": [{"subitem_rights": "\u00a9 2016 American Physical Society"}]}, "item_10_select_15": {"attribute_name": "\u8457\u8005\u7248\u30d5\u30e9\u30b0", "attribute_value_mlt": [{"subitem_select_item": "publisher"}]}, "item_10_source_id_7": {"attribute_name": "ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "0031-9007", "subitem_source_identifier_type": "ISSN"}]}, "item_creator": {"attribute_name": "\u8457\u8005", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Bao, Jianfeng"}], "nameIdentifiers": [{"nameIdentifier": "69357", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Norimatsu, Wataru"}], "nameIdentifiers": [{"nameIdentifier": "69358", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Iwata, Hiroshi"}], "nameIdentifiers": [{"nameIdentifier": "69359", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Matsuda, Keita"}], "nameIdentifiers": [{"nameIdentifier": "69360", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Ito, Takahiro"}], "nameIdentifiers": [{"nameIdentifier": "69361", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Kusunoki, Michiko"}], "nameIdentifiers": [{"nameIdentifier": "69362", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "\u30d5\u30a1\u30a4\u30eb\u60c5\u5831", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2018-02-22"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "PhysRevLett_117_205501.pdf", "filesize": [{"value": "1.0 MB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_free", "mimetype": "application/pdf", "size": 1000000.0, "url": {"label": "PhysRevLett_117_205501.pdf", "url": "https://nagoya.repo.nii.ac.jp/record/23389/files/PhysRevLett_117_205501.pdf"}, "version_id": "9541194e-ba63-4a2b-bcf7-9b7ac44382ec"}]}, "item_language": {"attribute_name": "\u8a00\u8a9e", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "\u8cc7\u6e90\u30bf\u30a4\u30d7", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Synthesis of Freestanding Graphene on SiC by a Rapid-Cooling Technique", "item_titles": {"attribute_name": "\u30bf\u30a4\u30c8\u30eb", "attribute_value_mlt": [{"subitem_title": "Synthesis of Freestanding Graphene on SiC by a Rapid-Cooling Technique"}]}, "item_type_id": "10", "owner": "1", "path": ["320/321/322"], "permalink_uri": "http://hdl.handle.net/2237/25583", "pubdate": {"attribute_name": "\u516c\u958b\u65e5", "attribute_value": "2017-02-16"}, "publish_date": "2017-02-16", "publish_status": "0", "recid": "23389", "relation": {}, "relation_version_is_last": true, "title": ["Synthesis of Freestanding Graphene on SiC by a Rapid-Cooling Technique"], "weko_shared_id": null}
  1. B200 工学部/工学研究科
  2. B200a 雑誌掲載論文
  3. 学術雑誌

Synthesis of Freestanding Graphene on SiC by a Rapid-Cooling Technique

http://hdl.handle.net/2237/25583
1ec33def-468c-4923-992b-f288a9900410
名前 / ファイル ライセンス アクション
PhysRevLett_117_205501.pdf PhysRevLett_117_205501.pdf (1.0 MB)
Item type 学術雑誌論文 / Journal Article(1)
公開日 2017-02-16
タイトル
タイトル Synthesis of Freestanding Graphene on SiC by a Rapid-Cooling Technique
著者 Bao, Jianfeng

× Bao, Jianfeng

WEKO 69357

Bao, Jianfeng

Search repository
Norimatsu, Wataru

× Norimatsu, Wataru

WEKO 69358

Norimatsu, Wataru

Search repository
Iwata, Hiroshi

× Iwata, Hiroshi

WEKO 69359

Iwata, Hiroshi

Search repository
Matsuda, Keita

× Matsuda, Keita

WEKO 69360

Matsuda, Keita

Search repository
Ito, Takahiro

× Ito, Takahiro

WEKO 69361

Ito, Takahiro

Search repository
Kusunoki, Michiko

× Kusunoki, Michiko

WEKO 69362

Kusunoki, Michiko

Search repository
権利
権利情報 © 2016 American Physical Society
抄録
内容記述 Graphene has a negative thermal expansion coefficient; that is, when heated, the graphene lattice shrinks. On the other hand, the substrates typically used for graphene growth, such as silicon carbide, have a positive thermal expansion coefficient. Hence, on cooling graphene on SiC, graphene expands but SiC shrinks. This mismatch will physically break the atomic bonds between graphene and SiC. We have demonstrated that a graphenelike buffer layer on SiC can be converted to a quasifreestanding monolayer graphene by a rapid-cooling treatment. The decoupling of graphene from the SiC substrate was actually effective for reducing the electric carrier scattering due to interfacial phonons. In addition, the rapidly cooled graphene obtained in this way was of high-quality, strain-free, thermally stable, and strongly hole doped. This simple, classical, but quite novel technique for obtaining quasifreestanding graphene could open a new path towards a viable graphene-based semiconductor industry.
内容記述タイプ Abstract
出版者
出版者 American Physical Society
言語
言語 eng
資源タイプ
資源タイプresource http://purl.org/coar/resource_type/c_6501
タイプ journal article
ISSN
収録物識別子タイプ ISSN
収録物識別子 0031-9007
書誌情報 Physical Review Letters

巻 117, p. 205501-205501, 発行日 2016-11-08
著者版フラグ
値 publisher
URI
識別子 https://doi.org/10.1103/PhysRevLett.117.205501
識別子タイプ DOI
URI
識別子 http://hdl.handle.net/2237/25583
識別子タイプ HDL
戻る
0
views
See details
Views

Versions

Ver.1 2021-03-01 14:36:21.182399
Show All versions

Share

Mendeley CiteULike Twitter Facebook Print Addthis

Cite as

Export

OAI-PMH
  • OAI-PMH JPCOAR
  • OAI-PMH DublinCore
  • OAI-PMH DDI
Other Formats
  • JSON
  • BIBTEX

Confirm


Powered by CERN Data Centre & Invenio


Powered by CERN Data Centre & Invenio