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Synthesis of Freestanding Graphene on SiC by a Rapid-Cooling Technique
http://hdl.handle.net/2237/25583
1ec33def-468c-4923-992b-f288a9900410
名前 / ファイル | ライセンス | アクション | |
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2017-02-16 | |||||
タイトル | ||||||
タイトル | Synthesis of Freestanding Graphene on SiC by a Rapid-Cooling Technique | |||||
著者 |
Bao, Jianfeng
× Bao, Jianfeng× Norimatsu, Wataru× Iwata, Hiroshi× Matsuda, Keita× Ito, Takahiro× Kusunoki, Michiko |
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権利 | ||||||
権利情報 | © 2016 American Physical Society | |||||
抄録 | ||||||
内容記述 | Graphene has a negative thermal expansion coefficient; that is, when heated, the graphene lattice shrinks. On the other hand, the substrates typically used for graphene growth, such as silicon carbide, have a positive thermal expansion coefficient. Hence, on cooling graphene on SiC, graphene expands but SiC shrinks. This mismatch will physically break the atomic bonds between graphene and SiC. We have demonstrated that a graphenelike buffer layer on SiC can be converted to a quasifreestanding monolayer graphene by a rapid-cooling treatment. The decoupling of graphene from the SiC substrate was actually effective for reducing the electric carrier scattering due to interfacial phonons. In addition, the rapidly cooled graphene obtained in this way was of high-quality, strain-free, thermally stable, and strongly hole doped. This simple, classical, but quite novel technique for obtaining quasifreestanding graphene could open a new path towards a viable graphene-based semiconductor industry. | |||||
内容記述タイプ | Abstract | |||||
出版者 | ||||||
出版者 | American Physical Society | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプresource | http://purl.org/coar/resource_type/c_6501 | |||||
タイプ | journal article | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 0031-9007 | |||||
書誌情報 |
Physical Review Letters 巻 117, p. 205501-205501, 発行日 2016-11-08 |
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著者版フラグ | ||||||
値 | publisher | |||||
URI | ||||||
識別子 | https://doi.org/10.1103/PhysRevLett.117.205501 | |||||
識別子タイプ | DOI | |||||
URI | ||||||
識別子 | http://hdl.handle.net/2237/25583 | |||||
識別子タイプ | HDL |