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  1. B200 工学部/工学研究科
  2. B200a 雑誌掲載論文
  3. 学術雑誌

Atomic layer etching of SiO2 by alternating an O2 plasma with fluorocarbon film deposition

http://hdl.handle.net/2237/26119
http://hdl.handle.net/2237/26119
dc139b89-a531-449c-845f-045de3e7658c
名前 / ファイル ライセンス アクション
1_E4971171.pdf 1_E4971171.pdf ファイル公開:2018/01/01 (905.5 kB)
Item type 学術雑誌論文 / Journal Article(1)
公開日 2017-04-21
タイトル
タイトル Atomic layer etching of SiO2 by alternating an O2 plasma with fluorocarbon film deposition
言語 en
著者 Tsutsumi, Takayoshi

× Tsutsumi, Takayoshi

WEKO 71004

en Tsutsumi, Takayoshi

Search repository
Kondo, Hiroki

× Kondo, Hiroki

WEKO 71005

en Kondo, Hiroki

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Hori, Masaru

× Hori, Masaru

WEKO 71006

en Hori, Masaru

Search repository
Zaitsu, Masaru

× Zaitsu, Masaru

WEKO 71007

en Zaitsu, Masaru

Search repository
Kobayashi, Akiko

× Kobayashi, Akiko

WEKO 71008

en Kobayashi, Akiko

Search repository
Nozawa, Toshihisa

× Nozawa, Toshihisa

WEKO 71009

en Nozawa, Toshihisa

Search repository
Kobayashi, Nobuyoshi

× Kobayashi, Nobuyoshi

WEKO 71010

en Kobayashi, Nobuyoshi

Search repository
アクセス権
アクセス権 open access
アクセス権URI http://purl.org/coar/access_right/c_abf2
権利
言語 en
権利情報 Copyright 2017 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing.The following article appeared in (Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. v.35, 2017, p.01A103) and may be found at (http://dx.doi.org/10.1116/1.4971171).
抄録
内容記述 This work demonstrated a process for the atomic-scale etching of SiO2 films, consisting of alternating nanometer-thick fluorocarbon film deposition with O2 plasma irradiation in a capacitively coupled plasma reactor. Ar plasma etching after fluorocarbon film deposition tends to suffer from nanometer- or subnanometer-thick carbon films deposited on the SiO2 surface and chamber walls. These carbon films cause various problems, such as reductions in the etching rate per cycle and degradation of the SiO2 quality. In contrast, in our two-step process, O2 plasma removes carbon atoms in such fluorocarbon films. This process therefore allows the atomic scale etching of SiO2 films without any residue or surface contamination. Additionally, since the etching rate per cycle plateaus as both the etching time and deposition time are extended, it is unnecessary to uniformly deposit a fluorocarbon film over the wafer.
言語 en
内容記述タイプ Abstract
出版者
言語 en
出版者 AIP Publishing
言語
言語 eng
資源タイプ
資源タイプresource http://purl.org/coar/resource_type/c_6501
タイプ journal article
出版タイプ
出版タイプ VoR
出版タイプResource http://purl.org/coar/version/c_970fb48d4fbd8a85
DOI
関連タイプ isVersionOf
識別子タイプ DOI
関連識別子 https://doi.org/10.1116/1.4971171
ISSN
収録物識別子タイプ PISSN
収録物識別子 0734-2101
書誌情報 en : Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

巻 35, p. 01A103-01A103, 発行日 2017-01
著者版フラグ
値 publisher
URI
識別子 http://doi.org/10.1116/1.4971171
識別子タイプ DOI
URI
識別子 http://hdl.handle.net/2237/26119
識別子タイプ HDL
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